公开(公告)号：US08134341B2

公开(公告)日：2012-03-13

申请号：US12435378

申请日：2009-05-04

Applicant: Helia Naeimi ,  Qing Ma

Inventor： Helia Naeimi ,  Qing Ma

IPC: H02J7/00

CPC classification number: H02K7/1861 ,  H02J7/32 ,  H02K7/1853 ,  H02N2/18 ,  Y02B40/90

Abstract: Embodiments of the invention relate to a mobile computing device with ambient energy harvesting capability. Embodiments of the invention, when manually operated by a user, convert the kinetic motion of a part of the user's hand, applied onto a controller of the device, to electrical energy. The energy can be used to power the device, or to charge the battery of the device. Embodiments of the invention include an electrical power storage device disposed in a housing, a display screen attached to the housing to display a plurality of user-interactive interfaces, and a manually operable input controller interactable with the interfaces and being coupled to an energy transformer in the housing to electrically charge the power storage device when operated.

Abstract translation: 本发明的实施例涉及具有环境能量收集能力的移动计算设备。 当用户手动操作时，本发明的实施例将应用于设备的控制器上的用户的一部分手的动态转换为电能。 能量可用于为设备供电，或为设备的电池充电。 本发明的实施例包括设置在壳体中的电力存储装置，附接到壳体以显示多个用户交互界面的显示屏以及与该界面相互作用并且耦合到能量变换器的可手动操作的输入控制器 所述壳体在操作时对所述蓄电装置进行充电。

公开(公告)号：US20110147059A1

公开(公告)日：2011-06-23

申请号：US12653722

申请日：2009-12-17

Applicant: Qing Ma ,  Chuan Hu ,  Patrick Morrow

Inventor： Qing Ma ,  Chuan Hu ,  Patrick Morrow

IPC: H05K1/03 ,  B05D5/12 ,  B32B37/00

CPC classification number: H01L23/49822 ,  B32B2457/08 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/3675 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05442 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15788 ,  H01L2924/16251 ,  H05K3/42 ,  H05K3/4605 ,  H05K2201/0195 ,  H05K2201/096 ,  Y10T156/10 ,  H01L2924/00

Abstract: Disclosed are embodiments of a substrate for an integrated circuit (IC) device. The substrate includes a core comprised of two or more discrete glass layers that have been bonded together. A separate bonding layer may be disposed between adjacent glass layers to couple these layers together. The substrate may also include build-up structures on opposing sides of the multi-layer glass core, or perhaps on one side of the core. Electrically conductive terminals may be formed on both sides of the substrate, and an IC die may be coupled with the terminals on one side of the substrate. The terminals on the opposing side may be coupled with a next-level component, such as a circuit board. One or more conductors extend through the multi-layer glass core, and one or more of the conductors may be electrically coupled with the build-up structures disposed over the core. Other embodiments are described and claimed.

Abstract translation: 公开了用于集成电路（IC）装置的基板的实施例。 衬底包括由已经结合在一起的两个或更多个离散的玻璃层组成的芯。 可以在相邻的玻璃层之间设置单独的粘合层，以将这些层连接在一起。 衬底还可以包括在多层玻璃芯的相对侧上或者可能在芯的一侧上的堆积结构。 导电端子可以形成在基板的两侧，并且IC管芯可以与基板的一侧上的端子耦合。 相对侧上的端子可以与诸如电路板的下一级组件耦合。 一个或多个导体延伸通过多层玻璃芯，并且一个或多个导体可以与布置在芯上的积聚结构电耦合。 描述和要求保护其他实施例。

公开(公告)号：US07952982B2

公开(公告)日：2011-05-31

申请号：US12215992

申请日：2008-06-30

Applicant: Robert Chen ,  Qing Ma ,  Valluri Rao

Inventor： Robert Chen ,  Qing Ma ,  Valluri Rao

IPC: G11B9/00

CPC classification number: G11B9/02 ,  G11B9/065

Abstract: A data storage medium includes a piezoelectric film (101) having a surface (111) including a halogen. In one embodiment, the halogen exists in an atomic concentration of at least approximately 10 percent. The result is a hydrophobic surface conducive to long-lasting scanning probe tips, low contamination, and stable surface charge. A data storage device incorporating the data storage medium includes an enclosure (205) containing the data storage medium and an adjacent scanning probe (230) wherein the enclosure has a relative humidity of at least approximately 40 percent and at least a portion of the scanning probe is coated with a layer of water.

Abstract translation: 数据存储介质包括具有包括卤素的表面（111）的压电膜（101）。 在一个实施方案中，卤素以至少约10％的原子浓度存在。 其结果是疏水性表面有利于长时间的扫描探针尖端，低污染和稳定的表面电荷。 结合数据存储介质的数据存储设备包括容纳数据存储介质的外壳（205）和相邻的扫描探针（230），其中外壳具有至少大约40％的相对湿度和扫描探针的至少一部分 涂有一层水。

公开(公告)号：US20100190267A1

公开(公告)日：2010-07-29

申请号：US12750586

申请日：2010-03-30

Applicant: Li-Peng Wang ,  Qing Ma

Inventor： Li-Peng Wang ,  Qing Ma

IPC: G01N30/00

CPC classification number: G01N30/6095 ,  B82Y15/00 ,  B82Y30/00 ,  G01N29/022 ,  G01N29/036 ,  G01N2030/025 ,  G01N2291/0224 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0423 ,  G01N2291/0426 ,  Y10T29/49117

Abstract: An apparatus, according to one aspect, may include a chromatograph and a bulk acoustic resonator. The chromatograph may include a channel that is defined at least partially in a monolithic substrate. The channel may have an inlet to receive a sample and an outlet. A chromatography material may be included in the channel. The bulk acoustic resonator may have a first electrode and a second electrode that has a chemically functionalized surface. The chemically functionalized surface may be included in a chamber that is defined at least partially in the monolithic substrate and that is coupled with the outlet of the channel. Methods of making and using such apparatus, and systems including such apparatus, are also disclosed.

Abstract translation: 根据一个方面的装置可以包括色谱仪和体声波谐振器。 色谱仪可以包括至少部分地限定在整体式衬底中的通道。 通道可以具有用于接收样品和出口的入口。 色谱材料可以包括在通道中。 体声波谐振器可以具有第一电极和具有化学官能化表面的第二电极。 化学官能化的表面可以包括在至少部分地限定在整体式衬底中并且与通道的出口耦合的室中。 还公开了制造和使用这种装置的方法，以及包括这种装置的系统。

公开(公告)号：US20100068509A1

公开(公告)日：2010-03-18

申请号：US12258220

申请日：2008-10-24

Applicant: Qing Ma ,  Nathan Franklin ,  Li-Peng Wang ,  Robert Chen

Inventor： Qing Ma ,  Nathan Franklin ,  Li-Peng Wang ,  Robert Chen

IPC: B32B9/00 ,  C23C14/34 ,  C23C16/40 ,  B05D3/10 ,  B32B5/00 ,  B05D3/02

CPC classification number: G11B9/02 ,  B82Y10/00 ,  C23C14/025 ,  C23C14/08 ,  C23C16/0272 ,  C23C16/40 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/32 ,  C30B33/02 ,  G11B9/1472 ,  G11B9/149 ,  Y10T428/265

Abstract: Provided herein are media for storing information and methods of forming such media. A strontium ruthenate (SRO) layer is provided. In certain embodiments, a titanium terminated (Ti-terminated) surface is formed on the SRO layer, and a lead zirconate titanate (PZT) layer is formed on the Ti-terminated surface. In other embodiments, a Ti-terminated surface is formed on the SRO layer, a lead titanate (PTO) layer is formed on the Ti-terminated surface, and a PZT layer is formed on the PTO layer. Preferably, the PZT layer is grown on the Ti-terminated surface, or the PTO layer, by step-flow or layer-by-layer growth, so that the resulting media has an atomically smooth surface.

Abstract translation: 这里提供了用于存储信息的介质和形成这种介质的方法。 提供锶酸锶（SRO）层。 在某些实施方案中，在SRO层上形成钛封端（Ti封端）表面，并且在Ti封端的表面上形成锆钛酸铅（PZT）层。 在其它实施方案中，在SRO层上形成Ti终止的表面，在Ti封端的表面上形成钛酸铅（PTO）层，并在PTO层上形成PZT层。 优选地，PZT层通过阶梯流或逐层生长在Ti封端的表面或PTO层上生长，使得所得介质具有原子光滑的表面。

公开(公告)号：US20090021975A1

公开(公告)日：2009-01-22

申请号：US11778571

申请日：2007-07-16

Applicant: Valluri Ramana Rao ,  Li-Peng Wang ,  Qing Ma ,  Byong Man Kim

Inventor： Valluri Ramana Rao ,  Li-Peng Wang ,  Qing Ma ,  Byong Man Kim

IPC: G11C11/12 ,  B32B15/04 ,  H01L21/62

CPC classification number: G11B9/02 ,  Y10S977/947

Abstract: A media for an information storage device comprises a substrate of single-crystal silicon, a buffer layer of an epitaxial single crystal insulator formed over the substrate, a bottom electrode layer of an epitaxial single crystal conductor formed over the buffer layer, a ferroelectric layer of an epitaxial single crystal ferroelectric material formed over the bottom electrode layer, and an overlayer of an epitaxial single crystal material formed over the ferroelectric layer. Dipole charges generally having a first orientation exist at an interface between the bottom electrode layer and the ferroelectric layer includes, while dipole charges generally having a second orientation opposite the first orientation exist at an interface between the ferroelectric layer and the overlayer includes.

Abstract translation: 用于信息存储装置的介质包括单晶硅衬底，形成在衬底上的外延单晶绝缘体的缓冲层，形成在缓冲层上的外延单晶导体的底电极层，形成在缓冲层上的铁电层 形成在底部电极层上的外延单晶铁电材料，以及形成在铁电体层上的外延单晶材料的覆层。 通常具有第一取向的偶极电荷存在于底电极层和铁电层之间的界面处，其中通常具有与第一取向相反的第二取向的偶极电荷存在于铁电层和覆层之间的界面处。

公开(公告)号：US07358579B2

公开(公告)日：2008-04-15

申请号：US10185283

申请日：2002-06-28

Applicant: Qing Ma ,  Tsung-Kuan Allen Chou ,  Valluri Rao

Inventor： Qing Ma ,  Tsung-Kuan Allen Chou ,  Valluri Rao

IPC: H01L21/00 ,  H01L29/82

CPC classification number: H01H59/0009 ,  B81B3/007 ,  B81B2201/014 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/056 ,  H01H1/20 ,  H01H2001/0084 ,  H01H2059/0036 ,  H01H2059/0063

Abstract: A microelectromechanical system switch may include a relatively stiff cantilevered beam coupled, on its free end, to a more compliant or flexible extension. A contact may be positioned at the free end of the cantilevered beam. The extension reduces the actuation voltage that is needed and compensates for the relative stiffness of the cantilevered beam in closing the switch. In opening the switch, the stiffness of the cantilevered beam may advantageously enable quicker operation which may be desirable in higher frequency situations.

Abstract translation: 微机电系统开关可以包括在其自由端上耦合到更顺从或柔性延伸部的相对刚性的悬臂梁。 触点可以位于悬臂梁的自由端。 该延伸部分减小了所需的致动电压，并补偿了关闭开关时悬臂梁的相对刚度。 在打开开关时，悬臂梁的刚度可以有利地实现更快的操作，这在更高的频率情况下是可取的。

公开(公告)号：US07332061B2

公开(公告)日：2008-02-19

申请号：US10816560

申请日：2004-03-30

Applicant: Li-Peng Wang ,  Qing Ma

Inventor： Li-Peng Wang ,  Qing Ma

IPC: C23C14/35

CPC classification number: C23C14/3471 ,  C23C14/345 ,  H01J37/32706

Abstract: A method and system for forming FBAR filters for different frequency bands with film stacks of different thicknesses, where at least some layers of different thicknesses are formed substantially at the same time, during a process operation are described herein.

Abstract translation: 本文描述了一种用于形成具有不同厚度的薄膜叠层的不同厚度的FBAR滤光器的方法和系统，其中在处理操作期间基本上同时形成至少一些不同厚度的层。

公开(公告)号：US07218188B2

公开(公告)日：2007-05-15

申请号：US11037307

申请日：2005-01-18

Applicant: Qing Ma ,  Dong S. Shim

Inventor： Qing Ma ,  Dong S. Shim

IPC: H03H9/00

CPC classification number: H03H9/0542 ,  H03H9/02779 ,  H03H9/6403

Abstract: Microelectromechanical system (MEMS) apparatus and methods for surface acoustic wave (SAW) switching are disclosed. The apparatus includes a piezoelectric substrate having spaced apart input and output SAW transducers. A MEMS switch is arranged between the input and output SAW transducers The MEMS switch has a deformable member in electromagnetic communication with one or more actuation electrodes formed on or above the substrate. The deformable member is deformable to mechanically contact the substrate to deflect or absorb a SAW generated by the input SAW transducer.

Abstract translation: 公开了用于表面声波（SAW）切换的微机电系统（MEMS）装置和方法。 该装置包括具有间隔开的输入和输出SAW换能器的压电基片。 MEMS开关布置在输入和输出SAW换能器之间MEMS开关具有与形成在基板上或上方的一个或多个致动电极电磁连通的可变形构件。 可变形构件可变形以机械地接触衬底以偏转或吸收由输入SAW换能器产生的SAW。

公开(公告)号：US20070013023A1

公开(公告)日：2007-01-18

申请号：US11525982

申请日：2006-09-22

Applicant: Qing Ma ,  Jin Lee ,  Harry Fujimoto ,  Changhong Dai ,  Shiuh-Wuu Lee ,  Travis Eiles ,  Krishna Seshan

Inventor： Qing Ma ,  Jin Lee ,  Harry Fujimoto ,  Changhong Dai ,  Shiuh-Wuu Lee ,  Travis Eiles ,  Krishna Seshan

IPC: H01L29/00

CPC classification number: H01L29/7842 ,  H01L21/76224 ,  H01L29/7846 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.

Abstract translation: 一种用于修改MOS器件的隔离结构配置以诱导或减小MOS器件的有源区上的拉伸和/或压缩应力的装置和方法。 根据本发明的隔离结构构造包括使用低模量和高模量介电材料以及拉伸应力诱导和压应力诱导介电材料，还包括改变隔离深度 用于改变隔离结构构造的结构和方法，例如使用的沟槽深度和隔离材料，以修饰（即，诱发或减少）半导体器件的有源区域上的拉伸和/或压缩应力。