公开(公告)号：US20140262000A1

公开(公告)日：2014-09-18

申请号：US14289748

申请日：2014-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mayumi Yamaguchi ,  Konami Izumi

IPC: H01L21/762 ,  B32B38/10

CPC classification number: H01L21/762 ,  B32B38/10 ,  B81C3/008 ,  B81C2201/019 ,  Y10T428/24802

Abstract: Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other.

Abstract translation: 没有牺牲层蚀刻，制造微结构和微机械。 在基板101上形成分离层102，在分离层102的上方形成作为可动电极的层103.在分离层102的界面处，作为可动电极的层103与基板分离 。 作为固定电极的层106形成在另一基板105上。作为可动电极的层103被固定到基板105，间隔层103被部分地设置在其间，使得层103成为可移动的 电极和作为固定电极的层106彼此面对。

公开(公告)号：US20130285059A1

公开(公告)日：2013-10-31

申请号：US13922302

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mayumi Yamaguchi ,  Konami Izumi

IPC: B81B7/00

CPC classification number: B81B7/008 ,  B81C1/00246 ,  B81C2203/0742 ,  H01L27/1222 ,  H01L29/78678

Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.

公开(公告)号：US10035388B2

公开(公告)日：2018-07-31

申请号：US15460293

申请日：2017-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mayumi Yamaguchi ,  Konami Izumi ,  Fuminori Tateishi

IPC: H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  B60C23/04 ,  B60C23/20 ,  B81C1/00 ,  H01L41/25 ,  H01L27/20 ,  H01L41/311 ,  H01L41/313

CPC classification number: B60C23/0493 ,  A61B5/02444 ,  A61B5/681 ,  B60C23/04 ,  B60C23/0408 ,  B60C23/0411 ,  B60C23/0413 ,  B60C23/20 ,  B81C1/0023 ,  G01L1/16 ,  G01L17/00 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/54 ,  H01L24/93 ,  H01L27/20 ,  H01L35/34 ,  H01L41/25 ,  H01L41/311 ,  H01L41/313 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  Y10T29/42 ,  H01L2924/00

Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

公开(公告)号：US09487390B2

公开(公告)日：2016-11-08

申请号：US14533156

申请日：2014-11-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi Yamaguchi ,  Konami Izumi

IPC: H01L29/82 ,  H01L29/78 ,  B81B7/00 ,  B81C1/00 ,  H01L27/12 ,  H01L29/786

CPC classification number: B81B7/008 ,  B81C1/00246 ,  B81C2203/0742 ,  H01L27/1222 ,  H01L29/78678

Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.

Abstract translation: 电路的半导体元件包括在栅电极上的半导体层。 半导体元件的半导体层由包含多晶硅的层形成，该多晶硅通过在基板上通过热处理或激光照射而使非晶硅结晶而获得。 所获得的包含多晶硅的层也用于结构体的结构层，例如结构体的可动电极。 因此，可以在一个基板上形成用于控制结构体的结构体和电路。 结果，微型机器可以被小型化。 此外，组装和包装是不必要的，从而可以降低制造成本。

公开(公告)号：US20150343857A1

公开(公告)日：2015-12-03

申请号：US14730362

申请日：2015-06-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi Yamaguchi ,  Konami Izumi ,  Fuminori Tateishi

IPC: B60C23/04 ,  B60C23/20

CPC classification number: B60C23/0493 ,  A61B5/02444 ,  A61B5/681 ,  B60C23/04 ,  B60C23/0408 ,  B60C23/0411 ,  B60C23/0413 ,  B60C23/20 ,  B81C1/0023 ,  G01L1/16 ,  G01L17/00 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/54 ,  H01L24/93 ,  H01L27/20 ,  H01L35/34 ,  H01L41/25 ,  H01L41/311 ,  H01L41/313 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  Y10T29/42 ,  H01L2924/00

Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

公开(公告)号：US20150053985A1

公开(公告)日：2015-02-26

申请号：US14533156

申请日：2014-11-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi Yamaguchi ,  Konami Izumi

IPC: B81B7/00 ,  H01L27/12 ,  H01L29/786

CPC classification number: B81B7/008 ,  B81C1/00246 ,  B81C2203/0742 ,  H01L27/1222 ,  H01L29/78678

Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.

Abstract translation: 电路的半导体元件包括在栅电极上的半导体层。 半导体元件的半导体层由包含多晶硅的层形成，该多晶硅通过在基板上通过热处理或激光照射而使非晶硅结晶而获得。 所获得的包含多晶硅的层也用于结构体的结构层，例如结构体的可动电极。 因此，可以在一个基板上形成用于控制结构体的结构体和电路。 结果，微型机器可以被小型化。 此外，组装和包装是不必要的，从而可以降低制造成本。

公开(公告)号：US08884384B2

公开(公告)日：2014-11-11

申请号：US13922302

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mayumi Yamaguchi ,  Konami Izumi

IPC: H01L29/82 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81B7/008 ,  B81C1/00246 ,  B81C2203/0742 ,  H01L27/1222 ,  H01L29/78678

Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.

Abstract translation: 电路的半导体元件包括在栅电极上的半导体层。 半导体元件的半导体层由包含多晶硅的层形成，该多晶硅通过在基板上通过热处理或激光照射而使非晶硅结晶而获得。 所获得的包含多晶硅的层也用于结构体的结构层，例如结构体的可动电极。 因此，可以在一个基板上形成用于控制结构体的结构体和电路。 结果，微型机器可以被小型化。 此外，组装和包装是不必要的，从而可以降低制造成本。

公开(公告)号：US10396447B2

公开(公告)日：2019-08-27

申请号：US15704523

申请日：2017-09-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Konami Izumi

IPC: H01Q1/38 ,  G06K19/04 ,  G06K19/077 ,  H01L27/12

Abstract: The invention provides a wireless chip which can secure the safety of consumers while being small in size, favorable in communication property, and inexpensive, and the invention also provides an application thereof. Further, the invention provides a wireless chip which can be recycled after being used for managing the manufacture, circulation, and retail. A wireless chip includes a layer including a semiconductor element, and an antenna. The antenna includes a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer, and has a spherical shape, an ovoid shape, an oval spherical shape like a go stone, an oval spherical shape like a rugby ball, or a disc shape, or has a cylindrical shape or a polygonal prism shape in which an outer edge portion thereof has a curved surface.

公开(公告)号：US09874979B2

公开(公告)日：2018-01-23

申请号：US15159063

申请日：2016-05-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshiyuki Kurokawa ,  Konami Izumi

IPC: G06F3/042 ,  G06F3/041 ,  G09G3/36 ,  G02F1/1333 ,  B81B3/00 ,  H01L27/12 ,  H01L27/144

CPC classification number: G06F3/0421 ,  B81B3/0021 ,  B81B2201/0264 ,  G02F1/13338 ,  G02F2201/44 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/042 ,  G09G3/3648 ,  H01L27/1225 ,  H01L27/1446

Abstract: To provide a touch panel with reduced disturbance of display and with improved mechanical strength by suppressing variation in the space between a pair of substrates which form the touch panel even when in contact with an object to be detected. A pixel portion including a plurality of pixels is provided between a pair of substrates. Each pixel includes a photosensor portion which detects that the object to be detected is in contact with one of the pair of substrates, and a MEMS portion which generates a mechanical displacement in a direction perpendicular to the pair of substrates when a signal based on a detection result of the photosensor portion is input.

公开(公告)号：US09597933B2

公开(公告)日：2017-03-21

申请号：US14730362

申请日：2015-06-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi Yamaguchi ,  Konami Izumi ,  Fuminori Tateishi

IPC: H01L21/00 ,  B60C23/04 ,  B60C23/20 ,  A61B5/00 ,  B81C1/00 ,  G01L1/16 ,  G01L17/00 ,  H01L27/20 ,  H01L41/311 ,  H01L41/313 ,  H01L21/02 ,  H01L21/54 ,  H01L23/00 ,  H01L35/34 ,  H01L41/25 ,  A61B5/024

CPC classification number: B60C23/0493 ,  A61B5/02444 ,  A61B5/681 ,  B60C23/04 ,  B60C23/0408 ,  B60C23/0411 ,  B60C23/0413 ,  B60C23/20 ,  B81C1/0023 ,  G01L1/16 ,  G01L17/00 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/54 ,  H01L24/93 ,  H01L27/20 ,  H01L35/34 ,  H01L41/25 ,  H01L41/311 ,  H01L41/313 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  Y10T29/42 ,  H01L2924/00

Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.