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公开(公告)号：US09312448B2
公开(公告)日：2016-04-12
申请号：US13940515
申请日：2013-07-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Maxim S Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/387 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/60 , H01S5/32
Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
Abstract translation: 提供了与发光结构中的半导体层的接触。 触点可以包括由金属形成并由一组空隙分开的多个接触区域。 接触区域可以通过基于触点的半导体接触结构的属性集合和触点的特征接触长度尺度选择的特征距离彼此分离。 空隙可以被配置成增加接触的整体反射率或透明度。
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公开(公告)号：US20140191398A1
公开(公告)日：2014-07-10
申请号：US14150949
申请日：2014-01-09
Applicant: Sensor Electronic Technology, Inc.
Inventor： Remigijus Gaska , Maxim S. Shatalov , Alexander Lunev , Alexander Dobrinsky , Jinwei Yang , Michael Shur
CPC classification number: H01L33/22 , H01L24/05 , H01L24/14 , H01L33/32 , H01L33/38 , H01L2224/0401 , H01L2224/06102 , H01L2224/1134 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2924/00
Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
Abstract translation: 公开了一种包括第一半导体层和与第一半导体层的接触的器件。 第一半导体层和触点之间的界面包括具有特征高度和特征宽度的第一粗糙度轮廓。 特征高度可以对应于第一粗糙度轮廓中波峰和相邻谷之间的平均垂直距离。 特征宽度可以对应于第一粗糙度轮廓中的波峰和相邻谷之间的平均横向距离。
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公开(公告)号：US20160197228A1
公开(公告)日：2016-07-07
申请号：US15069178
申请日：2016-03-14
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/10 , H01L33/32 , H01L33/46 , H01S5/0224
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
Abstract translation: 提供包括多个不均匀区域的半导体层。 每个不均匀区域具有与形成半导体层的材料不同的一个或多个属性。 不均匀区域可以包括基于具有目标波长的辐射配置的一个或多个区域。 这些区域可以包括透明和/或反射区域。 不均匀区域还可以包括具有比基于辐射的区域的电导率更高的导电率的一个或多个区域，例如至少高10％。
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Patent Agency Ranking
公开(公告)号：US09331244B2
公开(公告)日：2016-05-03
申请号：US14189012
申请日：2014-02-25
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/10 , H01L33/32 , H01L33/46 , H01S5/0224
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
Abstract translation: 提供包括多个不均匀区域的半导体层。 每个不均匀区域具有与形成半导体层的材料不同的一个或多个属性。 不均匀区域可以包括基于具有目标波长的辐射配置的一个或多个区域。 这些区域可以包括透明和/或反射区域。 不均匀区域还可以包括具有比基于辐射的区域的电导率更高的导电率的一个或多个区域，例如至少高10％。
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公开(公告)号：US20160118536A1
公开(公告)日：2016-04-28
申请号：US14984156
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/10 , H01L33/007 , H01L33/12 , H01L33/32 , H01L33/46
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
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公开(公告)号：US20160118535A1
公开(公告)日：2016-04-28
申请号：US14984511
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/382 , H01L31/00 , H01L31/022408 , H01L33/002 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/38 , H01L33/40 , H01L33/405
Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
Abstract translation: 提供了与发光结构中的半导体层的接触。 触点可以包括由金属形成并由一组空隙分开的多个接触区域。 接触区域可以通过基于触点的半导体接触结构的属性集合和触点的特征接触长度尺度选择的特征距离彼此分离。 空隙可以被配置成增加接触的整体反射率或透明度。
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公开(公告)号：US09287449B2
公开(公告)日：2016-03-15
申请号：US14150949
申请日：2014-01-09
Applicant: Sensor Electronic Technology, Inc.
Inventor： Remigijus Gaska , Maxim S. Shatalov , Alexander Lunev , Alexander Dobrinsky , Jinwei Yang , Michael Shur
CPC classification number: H01L33/22 , H01L24/05 , H01L24/14 , H01L33/32 , H01L33/38 , H01L2224/0401 , H01L2224/06102 , H01L2224/1134 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2924/00
Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
Abstract translation: 公开了一种包括第一半导体层和与第一半导体层的接触的器件。 第一半导体层和触点之间的界面包括具有特征高度和特征宽度的第一粗糙度轮廓。 特征高度可以对应于第一粗糙度轮廓中波峰和相邻谷之间的平均垂直距离。 特征宽度可以对应于第一粗糙度轮廓中的波峰和相邻谷之间的平均横向距离。
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公开(公告)号：US20140016660A1
公开(公告)日：2014-01-16
申请号：US13940515
申请日：2013-07-12
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Lunev , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/387 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/60 , H01S5/32
Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
Abstract translation: 提供了与发光结构中的半导体层的接触。 触点可以包括由金属形成并由一组空隙分开的多个接触区域。 接触区域可以通过基于触点的半导体接触结构的属性集合和触点的特征接触长度尺度选择的特征距离彼此分离。 空隙可以被配置成增加接触的整体反射率或透明度。
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