公开(公告)号：US12206000B2

公开(公告)日：2025-01-21

申请号：US18416764

申请日：2024-01-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.

公开(公告)号：US20240322008A1

公开(公告)日：2024-09-26

申请号：US18731392

申请日：2024-06-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L21/308 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L21/3081 ,  H01L29/7787 ,  H01L29/2003 ,  H01L29/205

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer, forming a second barrier layer on the first barrier layer, forming a first hard mask on the second barrier layer, removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US20240136423A1

公开(公告)日：2024-04-25

申请号：US18395657

申请日：2023-12-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/7786

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

公开(公告)号：US20240014309A1

公开(公告)日：2024-01-11

申请号：US18370875

申请日：2023-09-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Chih-Tung Yeh

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/66462

Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer, wherein the composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. A gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covering the second III-V compound layer. Numerous electrodes are disposed on the insulating layer and contact the insulating layer, wherein the electrodes are positioned between the gate electrode and the drain electrode and a distribution of the electrodes decreases along a direction toward the gate electrode.

公开(公告)号：US11742418B2

公开(公告)日：2023-08-29

申请号：US17509053

申请日：2021-10-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L21/76 ,  H01L21/8258 ,  H01L21/8252 ,  H01L29/06

CPC classification number: H01L29/7786 ,  H01L21/76 ,  H01L21/8252 ,  H01L21/8258 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/66 ,  H01L29/66462 ,  H01L2924/13064 ,  H01L2924/14

Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer, a group III-V gate structure and a group III-V patterned structure. The group III-V body layer and the group III-V barrier layer are disposed on the substrate. The group III-V gate structure is disposed on the group III-V barrier layer within the active region. The group III-V patterned structure is disposed on the group III-V barrier layer within the isolation region. The composition of the group III-V patterned structure is the same as the composition of the group III-V gate structure.

公开(公告)号：US20210328050A1

公开(公告)日：2021-10-21

申请号：US17362956

申请日：2021-06-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Chih-Tung Yeh

IPC: H01L29/778 ,  H01L29/66

Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer, wherein the composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. A gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covering the second III-V compound layer. Numerous electrodes are disposed on the insulating layer and contact the insulating layer, wherein the electrodes are positioned between the gate electrode and the drain electrode and a distribution of the electrodes decreases along a direction toward the gate electrode.

公开(公告)号：US10991820B2

公开(公告)日：2021-04-27

申请号：US16953286

申请日：2020-11-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/66 ,  H01L21/02

Abstract: A method of forming an insulating structure of a high electron mobility transistor (HEMT) is provided, the method including: forming a gallium nitride layer, forming an aluminum gallium nitride layer on the gallium nitride layer, performing an ion doping step to dope a plurality of ions in the gallium nitride layer and the aluminum gallium nitride layer, forming an insulating doped region in the gallium nitride layer and the aluminum gallium nitride layer, forming two grooves on both sides of the insulating doped region, and filling an insulating layer in the two grooves and forming two sidewall insulating structures respectively positioned at two sides of the insulating doped region.

公开(公告)号：US20210083085A1

公开(公告)日：2021-03-18

申请号：US16659579

申请日：2019-10-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer, a group III-V gate structure and a group III-V patterned structure. The group III-V body layer and the group III-V barrier layer are disposed on the substrate. The group III-V gate structure is disposed on the group III-V barrier layer within the active region. The group III-V patterned structure is disposed on the group III-V barrier layer within the isolation region. The composition of the group III-V patterned structure is the same as the composition of the group III-V gate structure.

公开(公告)号：US20210036138A1

公开(公告)日：2021-02-04

申请号：US16558329

申请日：2019-09-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Chun-Liang Hou ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/20 ,  H01L21/306 ,  H01L29/66

Abstract: A high electron mobility transistor (HEMT) includes a substrate; a buffer layer over the substrate, a GaN layer over the buffer layer, a first AlGaN layer over the GaN layer, a first AlN layer over the AlGaN layer, and a p-GaN layer over the first AlN layer.

公开(公告)号：US20210020768A1

公开(公告)日：2021-01-21

申请号：US16535052

申请日：2019-08-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Chih-Tung Yeh

IPC: H01L29/778 ,  H01L29/66

Abstract: An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. The gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covers the second III-V compound layer. At least one electrode is disposed on the insulating layer and contacts the insulating layer, wherein a voltage is applied to the electrode.