公开(公告)号：US09917157B2

公开(公告)日：2018-03-13

申请号：US15303231

申请日：2015-10-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.

公开(公告)号：US09673691B2

公开(公告)日：2017-06-06

申请号：US15030191

申请日：2013-12-23

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Qinghua Wu ,  Lei Wang

IPC: G05F1/00 ,  H02M1/00 ,  H02M3/156 ,  H02M3/157

CPC classification number: H02M1/00 ,  H02M3/156 ,  H02M3/1563 ,  H02M3/157 ,  H02M2001/0009 ,  H02M2003/1566

Abstract: An energy balance controller includes a detection unit, a calculation unit and a reset integral module; the reset integral module includes a reset integrator, a comparator and an RS flip-flop; the input terminals of the calculation unit and the reset integrator are connected to the output terminal of the detection unit, respectively; the output terminal of the calculation unit is connected to one input terminal of the comparator, and the output terminal of the reset integrator is connected to the other input terminal of the comparator; the output terminal of the comparator is connected to the reset terminal of the RS flip-flop; the Q terminal of the RS flip-flop is connected to the reset integrator, and the Q terminal of the RS flip-flop is used for controlling a switching device of the converter to switch on or off; the method is implemented by the energy balance controller.

公开(公告)号：US20170154905A1

公开(公告)日：2017-06-01

申请号：US15122155

申请日：2015-10-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/10 ,  H01L29/423 ,  H01L21/324 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786 ,  H01L21/3213

Abstract: This disclosure provides a thin film transistor and the preparation method thereof, an array substrate, and a display panel, so as to solve the problem that the active layer is prone to be corroded when a metal oxide thin film transistor is produced by a back channel etching process. The preparation method comprises: forming a gate electrode metal thin film on a base substrate, and allowing the gate electrode metal thin film to form a gate electrode metal layer comprising a gate electrode by a patterning process; forming a gate electrode insulating layer on the gate electrode metal layer; forming an active layer on the gate electrode insulating layer; preparing a metal nanoparticle layer on the active layer, said metal nanoparticle layer being used as an etching protection layer; forming a source and drain electrode metal thin film on the base substrate on which the above processes are finished, and allowing the source and drain electrode metal thin film to form a source and drain electrode metal layer comprising a source electrode and a drain electrode by a patterning process, wherein the source electrode and the drain electrode cover a part of the metal nanoparticle layer; removing or oxidizing the part of the metal nanoparticle layer which is not covered by the source electrode and the drain electrode in an oxygen-containing atmosphere; and forming a passivation layer on the source and drain electrode metal layer.

公开(公告)号：US11677031B2

公开(公告)日：2023-06-13

申请号：US16529833

申请日：2019-08-02

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Weijing Wu ,  Weifeng Chen ,  Lei Wang ,  Junbiao Peng

IPC: H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L29/78693 ,  H01L21/02266 ,  H01L21/02581 ,  H01L21/30604

Abstract: The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.

公开(公告)号：US10141340B2

公开(公告)日：2018-11-27

申请号：US15108678

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/14 ,  H01L27/15 ,  H01L27/12 ,  H01L21/28 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66

Abstract: In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.

公开(公告)号：US09806097B2

公开(公告)日：2017-10-31

申请号：US15038127

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869

Abstract: A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.

公开(公告)号：US11984510B2

公开(公告)日：2024-05-14

申请号：US16678173

申请日：2019-11-08

Applicant: South China University of Technology

Inventor： Miao Xu ,  Hua Xu ,  Weijing Wu ,  Weifeng Chen ,  Lei Wang ,  Junbiao Peng

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/247 ,  H01L29/6675

Abstract: The present application discloses a composite metal oxide semiconductor which is a metal oxide semiconductor doped with a rare earth oxide. Even doping the praseodymium oxide or ytterbium oxide at a small doping amount, oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also disclose the thin-film transistors made thereof the composite metal oxide semiconductor and its application.

公开(公告)号：US11894467B2

公开(公告)日：2024-02-06

申请号：US16678116

申请日：2019-11-08

Applicant: South China University of Technology

Inventor： Miao Xu ,  Hua Xu ,  Weijing Wu ,  Weifeng Chen ,  Lei Wang ,  Junbiao Peng

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/6675

Abstract: The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.

公开(公告)号：US11670227B2

公开(公告)日：2023-06-06

申请号：US17798539

申请日：2020-07-22

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Lei Zhou ,  Min Li ,  Hongmeng Li ,  Hua Xu ,  Zikai Chen ,  Jianhua Zou ,  Lei Wang ,  Junbiao Peng ,  Hong Tao

IPC: G09G3/32

CPC classification number: G09G3/32 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/0242 ,  G09G2330/028

Abstract: Disclosed are to a pixel circuit, a method for driving the pixel circuit and a display panel. The pixel circuit includes a data write module, a storage module, a drive module and a light emitting device. The drive module includes a first control terminal and a second control terminal. The data write module is configured to write, at a data write stage, a data signal into the first control terminal of the drive module, the storage module is configured to maintain a potential of the first control terminal, the second control terminal is electrically connected to a pulse-width modulation (PWM) signal input terminal of the pixel circuit, and is configured to control the drive module to provide discontinuous drive current according to a PWM signal from the PWM signal input terminal at a light emission stage, and the light emitting device emits light in response to the discontinuous drive current.

公开(公告)号：US11545580B2

公开(公告)日：2023-01-03

申请号：US17105655

申请日：2020-11-27

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Junbiao Peng ,  Lei Wang ,  Jian Hua Zou ,  Hong Tao

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.