Semiconductor Device and Method of Forming Shielding Material Containing Conductive Spheres

    公开(公告)号:US20240379580A1

    公开(公告)日:2024-11-14

    申请号:US18314571

    申请日:2023-05-09

    Abstract: A semiconductor device has a substrate and an electrical component disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A shielding material, containing a plurality of spheres embedded in a matrix, is formed on the encapsulant. The shielding material 144 can be formed by spray coating, printing, liquid flow, or droplets. The spheres can have a curved or angled shape, e.g., circular, oval, or many flat or curved surfaces joining as a globe. The spheres each have a shell formed over a core. The shell can be a conductive material, while the core is an insulating material. Alternatively, the shell can be an insulating material, while the core is a conductive material. The shielding material scatters electromagnetic interference noise waves by reflection off the shell of the spheres. The shielding material can absorb electromagnetic interference noise waves into the core of the spheres.

    Semiconductor Device and Method of Forming Electrical Circuit Pattern Within Encapsulant of SIP Module

    公开(公告)号:US20240162103A1

    公开(公告)日:2024-05-16

    申请号:US18422759

    申请日:2024-01-25

    CPC classification number: H01L23/31 H01L21/565 H01L23/60 H01L23/66

    Abstract: A semiconductor device has an electronic component assembly with a substrate and a plurality of electrical components disposed over the substrate. A conductive post is formed over the substrate. A molding compound sheet is disposed over the electrical component assembly. A carrier including a first electrical circuit pattern is disposed over the molding compound sheet. The carrier is pressed against the molding compound sheet to dispose a first encapsulant over and around the electrical component assembly and embed the first electrical circuit pattern in the first encapsulant. A shielding layer can be formed over the electrical components assembly. The carrier is removed to expose the first electrical circuit pattern. A second encapsulant is deposited over the first encapsulant and the first electrical circuit pattern. A second electrical circuit pattern is formed over the second encapsulant. A semiconductor package is disposed over the first electrical circuit pattern.

    Semiconductor device and method of forming a slot in EMI shielding layer using a plurality of slot lines to guide a laser

    公开(公告)号:US11640944B2

    公开(公告)日:2023-05-02

    申请号:US17307437

    申请日:2021-05-04

    Abstract: A semiconductor device has a shielding layer over a semiconductor package. A plurality of slot lines define a location to form a slot in the shielding layer. The slot is formed in the shielding layer by cutting along the slot lines with a laser controlled by a scanner to read the slot lines. The slot lines include a left boundary slot line and right boundary slot line. The slot can be cut in the shielding layer by performing an edge cut along the slot lines, and performing a peel back to form the slot in the shielding layer. Alternatively, the slot can be cut in the shielding layer by performing a first cut in a first direction along the slot lines, and performing a second cut in a second direction opposite the first direction along the slot lines to form the slot in the shielding layer.

    PSPI-based Patterning Method for RDL

    公开(公告)号:US20220399323A1

    公开(公告)日:2022-12-15

    申请号:US17343402

    申请日:2021-06-09

    Abstract: A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.

    Semiconductor Device and Method of Forming a Slot in EMI Shielding Layer Using a Plurality of Slot Lines to Guide a Laser

    公开(公告)号:US20220359417A1

    公开(公告)日:2022-11-10

    申请号:US17307437

    申请日:2021-05-04

    Abstract: A semiconductor device has a shielding layer over a semiconductor package. A plurality of slot lines define a location to form a slot in the shielding layer. The slot is formed in the shielding layer by cutting along the slot lines with a laser controlled by a scanner to read the slot lines. The slot lines include a left boundary slot line and right boundary slot line. The slot can be cut in the shielding layer by performing an edge cut along the slot lines, and performing a peel back to form the slot in the shielding layer. Alternatively, the slot can be cut in the shielding layer by performing a first cut in a first direction along the slot lines, and performing a second cut in a second direction opposite the first direction along the slot lines to form the slot in the shielding layer.

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