公开(公告)号：US20210320187A1

公开(公告)日：2021-10-14

申请号：US16867579

申请日：2020-05-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Ming Kuo ,  Fu-Jung Chuang ,  Po-Jen Chuang ,  Chia-Wei Chang ,  Guan-Wei Huang ,  Chia-Yuan Chang

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/28

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a NMOS region and a PMOS region; forming a first gate structure on the NMOS region and a second gate structure on the PMOS region; forming a seal layer on the first gate structure and the second gate structure; forming a first lightly doped drain (LDD) adjacent to the first gate structure; forming a second LDD adjacent to the second gate structure; and performing a soak anneal process to boost an oxygen concentration of the seal layer for reaching a saturation level.

公开(公告)号：US11063135B2

公开(公告)日：2021-07-13

申请号：US15996539

申请日：2018-06-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Ming Kuo ,  Po-Jen Chuang ,  Yu-Ren Wang ,  Ying-Wei Yen ,  Fu-Jung Chuang ,  Ya-Yin Hsiao ,  Nan-Yuan Huang

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L29/08 ,  H01L29/78 ,  H01L29/51 ,  H01L21/321 ,  H01L21/3213 ,  H01L29/423 ,  H01L29/49 ,  H01L21/28

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

公开(公告)号：US10910277B2

公开(公告)日：2021-02-02

申请号：US16802463

申请日：2020-02-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Jung Chuang ,  Po-Jen Chuang ,  Yu-Ren Wang ,  Chi-Mao Hsu ,  Chia-Ming Kuo ,  Guan-Wei Huang ,  Chun-Hsien Lin

IPC: H01L21/00 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/762

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.

公开(公告)号：US20230386939A1

公开(公告)日：2023-11-30

申请号：US18233331

申请日：2023-08-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Jung Chuang ,  Po-Jen Chuang ,  Yu-Ren Wang ,  Chi-Mao Hsu ,  Chia-Ming Kuo ,  Guan-Wei Huang ,  Chun-Hsien Lin

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/762

CPC classification number: H01L21/823878 ,  H01L27/0924 ,  H01L21/76224 ,  H01L21/823821

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.

公开(公告)号：US20230327000A1

公开(公告)日：2023-10-12

申请号：US18208895

申请日：2023-06-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Jung Chuang ,  Tsuo-Wen Lu ,  Chia-Ming Kuo ,  Po-Jen Chuang ,  Chi-Mao Hsu

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L29/66795 ,  H01L29/66545 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L29/785 ,  H01L21/31116

Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on sidewalls of gate structure, a second spacer on sidewalls of the first spacer, a polymer block adjacent to the first spacer and on a corner between the gate structure and the substrate, an interfacial layer under the polymer block, and a source/drain region adjacent to two sides of the first spacer. Preferably, the polymer block is surrounded by the first spacer, the interfacial layer, and the second spacer.

公开(公告)号：US11271090B2

公开(公告)日：2022-03-08

申请号：US16867579

申请日：2020-05-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Ming Kuo ,  Fu-Jung Chuang ,  Po-Jen Chuang ,  Chia-Wei Chang ,  Guan-Wei Huang ,  Chia-Yuan Chang

IPC: H01L29/66 ,  H01L21/28 ,  H01L29/78 ,  H01L21/3105 ,  H01L21/265

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a NMOS region and a PMOS region; forming a first gate structure on the NMOS region and a second gate structure on the PMOS region; forming a seal layer on the first gate structure and the second gate structure; forming a first lightly doped drain (LDD) adjacent to the first gate structure; forming a second LDD adjacent to the second gate structure; and performing a soak anneal process to boost an oxygen concentration of the seal layer for reaching a saturation level.

公开(公告)号：US20210118750A1

公开(公告)日：2021-04-22

申请号：US17134465

申请日：2020-12-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Jung Chuang ,  Po-Jen Chuang ,  Yu-Ren Wang ,  Chi-Mao Hsu ,  Chia-Ming Kuo ,  Guan-Wei Huang ,  Chun-Hsien Lin

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/762

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.

公开(公告)号：US10892194B2

公开(公告)日：2021-01-12

申请号：US16914483

申请日：2020-06-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Jung Chuang ,  Ching-Ling Lin ,  Po-Jen Chuang ,  Yu-Ren Wang ,  Wen-An Liang ,  Chia-Ming Kuo ,  Guan-Wei Huang ,  Yuan-Yu Chung ,  I-Ming Tseng

IPC: H01L21/00 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/762

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate having a n-type work function metal layer or a p-type work function metal layer.

公开(公告)号：US20200176331A1

公开(公告)日：2020-06-04

申请号：US16782083

申请日：2020-02-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Jung Chuang ,  Ching-Ling Lin ,  Po-Jen Chuang ,  Yu-Ren Wang ,  Wen-An Liang ,  Chia-Ming Kuo ,  Guan-Wei Huang ,  Yuan-Yu Chung ,  I-Ming Tseng

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/762

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate.

公开(公告)号：US09685533B1

公开(公告)日：2017-06-20

申请号：US15049133

申请日：2016-02-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Ming Kuo ,  Po-Jen Chuang ,  Fu-Jung Chuang ,  Tsai-Yu Wen ,  Tsuo-Wen Lu ,  Yu-Ren Wang ,  Fu-Yu Tsai

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/49 ,  H01L29/78 ,  H01L21/28

CPC classification number: H01L29/66545 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0228 ,  H01L21/28088 ,  H01L21/31111 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, agate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.