公开(公告)号：US20160379034A1

公开(公告)日：2016-12-29

申请号：US15189022

申请日：2016-06-22

Applicant: SunASIC Technologies, Inc.

Inventor： Chi-Chou LIN ,  Zheng-Ping HE

IPC: G06K9/00 ,  H01L27/146

CPC classification number: G06K9/0002 ,  H01L27/14609 ,  H01L27/14612

Abstract: A capacitive image sensor and a method for running the capacitive image sensor are disclosed. The capacitive image sensor includes a number of capacitive sensing elements, forming an array, each capacitive sensing element for transforming a distance between a portion of a surface of an approaching finger and a top surface thereof into an output voltage, wherein a value of the output voltage is changed by a driving signal exerted on the finger; an A/D converter, for converting the output voltage into a number and outputting the number; and a signal source, for providing the driving signal to the finger.

Abstract translation: 公开了电容式图像传感器和用于运行电容式图像传感器的方法。 电容式图像传感器包括形成阵列的多个电容感测元件，用于将接近的手指的表面的一部分与其顶表面之间的距离变换为输出电压的每个电容感测元件，其中输出的值 通过施加在手指上的驱动信号来改变电压; A / D转换器，用于将输出电压转换成一个数字并输出该数字; 以及用于向手指提供驱动信号的信号源。

公开(公告)号：US20160275332A1

公开(公告)日：2016-09-22

申请号：US14662561

申请日：2015-03-19

Applicant: SUNASIC TECHNOLOGIES, INC.

Inventor： Chi-Chou LIN ,  Zheng-Ping HE

IPC: G06K9/00

CPC classification number: G06K9/0002 ,  G06K9/00033 ,  G06K9/209

Abstract: An enhanced capacitive fingerprint sensing unit is disclosed. The enhanced capacitive fingerprint sensing unit includes a base structure and a fingerprint sensing structure. The fingerprint sensing structure has a first inter-metal dielectric layer, a second metal layer, a second inter-metal dielectric layer, a third metal layer, and a passivation layer. By connecting the third metal layer to Transient Voltage Suppressor (TVS) device, anti-Electrostatic Discharge (ESD) is available. By increasing the thicknesses of the first inter-metal dielectric layer and the second inter-metal dielectric layer, sensitivity of the enhanced capacitive fingerprint sensing unit can be improved.

Abstract translation: 公开了一种增强型电容式指纹感测单元。 增强电容指纹感测单元包括基本结构和指纹感测结构。 指纹感测结构具有第一金属间介电层，第二金属层，第二金属间介电层，第三金属层和钝化层。 通过将第三金属层连接到瞬态电压抑制器（TVS）器件，可以使用抗静电放电（ESD）。 通过增加第一金属间介电层和第二金属间介电层的厚度，可以提高增强电容式指纹检测单元的灵敏度。