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    Manufacturing method
    11.
    发明申请
    Manufacturing method 审中-公开
    制造方法

    公开(公告)号：US20060046497A1

    公开(公告)日：2006-03-02

    申请号：US11210117

    申请日：2005-08-24

    Applicant: Nobukazu Teranishi

    Inventor： Nobukazu Teranishi

    IPC: H01L21/302 ,  G03C5/00 ,  H01L21/311

    CPC classification number: B81C1/00611 ,  B81C2201/0123

    Abstract: A manufacturing method according to which surface unevenness of a workpiece on which microprocessing is performed such as a semiconductor substrate or a micromachine is readily flattened with a higher degree of flatness than the prior art even when depressions vary in depth, to thus facilitate the processing of the surface in a subsequent process. The manufacturing method includes the processes of applying a photosensitive resin 2 over the surface of a workpiece 1, exposing the applied resin using a grayscale mask 3 that corresponds to the surface shape of the resin, and developing the exposed resin and eliminating unhardened resin.

    Abstract translation: 一种制造方法，即使当凹陷在深度上变化时，其上执行微处理的工件的表面不均匀性如现有技术那样容易地以比现有技术更高的平坦度平坦化，从而便于加工 在后续过程中的表面。 制造方法包括在工件1的表面上涂布感光性树脂2的工序，使用与树脂的表面形状相对应的灰度掩模3曝光所施加的树脂，并显影露出的树脂并除去未硬化的树脂。

    Method for manufacturing a structured surface
    13.
    发明授权
    Method for manufacturing a structured surface 有权
    制造结构化表面的方法

    公开(公告)号：US09233843B2

    公开(公告)日：2016-01-12

    申请号：US14543116

    申请日：2014-11-17

    Applicant: Robert Bosch GmbH

    Inventor： Andrea Urban

    IPC: H01L21/00 ,  B81C1/00 ,  B81C99/00

    CPC classification number: B81C1/00857 ,  B81C1/00388 ,  B81C1/00531 ,  B81C1/00849 ,  B81C99/0025 ,  B81C2201/0123 ,  B81C2201/0125 ,  B81C2201/0132

    Abstract: A method is described for manufacturing a micromechanical structure, in which a structured surface is created in a substrate by an etching method in a first method step, and residues are at least partially removed from the structured surface in a second method step. In the second method step, an ambient pressure for the substrate which is lower than 60 Pa is set and a substrate temperature which is higher than 150° C. is set.

    Abstract translation: 描述了一种用于制造微机械结构的方法，其中通过第一方法步骤中的蚀刻方法在衬底中形成结构化表面，并且在第二方法步骤中至少部分地从结构化表面除去残余物。 在第二方法步骤中，设定低于60Pa的基板的环境压力，设定高于150℃的基板温度。

    METHOD FOR ETCHED CAVITY DEVICES
    15.
    发明申请
    METHOD FOR ETCHED CAVITY DEVICES 有权
    蚀刻孔装置的方法

    公开(公告)号：US20120264249A1

    公开(公告)日：2012-10-18

    申请号：US13088100

    申请日：2011-04-15

    Applicant: Srivatsa G. Kundalgurki ,  Scott Dye

    Inventor： Srivatsa G. Kundalgurki ,  Scott Dye

    IPC: H01L21/02 ,  H01L21/3065

    CPC classification number: G01L9/0042 ,  B81C1/00047 ,  B81C2201/0123 ,  B81C2201/0146 ,  B81C2201/017 ,  H01L21/02057 ,  H01L21/30608 ,  H01L21/3065

    Abstract: MEMS devices (40) using etched cavities (42) are desirably formed using multiple etching steps. Preliminary cavities (20) formed by locally anisotropic etching to nearly the final depth have irregular (46) sidewalls (44) and steep and/or inconsistent sidewall (44) to bottom (54) intersection angles (48). This leads to less than desired cavity diaphragm (26) burst strengths. Final cavities (42) with smooth sidewalls (50), smaller and consistent sidewall (50) to bottom (54) intersection angles (58), and having more than doubled cavity diaphragm (26) burst strengths are obtained by treating the preliminary cavities (20) with TMAH etchant, preferably relatively dilute TMAH etchant. In a preferred embodiment, a cleaning step is performed between the etching step and the TMAH treatment step to remove any anisotropic etching by-products present on the preliminary cavities' (20) initial sidewalls (44). The multi-step cavity etching procedure is especially useful for forming robust MEMS pressure sensors, but is applicable to any type of MEMS device.

    Abstract translation: 期望使用多个蚀刻步骤形成使用蚀刻腔（42）的MEMS器件（40）。 通过局部各向异性腐蚀形成的接近最终深度的初级腔（20）具有不规则的（46）侧壁（44）和陡峭和/或不一致的侧壁（44）至底部（54）交叉角（48）。 这导致比所需的腔膜（26）突发强度小。 通过处理预备空腔（2）获得具有平滑侧壁（50），更小且一致的侧壁（50）到底部（54）交叉角（58）并且具有多于两倍的腔隔膜（26）的突出强度的最终腔（42） 20）与TMAH蚀刻剂，优选相对稀释的TMAH蚀刻剂。 在优选的实施方案中，在蚀刻步骤和TMAH处理步骤之间进行清洁步骤以去除预备空腔（20）初始侧壁（44）上存在的任何各向异性蚀刻副产物。 多阶腔蚀刻程序对于形成坚固的MEMS压力传感器尤其有用，但适用于任何类型的MEMS器件。

    Structures using chemo-mechanical polishing and chemically-selective endpoint detection
    17.
    发明授权
    Structures using chemo-mechanical polishing and chemically-selective endpoint detection 失效
    使用化学机械抛光和化学选择性终点检测的结构

    公开(公告)号：US06545299B1

    公开(公告)日：2003-04-08

    申请号：US10174625

    申请日：2002-06-18

    Applicant: Jeffrey J. Peterson ,  Charles E. Hunt

    Inventor： Jeffrey J. Peterson ,  Charles E. Hunt

    IPC: H01L31072

    CPC classification number: B81C1/00611 ,  B24B37/013 ,  B24B37/042 ,  B81C2201/0104 ,  B81C2201/0123 ,  H01L21/30604 ,  H01L21/30608

    Abstract: One embodiment of the present invention provides a process that uses selective etching to form a structure on a silicon substrate. The process starts by receiving the silicon substrate with a first layer composed of a first material, which includes voids created by a first etching operation. The process then forms a second layer composed of a second material over the first layer, so that the second layer fills in portions of voids in the first layer created by the first etching operation. Next, the process performs a chemo-mechanical polishing operation on the second layer down to the first layer so that only remaining portions of the second layer, within the voids created by the first etching operation, remain. The system then forms a third layer composed of a third material over the first layer and the remaining portions of the second layer, and performs a second etching operation using a selective etchant to remove the remaining portions of the second layer, thereby creating voids between the first layer and the third layer.

    Abstract translation: 本发明的一个实施方案提供了使用选择性蚀刻在硅衬底上形成结构的方法。 该处理开始于接收硅衬底，第一层由第一材料构成，第一层包括由第一蚀刻操作产生的空隙。 然后，该过程在第一层上形成由第二材料构成的第二层，使得第二层填充由第一蚀刻操作产生的第一层中的空隙的部分。 接下来，该过程在第二层上进行到第一层的化学机械抛光操作，使得仅剩下由第一蚀刻操作产生的空隙内的第二层的剩余部分。 然后，该系统在第一层和第二层的其余部分上形成由第三材料组成的第三层，并且使用选择性蚀刻剂进行第二蚀刻操作以去除第二层的剩余部分，从而在第二层之间产生空隙 第一层和第三层。

    Fabricating structures using chemo-mechanical polishing and chemically-selective endpoint detection
    18.
    发明授权
    Fabricating structures using chemo-mechanical polishing and chemically-selective endpoint detection 失效
    使用化学机械抛光和化学选择性终点检测的制造结构

    公开(公告)号：US06465357B1

    公开(公告)日：2002-10-15

    申请号：US09900299

    申请日：2001-07-05

    Applicant: Jeffrey J. Peterson ,  Charles E. Hunt

    Inventor： Jeffrey J. Peterson ,  Charles E. Hunt

    IPC: H01L21311

    CPC classification number: B81C1/00611 ,  B24B37/013 ,  B24B37/042 ,  B81C2201/0104 ,  B81C2201/0123 ,  H01L21/30604 ,  H01L21/30608

    Abstract: One embodiment of the present invention provides a process that uses selective etching to form a structure on a silicon substrate. The process starts by receiving the silicon substrate with a first layer composed of a first material, which includes voids created by a first etching operation. The process then forms a second layer composed of a second material over the first layer, so that the a second layer fills in portions of voids in the first layer created by the first etching operation. Next, the process performs a chemo-mechanical polishing operation on the second layer down to the first layer so that only remaining portions of the second layer, within the voids created by the first etching operation, remain. The system then forms a third layer composed of a third material over the first layer and the remaining portions of the second layer, and performs a second etching operation using a selective etchant to remove the remaining portions of the second layer, thereby creating voids between the first layer and the third layer.

    Abstract translation: 本发明的一个实施方案提供了使用选择性蚀刻在硅衬底上形成结构的方法。 该处理开始于接收硅衬底，第一层由第一材料构成，第一层包括由第一蚀刻操作产生的空隙。 然后，该过程在第一层上形成由第二材料组成的第二层，使得第二层填充由第一蚀刻操作产生的第一层中的空隙的部分。 接下来，该过程在第二层上进行到第一层的化学机械抛光操作，使得仅剩下由第一蚀刻操作产生的空隙内的第二层的剩余部分。 然后，该系统在第一层和第二层的其余部分上形成由第三材料组成的第三层，并且使用选择性蚀刻剂进行第二蚀刻操作以去除第二层的剩余部分，从而在第二层之间产生空隙 第一层和第三层。

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