公开(公告)号：US11670227B2

公开(公告)日：2023-06-06

申请号：US17798539

申请日：2020-07-22

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Lei Zhou ,  Min Li ,  Hongmeng Li ,  Hua Xu ,  Zikai Chen ,  Jianhua Zou ,  Lei Wang ,  Junbiao Peng ,  Hong Tao

IPC: G09G3/32

CPC classification number: G09G3/32 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/0242 ,  G09G2330/028

Abstract: Disclosed are to a pixel circuit, a method for driving the pixel circuit and a display panel. The pixel circuit includes a data write module, a storage module, a drive module and a light emitting device. The drive module includes a first control terminal and a second control terminal. The data write module is configured to write, at a data write stage, a data signal into the first control terminal of the drive module, the storage module is configured to maintain a potential of the first control terminal, the second control terminal is electrically connected to a pulse-width modulation (PWM) signal input terminal of the pixel circuit, and is configured to control the drive module to provide discontinuous drive current according to a PWM signal from the PWM signal input terminal at a light emission stage, and the light emitting device emits light in response to the discontinuous drive current.

公开(公告)号：US11545580B2

公开(公告)日：2023-01-03

申请号：US17105655

申请日：2020-11-27

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Junbiao Peng ,  Lei Wang ,  Jian Hua Zou ,  Hong Tao

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

公开(公告)号：US11186676B2

公开(公告)日：2021-11-30

申请号：US16467987

申请日：2017-11-27

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Ting Guo ,  Feng Peng ,  Lei Ying ,  Wei Yang ,  Junbiao Peng ,  Yong Cao

IPC: C08G61/12 ,  H01L51/00

Abstract: Provided are a polymer containing S,S-dioxide-dibenzothiophene in backbone chain with content-adjustable triarylamine end groups, and a preparation method and an application thereof. Triarylamines hole-transport small molecules are introduced into the polymer end group, and a content of the triarylamine end groups can be adjusted by controlling a polymer molecular weight, so that the polymer has better electron-transport and hole-transport capabilities, and charge carrier transport can be balanced, so that more exciton recombination takes place effectively, thus improving the luminous efficiency and stability of the polymer. The polymer is prepared by a Suzuki polymerization reaction and does not require synthesis of new monomers. The polymer material is used for preparing highly effective and stable monolayer devices, and is dissolved directly in an organic solvent, then spin-coated, ink-jet printed, or printed to form a film.

公开(公告)号：US10439070B2

公开(公告)日：2019-10-08

申请号：US15515004

申请日：2016-05-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Liangchen Yan ,  Guangcai Yuan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L29/786 ,  H01L29/51 ,  C23C14/18 ,  C23C14/20 ,  C23C14/58 ,  C25D11/02 ,  C25D11/04 ,  C25D11/26 ,  C25D11/34 ,  H01L21/02 ,  H01L21/443 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66 ,  C23C14/16

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.

公开(公告)号：US10204922B2

公开(公告)日：2019-02-12

申请号：US15303357

申请日：2016-01-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1335 ,  H01L27/15 ,  H01L33/00

Abstract: A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.

公开(公告)号：US12025437B2

公开(公告)日：2024-07-02

申请号：US17422693

申请日：2019-09-23

Applicant: South China University of Technology

Inventor： Linfeng Lan ,  Caihao Deng ,  Junbiao Peng

IPC: G01B7/00 ,  G01B1/00 ,  G01B7/16

CPC classification number: G01B7/18 ,  G01B1/00

Abstract: A stretchable strain sensor based on vertical graphene having a stretch ratio of more than 50% and is capable of recognizing timbre with frequency greater than f hertz, f being 100, 800 or 2500, and having a sensitivity factor greater than 100 at 50% stretch, wherein the vertical graphene comprises a bottom plane layer and a vertical layer and contains high-density reticular cracks, wherein the directions of the cracks can be transverse, vertical and oblique directions, wherein the reticular cracks divide the vertical graphene into a plurality of small blocks, and adjacent small blocks are electrically connected through the vertical layer in stretched state, the cracks widen, but still can be bridged by the vertical layer, the two sides of the cracks still remain electrically connected, the sensor remains effective, wherein average diameter range of the plane of each small block is between 5 and 20 microns.

公开(公告)号：US20230377767A1

公开(公告)日：2023-11-23

申请号：US18229669

申请日：2023-08-02

Applicant: South China University of Technology

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Jiawei Pang ,  Zikai Chen ,  Hong Tao ,  Jianhua Zou ,  Lei Wang ,  Junbiao Peng

IPC: H01B1/08 ,  H01B5/14

CPC classification number: H01B1/08 ,  H01B5/14

Abstract: Disclosed is a transparent conductive oxide thin film. The metal oxide is a transparent conductive material of (In2O3)x(MO)y(ReO)z formed by doping a small amount of a rare earth oxide ReO into an indium-containing metal oxide MO—In2O3 as a photon-generated carrier conversion center. According to the present application, in an indium-based metal oxide, a rare earth oxide material is introduced, such that the carrier concentration is controlled, and the mobility is improved; rare earth ions in the rare earth oxide have the lower electronegativity, and an ionic bond Ln-O formed by the rare earth ions and oxygen ions has the higher bond breaking energy, such that the oxygen vacancy concentration in the In2O3 thin film may be effectively controlled. The rare earth ions have the ionic radius equivalent to that of indium ions, defect scattering caused by structure mismatch may be reduced, the high mobility characteristics thereof may be kept better.

公开(公告)号：US20230075372A1

公开(公告)日：2023-03-09

申请号：US17799519

申请日：2021-02-08

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Lei Zhou ,  Hong Tao ,  Min Li ,  Hongmeng Li ,  Hua Xu ,  Zikai Chen ,  Jianhua Zou ,  Lei Wang ,  Junbiao Peng

IPC: H01L27/32 ,  H01L51/00

Abstract: Provided are a display panel and a display device. The display panel includes at least two display units. Each display unit includes a substrate, a flexible substrate, a light-emitting unit circuit layer and at least one driver chip. The rigid substrate includes a display bearing region and a splicing region located on at least one side of the display bearing region. The flexible substrate is located on a first surface of the rigid substrate and located in the display bearing region, and the flexible substrate at least partially extends out of the display bearing region of the rigid substrate. The light-emitting unit circuit layer is located on a surface of one side of the flexible substrate away from the rigid substrate and includes at least one bonding pad.

公开(公告)号：US20180337201A1

公开(公告)日：2018-11-22

申请号：US15741737

申请日：2017-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Liangchen Yan ,  Xiaoguang Xu ,  Linfeng Lan ,  Lei Wang ,  Junbiao Peng

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/28 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/06 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/7869

Abstract: The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.

公开(公告)号：US09917205B2

公开(公告)日：2018-03-13

申请号：US15123177

申请日：2015-09-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L21/02 ,  H01L29/786 ,  H01L21/34 ,  H01L29/24 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02565 ,  H01L21/34 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.