公开(公告)号：US20020013070A1

公开(公告)日：2002-01-31

申请号：US09923600

申请日：2001-08-06

Applicant: Xerox Corporation

Inventor： David K. Fork ,  Jackson Ho ,  Rachel King-ha Lau ,  JengPing Lu

IPC: H05K001/00

CPC classification number: G01R1/06716 ,  B81B2203/0118 ,  B81C1/00484 ,  B81C2201/0136 ,  B81C2203/058 ,  G01R1/06727 ,  G01R1/07342 ,  G01R3/00 ,  H01L23/49811 ,  H01L2924/0002 ,  H01R4/48 ,  H01R12/57 ,  H05K3/4092 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/4914 ,  H01L2924/00

Abstract: Efficient methods for lithographically fabricating spring structures onto a substrate containing contact pads or metal vias by forming both the spring metal and release material layers using a single mask. Specifically, a pad of release material is self-aligned to the spring metal finger using a photoresist mask or a plated metal pattern, or using lift-off processing techniques. A release mask is then used to release the spring metal finger while retaining a portion of the release material that secures the anchor portion of the spring metal finger to the substrate. When the release material is electrically conductive (e.g., titanium), this release material portion is positioned directly over the contact pad or metal via, and acts as a conduit to the spring metal finger in the completed spring structure. When the release material is non-conductive, a metal strap is formed to connect the spring metal finger to the contact pad or metal via, and also to further anchor the spring metal finger to the substrate.

Abstract translation: 通过使用单个掩模通过形成弹簧金属和释放材料层来将含有接触垫或金属通孔的弹性结构光刻制造到衬底上的有效方法。 具体地说，使用光致抗蚀剂掩模或电镀金属图案或使用剥离处理技术，释放材料垫与弹簧金属手指自对准。 然后使用释放掩模释放弹簧金属指，同时保持将弹簧金属指的锚固部分固定到基底的释放材料的一部分。 当释放材料是导电的（例如钛）时，该释放材料部分直接位于接触垫或金属通孔上方，并且用作在完成的弹簧结构中的弹簧金属指的导管。 当释放材料不导电时，形成金属带以将弹簧金属指连接到接触垫或金属通孔，并且还将弹簧金属指状物进一步锚定到基底。

公开(公告)号：US5674406A

公开(公告)日：1997-10-07

申请号：US332839

申请日：1994-11-01

Applicant: Jong-Hyun Lee

Inventor： Jong-Hyun Lee

IPC: H01L21/3063 ,  B81B3/00 ,  H01L21/20 ,  H01L21/302 ,  H01L21/308 ,  H01L29/84 ,  H01L21/00 ,  B44C1/22

CPC classification number: B81B3/0051 ,  B81C1/00595 ,  B81C2201/0136 ,  Y10S438/96

Abstract: A stopper manufacturing method of a silicon micromachining structure comping steps of growing an oxidized film on a n-type substrate; opening a n.sup.+ -diffusion window by the photo-lithography through first selective diffusion and forming a n.sup.+ -diffusion region using n-type impurity sources; forming a n.sup.+ diffusion region by the depth 0.5 to 5 .mu.m on the portion subject to form a stopper through the secondary diffusion; removing the oxidized film and growing a n-type silicon epitaxial layer on the front surface of the substrate; etching the n-type silicon epitaxial layer, selectively, exposing the n.sup.+ -layer and depositing a porous silicon layer in HF solution by the anodic reaction; and etching the porous silicon layer away in etching solution to form a microstructure, thereby preventing the side etching and the breaking down of the microstructure by the exterior shock.

Abstract translation: 一种硅微加工结构的制动器制造方法，包括在n型基板上生长氧化膜的步骤; 通过第一选择性扩散通过光刻打开n +扩散窗，并使用n型杂质源形成n +扩散区; 在通过二次扩散形成塞子的部分上形成0.5〜5μm的深度的n +扩散区域; 去除所述氧化膜并在所述衬底的前表面上生长n型硅外延层; 蚀刻n型硅外延层，选择性地暴露n +层，并通过阳极反应在HF溶液中沉积多孔硅层; 并且在蚀刻溶液中蚀刻多孔硅层以形成微观结构，从而防止由外部冲击引起的侧面蚀刻和微结构的破坏。

公开(公告)号：US4614119A

公开(公告)日：1986-09-30

申请号：US709870

申请日：1985-03-08

Applicant: Paul M. Zavracky ,  Stephen D. Senturia ,  Richard H. Morrison, Jr.

Inventor： Paul M. Zavracky ,  Stephen D. Senturia ,  Richard H. Morrison, Jr.

IPC: B81C1/00 ,  G01L9/00 ,  H01L21/20 ,  G01L11/00 ,  B44C1/22 ,  C23F1/02 ,  H01L21/306

CPC classification number: B81C1/0015 ,  G01L9/002 ,  H01L21/2007 ,  B81C2201/0136 ,  B81C2201/019

Abstract: A microminiature resonant hollow beam sensor is manufactured by micromachining and microfabrication techniques. Specifically, a sensor is formed by etching troughs in a pair of silicon substrates, joining the substrates face-to-face, and etching away unwanted material to free the resonant hollow beam sensors.

Abstract translation: 微型共振空心光束传感器通过微加工和微细加工技术制造。 具体地，通过在一对硅衬底中蚀刻槽形成传感器，将衬底面对面地接合，并且蚀刻掉不想要的材料以释放共振中空束传感器。

公开(公告)号：US11756793B2

公开(公告)日：2023-09-12

申请号：US16906206

申请日：2020-06-19

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei Ishii ,  Kathryn Maier ,  Medhat Khalil

IPC: H01L21/306 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/30621 ,  H01L21/3065 ,  H01L21/30604 ,  H01L21/32136 ,  H01L21/32138 ,  B81C2201/0136 ,  H01L21/308

Abstract: A semiconductor device manufacturing method includes the steps of etching a semiconductor material by using plasma, forming a damage layer on the semiconductor material, and removing the damage layer such that a relatively low temperature process can form a fine pattern with a vertical cross section using a compound semiconductor material or the like.

公开(公告)号：US20120018779A1

公开(公告)日：2012-01-26

申请号：US12740607

申请日：2008-10-13

Applicant: Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

Inventor： Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC: H01L29/06 ,  H01L21/20

CPC classification number: B81C1/00103 ,  B81B2203/0384 ,  B81C2201/0136

Abstract: A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by thermal oxidation of a SiGe mixed semiconductor layer.

Abstract translation: 一种用于生产具有凸起状侧壁轮廓形状或能够被设定的倾斜角的微机械图案的方法，从存在于或沉积在硅半导体衬底上的SiGe混合半导体层中蚀刻微机械图案， 通过干法化学蚀刻SiGe混合半导体层; 通过改变要蚀刻的SiGe混合半导体层中的锗比例来显影微机械图案的侧壁轮廓形状; 存在于要被更强蚀刻的区域中更大的锗比例; SiGe混合半导体层中的锗比例的变化通过选自包括沉积具有不同锗含量的SiGe混合半导体层，将锗引入到硅半导体层或SiGe混合半导体层中的方法来设置，将硅引入 锗层或SiGe混合半导体层和/或通过SiGe混合半导体层的热氧化。

公开(公告)号：US07843025B2

公开(公告)日：2010-11-30

申请号：US12359904

申请日：2009-01-26

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: H01L21/00

CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00658 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract translation: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

公开(公告)号：US20090127640A1

公开(公告)日：2009-05-21

申请号：US12359904

申请日：2009-01-26

Applicant: Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

Inventor： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

IPC: H01L29/84 ,  H01L21/3213

CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00658 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract translation: 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。

公开(公告)号：US07354864B2

公开(公告)日：2008-04-08

申请号：US11276320

申请日：2006-02-24

Applicant: Noriyuki Shimoji ,  Masaki Takaoka

Inventor： Noriyuki Shimoji ,  Masaki Takaoka

IPC: H01L21/302

CPC classification number: F04B43/043 ,  B81B2203/0353 ,  B81C1/00626 ,  B81C2201/0136 ,  H01L29/0657

Abstract: A method of producing a semiconductor device is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width W2 is formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width W2 thereof is narrower than a width W4 of the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width W1 and position of an opening in the upper surface of the substrate can be controlled.

Abstract translation: 公开了一种制造半导体器件的方法，其中在半导体衬底的上表面中形成有从其下表面的通孔，并且所需尺寸的开口形成在所述半导体衬底的上表面上的期望位置 基质。 在半导体衬底中形成用作蚀刻阻挡层的引导件。 在导向件中形成宽度为W 2的开口。 开口面向形成通孔所使用的掩模中的开口，其宽度W 2比掩模中的开口的宽度W 4窄。 蚀刻进行的方向由蚀刻形成在导向器中的开口控制，从基板的下表面传导到基板的上表面，因此宽度W 1和上部开口的位置的偏差 可以控制基板的表面。

公开(公告)号：US06803637B2

公开(公告)日：2004-10-12

申请号：US10169464

申请日：2002-10-28

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: B81B300

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2201/036 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2203/0136

Abstract: A micromechanical component having a substrate made from a substrate material having a first doping type, a micromechanical functional structure provided in the substrate and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones made from the substrate material having a second doping type, the zones being at least partially surrounded by a cavity, and the cover layer has a porous layer made from the substrate material.

Abstract translation: 一种具有由具有第一掺杂类型的衬底材料制成的衬底的微机械部件，设置在衬底中的微机械功能结构以及至少部分地覆盖微机械功能结构的覆盖层。 微机械功能结构具有由具有第二掺杂类型的基底材料制成的区域，所述区域至少部分地被空腔包围，并且覆盖层具有由基底材料制成的多孔层。

公开(公告)号：US06620712B2

公开(公告)日：2003-09-16

申请号：US10011350

申请日：2001-11-12

Applicant: Liji Huang ,  Naiqian Han ,  Yahong Yao ,  Gaofeng Wang

Inventor： Liji Huang ,  Naiqian Han ,  Yahong Yao ,  Gaofeng Wang

IPC: H01L2100

CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00571 ,  B81C2201/0109 ,  B81C2201/0136

Abstract: The present invention discloses an electro-optical device support on a substrate. The electro-optical device includes a sacrificial layer disposed on the substrate having a chamber-wall region surrounding and defining an optical chamber. The electro-optical device further includes a membrane layer disposed on top of the sacrificial layer having a chamber-removal opening surrounding and defining an electric tunable membrane for transmitting an optical signal therethrough. The electrically tunable membrane disposed on top of the optical chamber surrounded by the chamber wall regions. The chamber-wall region is doped with ion-dopants for maintaining the chamber-wall region for removal-resistance under a chamber-forming process performed through the chamber-removal opening. In a preferred embodiment, the chamber-wall region is a doped silicon dioxide region with carbon or nitrogen. In another preferred embodiment, the chamber-wall region is a nitrogen ion-doped SiNxOy region. In another preferred embodiment, the optical chamber is an etched chamber formed by etching through the chamber removal opening for etching off an etch-enhanced region surrounded by an etch-resistant region constituting the chamber wall.

Abstract translation: 本发明公开了一种在基片上的电光装置支架。 电光装置包括设置在基板上的牺牲层，其具有围绕并限定光学室的室壁区域。 电光装置还包括设置在牺牲层顶部的膜层，其具有围绕并限定用于透射光信号的电可调膜的室去除开口。 设置在由室壁区域围绕的光学室的顶部上的电可调膜。 室壁区域掺杂有离子掺杂剂，用于在通过室去除开口进行的室形成过程中维持室壁区域以用于去除电阻。 在优选实施例中，室壁区域是具有碳或氮的掺杂二氧化硅区域。 在另一个优选的实施方案中，室壁区域是氮离子掺杂的SiN x O y区域。 在另一个优选实施例中，光学室是通过蚀刻通过室去除开口形成的蚀刻室，用于蚀刻由构成室壁的耐蚀刻区域围绕的蚀刻增强区域。