公开(公告)号：US20160280536A1

公开(公告)日：2016-09-29

申请号：US14777778

申请日：2014-03-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kippei SUGITA ,  Hiroyuki HASHIMOTO

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B82Y40/00

Abstract: A hollow structure is manufactured by preparing a lower structure which includes a concave portion, depositing a sacrifice film composed of an organic film on the lower structure by a vapor deposition polymerization method to bury the concave portion with the sacrifice film, removing an unnecessary portion of the sacrifice film, forming an upper structure on the sacrifice film with the unnecessary portion removed, and forming an air gap between the lower structure and the upper structure by removing the sacrifice film.

Abstract translation: 通过制备下部结构制造中空结构，该下部结构包括凹部，通过气相沉积聚合方法在下部结构上沉积由有机膜构成的牺牲膜以用牺牲膜掩埋凹部，除去不需要的部分 牺牲膜，在牺牲膜上形成上部结构，去除不需要的部分，并且通过去除牺牲膜在下部结构和上部结构之间形成气隙。

公开(公告)号：US20220406579A1

公开(公告)日：2022-12-22

申请号：US17843054

申请日：2022-06-17

Applicant: Tokyo Electron Limited

Inventor： Takashi KUBO ,  Kippei SUGITA ,  Yuhei SHIMATSU

IPC: H01J37/32 ,  G01J1/58

Abstract: A measurement method includes: (a) measuring an emission intensity for each wavelength of light detected from a plasma generated in a plasma processing apparatus at each different exposure time by a light receiving element; (b) specifying, with respect to each of a plurality of different individual wavelength ranges that constitutes a predetermined wavelength range, a distribution of the emission intensity in the individual wavelength range measured at an exposure time at which an emission intensity of a predetermined wavelength included in the individual wavelength range becomes an emission intensity within a predetermined range; (c) selecting a distribution of the emission intensity in the individual wavelength range from the distribution of the emission intensity specified in (b); and (d) outputting the distribution of the emission intensity selected for each individual wavelength range.

公开(公告)号：US20210391195A1

公开(公告)日：2021-12-16

申请号：US17335475

申请日：2021-06-01

Applicant: Tokyo Electron Limited

Inventor： Kippei SUGITA

IPC: H01L21/67 ,  H01L21/66 ,  G01P15/18

Abstract: An execution device according to exemplary embodiments includes an operation device, a first acceleration sensor, a second acceleration sensor, and a control device. The operation device executes a predetermined operation. The first acceleration sensor detects acceleration in a first direction along a horizontal direction. The second acceleration sensor detects acceleration in a second direction intersecting the first direction along the horizontal direction. The control device recognizes a transport position of the execution device in the semiconductor manufacturing apparatus based on output values from the first acceleration sensor and the second acceleration sensor. When it is recognized that the execution device is transported to a predetermined position, the control device causes the operation device to execute the predetermined operation.

公开(公告)号：US20210057252A1

公开(公告)日：2021-02-25

申请号：US17090168

申请日：2020-11-05

Applicant: Tokyo Electron Limited

Inventor： Kippei SUGITA ,  Daisuke KAWANO ,  Yoshihiro YANAGI

IPC: H01L21/677 ,  H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: A transfer method according to an exemplary embodiment includes: transferring a focus ring onto a stage by a transfer unit; transferring a measuring instrument into an inner region of the transferred focus ring and onto an electrostatic chuck; acquiring a measurement value group by the transferred measuring instrument; and adjusting a transfer position of the focus ring by the transfer unit such that the central position of the electrostatic chuck and the central position of the focus ring coincide with each other based on the measurement value group.

公开(公告)号：US20180284171A1

公开(公告)日：2018-10-04

申请号：US15938662

申请日：2018-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kippei SUGITA ,  Tomohide MINAMI ,  Satoru NISHIO

IPC: G01R27/26 ,  H01L21/67 ,  H01L21/683

Abstract: An electrostatic capacitance measuring device includes: a base substrate; a first sensor having a first electrode, one or more second sensors each having a second electrode, and a circuit board mounted on the base substrate. The first sensor is provided along an edge of the base substrate. The second sensors are fixed on the base substrate. The circuit board is connected to the first sensor and the second sensors, and configured to output high frequency signals to the first electrode and the one or more second electrodes and obtain a first measurement value indicating an electrostatic capacitance from a voltage amplitude at the first electrode and one or more second measurement values indicating electrostatic capacitances obtained from voltage amplitudes at the one or more second electrodes. The measuring device has one or more reference surfaces fixed on the measuring device and facing the one or more second electrodes.