公开(公告)号：US11158849B2

公开(公告)日：2021-10-26

申请号：US16015835

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun Lee ,  Seongjun Park ,  Hyunjae Song ,  Hyeonjin Shin ,  Ki-Bum Kim ,  Yunhho Kang ,  Sanghun Lee

IPC: H01M4/36 ,  H01M10/0525 ,  H01M4/133 ,  H01M4/587 ,  H01M4/38 ,  H01M10/0562 ,  H01M10/0585 ,  H01M10/0566 ,  H01M4/70 ,  H01M4/62 ,  H01M4/1393 ,  B82Y30/00 ,  H01M4/02 ,  H01M4/66

Abstract: Provided are lithium ion batteries including a nano-crystalline graphene electrode. The lithium ion battery includes a cathode on a cathode current collector, an electrolyte layer on the cathode, an anode on the electrolyte layer, and an anode current collector on the anode. The anode and the cathode include a plurality of grains having a size in a range from about 5 nm to about 100 nm. The cathode has a double bonded structure in which a carbon of the graphene is combined with oxygen.

公开(公告)号：US11004888B2

公开(公告)日：2021-05-11

申请号：US16692603

申请日：2019-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong Kim ,  Jaeho Lee ,  Sanghyun Jo ,  Hyeonjin Shin

IPC: H01L27/00 ,  H01L31/0216 ,  H01L27/146 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109 ,  G01J5/20

Abstract: A photoelectric conversion element and an optical sensor including the same are disclosed. The photoelectric conversion element may include a plurality of lattice stacks repeatedly stacked on top of each other on a substrate and configured to have an effective band gap. The plurality of lattice stacks may each include a first active layer and a second active layer on the first active layer. The first active layer may include a first two-dimensional material having a first band gap. The second active layer may include a second two-dimensional material having a second band gap not overlapping the first band gap. An effective band gap may be adjusted based on the first two-dimensional materials and thicknesses of the first active layer and the second active layer and a number of times of plurality of lattice stacks.

公开(公告)号：US20200350164A1

公开(公告)日：2020-11-05

申请号：US16678115

申请日：2019-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu Lee ,  Kyung-Eun Byun ,  Hyunjae Song ,  Hyeonjin Shin ,  Changhyun Kim ,  Keunwook Shin ,  Changseok Lee ,  Alum Jung

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/165

Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.

公开(公告)号：US10790230B2

公开(公告)日：2020-09-29

申请号：US16257171

申请日：2019-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US10777412B2

公开(公告)日：2020-09-15

申请号：US15874226

申请日：2018-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwook Lee ,  Sangwon Kim ,  Minsu Seol ,  Seongjun Park ,  Hyeonjin Shin ,  Yunseong Lee ,  Seongjun Jeong ,  Alum Jung

IPC: H01L21/00 ,  H01B1/00 ,  H01L21/033 ,  G03F7/11 ,  G03F7/09 ,  H01B1/04 ,  C01B32/194 ,  H01L21/311 ,  B82Y30/00 ,  B82Y40/00

Abstract: Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M—O—C bond or an M—C bond, where M is a metal element, O is oxygen, and C is carbon.

公开(公告)号：US10681464B2

公开(公告)日：2020-06-09

申请号：US16173516

申请日：2018-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon Kim ,  Hyeonjin Shin ,  Minsu Seol ,  Dongwook Lee

IPC: H04R7/06 ,  H04R15/00 ,  H04R17/00 ,  H04R19/00 ,  H04R7/12

Abstract: Provided are an acoustic diaphragm and an acoustic device including the same. The acoustic diaphragm may include graphene nanoparticles, and an average particle size of the graphene nanoparticles may be about 10 nm or less. The graphene nanoparticles substantially may have a particle size of about 1 nm to about 10 nm. The graphene nanoparticles may include at least one functional group selected from a hydroxyl group, a carboxyl group, a carbonyl group, an epoxy group, an amine group, and an amide group.

公开(公告)号：US20200091219A1

公开(公告)日：2020-03-19

申请号：US16692603

申请日：2019-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong KIM ,  Jaeho Lee ,  Sanghyun Jo ,  Hyeonjin Shin

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109

Abstract: A photoelectric conversion element and an optical sensor including the same are disclosed. The photoelectric conversion element may include a plurality of lattice stacks repeatedly stacked on top of each other on a substrate and configured to have an effective band gap. The plurality of lattice stacks may each include a first active layer and a second active layer on the first active layer. The first active layer may include a first two-dimensional material having a first band gap. The second active layer may include a second two-dimensional material having a second band gap not overlapping the first band gap. An effective band gap may be adjusted based on the first two-dimensional materials and thicknesses of the first active layer and the second active layer and a number of times of plurality of lattice stacks.

公开(公告)号：US10587207B2

公开(公告)日：2020-03-10

申请号：US15412557

申请日：2017-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum Jung ,  Hyeonjin Shin ,  Jae-Young Kim ,  Kyung-Eun Byun

IPC: H02N1/04

Abstract: Disclosed are triboelectric generators using surface plasmon resonance. A triboelectric generator includes first and second electrodes spaced apart from each other, first and second electrification layers provided on the first and second electrodes, respectively, and a light source provided to irradiate light onto the second electrification layer. Herein, the second electrification layer includes a metallic material configured to generate surface plasmon resonance due to light of a desired wavelength, and the light source irradiates the light of the desired wavelength configured to generate the surface plasmon resonance, onto the second electrification layer.

公开(公告)号：US10559660B2

公开(公告)日：2020-02-11

申请号：US16248945

申请日：2019-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/04 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L29/45 ,  H01L29/417 ,  H01L29/06 ,  H01L29/267 ,  H01L29/12 ,  H01L29/26 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US10553730B2

公开(公告)日：2020-02-04

申请号：US15603796

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung Lee ,  Jinseong Heo ,  Jaeho Lee ,  Haeryong Kim ,  Seongjun Park ,  Hyeonjin Shin ,  Eunkyu Lee ,  Sanghyun Jo

IPC: H01L31/0216 ,  G01N21/59 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.