公开(公告)号：US11650438B2

公开(公告)日：2023-05-16

申请号：US16529978

申请日：2019-08-02

Applicant: RAYTHEON COMPANY

Inventor： Jamal I. Mustafa ,  Justin Gordon Adams Wehner ,  Christopher R. Koontz

IPC: G02F1/017

CPC classification number: G02F1/017 ,  G02F2203/11 ,  G02F2203/52

Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

公开(公告)号：US20220163397A1

公开(公告)日：2022-05-26

申请号：US16953438

申请日：2020-11-20

Applicant: Raytheon Company

Inventor： David R. Rhiger ,  Edward P. Smith ,  Jamal I. Mustafa

IPC: G01J5/08

Abstract: A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.

公开(公告)号：US20210033893A1

公开(公告)日：2021-02-04

申请号：US16529978

申请日：2019-08-02

Applicant: RAYTHEON COMPANY

Inventor： Jamal I. Mustafa ,  Justin Gordon Adams Wehner ,  Christopher R. Koontz

IPC: G02F1/017

Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.