公开(公告)号：US11953765B2

公开(公告)日：2024-04-09

申请号：US18298097

申请日：2023-04-10

Applicant: Raytheon Company

Inventor： Jamal I. Mustafa ,  Justin Gordon Adams Wehner ,  Christopher R. Koontz

IPC: G02F1/017

CPC classification number: G02F1/017 ,  G02F2203/11 ,  G02F2203/52

Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

公开(公告)号：US11757050B2

公开(公告)日：2023-09-12

申请号：US16950618

申请日：2020-11-17

Applicant: Raytheon Company

Inventor： Jamal I. Mustafa

IPC: H01L31/0216 ,  G01J1/04 ,  H01L27/144 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18 ,  G02B5/00 ,  G02B5/18 ,  G01J1/44

CPC classification number: H01L31/02164 ,  G01J1/0407 ,  G02B5/008 ,  G02B5/1866 ,  H01L27/1446 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/1844 ,  G01J1/44 ,  G01J2001/446

Abstract: A system includes a substrate. The system also includes a detector array disposed over the substrate, where the detector array includes multiple detector pixels. The system further includes multiple plasmonic gratings disposed over top surfaces of the detector pixels, where each plasmonic grating includes multiple convex polyhedrons separated by valleys. Each detector pixel may have a mesa shape, and the convex polyhedrons of the plasmonic gratings may have a smaller size than the mesa shape of the detector pixels. A dimension across a base of each convex polyhedron of the plasmonic gratings may be selected based on a desired resonance wavelength of the plasmonic gratings.

公开(公告)号：US20240255782A1

公开(公告)日：2024-08-01

申请号：US18601291

申请日：2024-03-11

Applicant: Raytheon Company

Inventor： Jamal I. Mustafa ,  Justin Gordon Adams Wehner ,  Christopher R. Koontz

IPC: G02F1/017

CPC classification number: G02F1/017 ,  G02F2203/11 ,  G02F2203/52

Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

公开(公告)号：US20220157881A1

公开(公告)日：2022-05-19

申请号：US16952783

申请日：2020-11-19

Applicant: RAYTHEON COMPANY

Inventor： Jamal I. Mustafa ,  Robert C. Anderson ,  John L. Vampola ,  Sean P. Kilcoyne ,  Eric R. Miller ,  George Grama

IPC: H01L27/146

Abstract: A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.

公开(公告)号：US20230244096A1

公开(公告)日：2023-08-03

申请号：US18298097

申请日：2023-04-10

Applicant: Raytheon Company

Inventor： Jamal I. Mustafa ,  Justin Gordon Adams Wehner ,  Christopher R. Koontz

IPC: G02F1/017

CPC classification number: G02F1/017 ,  G02F2203/11 ,  G02F2203/52

Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.

公开(公告)号：US20220158002A1

公开(公告)日：2022-05-19

申请号：US16950618

申请日：2020-11-17

Applicant: Raytheon Company

Inventor： Jamal I. Mustafa

IPC: H01L31/0216 ,  G01J1/04 ,  H01L27/144 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18 ,  G02B5/00 ,  G02B5/18

Abstract: A system includes a substrate. The system also includes a detector array disposed over the substrate, where the detector array includes multiple detector pixels. The system further includes multiple plasmonic gratings disposed over top surfaces of the detector pixels, where each plasmonic grating includes multiple convex polyhedrons separated by valleys. Each detector pixel may have a mesa shape, and the convex polyhedrons of the plasmonic gratings may have a smaller size than the mesa shape of the detector pixels. A dimension across a base of each convex polyhedron of the plasmonic gratings may be selected based on a desired resonance wavelength of the plasmonic gratings.

公开(公告)号：US11710756B2

公开(公告)日：2023-07-25

申请号：US16952783

申请日：2020-11-19

Applicant: RAYTHEON COMPANY

Inventor： Jamal I. Mustafa ,  Robert C. Anderson ,  John L. Vampola ,  Sean P. Kilcoyne ,  Eric R. Miller ,  George Grama

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/1469 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1462

Abstract: A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.

公开(公告)号：US11598673B2

公开(公告)日：2023-03-07

申请号：US16953438

申请日：2020-11-20

Applicant: Raytheon Company

Inventor： David R. Rhiger ,  Edward P. Smith ,  Jamal I. Mustafa

IPC: G01J5/08 ,  G01J5/20 ,  H01L31/101 ,  H01L31/0304 ,  H01L31/0352

Abstract: A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.

公开(公告)号：US20230032232A1

公开(公告)日：2023-02-02

申请号：US17390872

申请日：2021-07-31

Applicant: Raytheon Company

Inventor： Jamal I. Mustafa ,  Richard J. Peralta

IPC: H01L27/146 ,  H04N17/00

Abstract: An optical device and method of forming the optical device include a substrate having an integrated metal pattern proximate a detector or top absorber layer to minimize diffraction effects. The integrated metal pattern is aligned with selective regions of the pixel array structure of the detector layer for masking pixels of the pixel array structure. The pattern of the integrated metal pattern may be used for alignment with modulation transfer function (MTF) structures of the detector layer for MTF testing, for alignment with reference pixels of the detector layer for spatial reference used during calibration of the optical device, or for forming a polarizer grid.

公开(公告)号：US12288795B2

公开(公告)日：2025-04-29

申请号：US17390872

申请日：2021-07-31

Applicant: Raytheon Company

Inventor： Jamal I. Mustafa ,  Richard J. Peralta

IPC: H01L27/146 ,  G01M11/02 ,  H04N17/00

Abstract: An optical device and method of forming the optical device include a substrate having an integrated metal pattern proximate a detector or top absorber layer to minimize diffraction effects. The integrated metal pattern is aligned with selective regions of the pixel array structure of the detector layer for masking pixels of the pixel array structure. The pattern of the integrated metal pattern may be used for alignment with modulation transfer function (MTF) structures of the detector layer for MTF testing, for alignment with reference pixels of the detector layer for spatial reference used during calibration of the optical device, or for forming a polarizer grid.