Abstract:
An integrated circuit may be coupled to a printed circuit board through a split socket. The integrated circuit may be packaged with a package substrate electrically coupled to a socket which, in turn, is electrically coupled to a printed circuit board. Between the printed circuit board and the package substrate, on the same side as the package substrate as the socket, may be positioned a flexible substrate. The flexible substrate may include a flexible sheet-like member made of a polymer, in one embodiment, and a plurality of microscale springs which electrically couple said flexible substrate to the package substrate.
Abstract:
Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A diamond island can form part of the thermal solution for an integrated circuit formed on the substrate, and the diamond island can also provide part of a stress engineering solution to improve performance of the integrated circuit. Other embodiments are described and claimed.
Abstract:
An integrated circuit may be coupled to a printed circuit board through a split socket. The integrated circuit may be packaged with a package substrate electrically coupled to a socket which, in turn, is electrically coupled to a printed circuit board. Between the printed circuit board and the package substrate, on the same side as the package substrate as the socket, may be positioned a flexible substrate. The flexible substrate may include a flexible sheet-like member made of a polymer, in one embodiment, and a plurality of microscale springs which electrically couple said flexible substrate to the package substrate.
Abstract:
Methods of forming passive elements under a device layer are described. Those methods and structures may include forming at least one passive structure, such as a capacitor and a resistor structure, in a substrate, wherein the passive structures are vertically disposed within the substrate. An insulator layer is formed on a top surface of the passive structure, a device layer is formed on the insulator layer, and a contact is formed to couple a device disposed in the device layer to the at least one passive structure.
Abstract:
A device to output a haptic effect includes a haptic effect generator comprising one or more microdroplets of a fluid configured to output a haptic effect, and a substrate configured to control movement of the one or more microdroplets of fluid. The device further includes an actuator coupled to the haptic effect generator configured to exert one or more forces on the substrate to cause the one or more microdroplets of fluid to output the haptic effect.
Abstract:
An embodiment includes an oscillator comprising an amplifier formed on a substrate; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein.
Abstract:
An integrated circuit device that comprises a single semiconductor substrate, a device layer formed on a frontside of the single semiconductor substrate, a redistribution layer formed on a backside of the single semiconductor substrate, a through silicon via (TSV) formed within the single semiconductor substrate that is electrically coupled to the device layer and to the redistribution layer, a logic-memory interface (LMI) formed on a backside of the single semiconductor substrate that is electrically coupled to the redistribution layer, and a MEMS device formed on the backside of the single semiconductor substrate that is electrically coupled to the redistribution layer.
Abstract:
A method of fabricating a microelectronic package having a direct contact heat spreader, a package formed according to the method, a die-heat spreader combination formed according to the method, and a system incorporating the package. The method comprises metallizing a backside of a microelectronic die to form a heat spreader body directly contacting and fixed to the backside of the die thus yielding a die-heat spreader combination. The package includes the die-heat spreader combination and a substrate bonded to the die.
Abstract:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a first plurality of openings through a first surface of a substrate, forming a p-type TFTEC material within the first plurality of openings, forming a second plurality of openings substantially adjacent to the first plurality of openings through the first surface of the substrate, and then forming an n-type TFTEC material within the second plurality of openings.
Abstract:
Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A diamond island can form part of the thermal solution for an integrated circuit formed on the substrate, and the diamond island can also provide part of a stress engineering solution to improve performance of the integrated circuit. Other embodiments are described and claimed.