Abstract:
The present disclosure relates to an optical module, including: a carrier, a emitter, a detector and an encapsulant. The carrier has a first surface. The emitter is disposed above the first surface. The detector is disposed above the first surface. The encapsulant is disposed on the first surface and exposes at least a portion of the emitter.
Abstract:
In one instance, an optical interconnection is embedded in a structure. The optical interconnection embedded in the structure enables interfacing electrical subsystems and sharing electrical signals across the structure by converting electrical signals into optical and vice a versa by means of the optical data pipe technology. The system of these teachings enables methods for decreasing the weight and size of the system, for decreasing sensitivity to electromagnetic interference and for obtaining data from the interior of a system.
Abstract:
An optical sensor includes a light receiving portion, a definition portion, and a selection portion. The definition portion defines an incident angle of an incident light that enters the light receiving portion. The selection portion selects a wavelength of the incident light that enters the light receiving portion. The definition portion has a light shielding film disposed above the light receiving portion, and an opening formed in the light shielding film. The selection portion has a slit formed in the light shielding film disposed within a region surrounded by the opening.
Abstract:
Manufacturing opto-electronic modules (1) includes providing a substrate wafer (PW) on which detecting members (D) are arranged; providing a spacer wafer (SW); providing an optics wafer (OW), the optics wafer comprising transparent portions (t) transparent for light generally detectable by the detecting members and at least one blocking portion (b) for substantially attenuating or blocking incident light generally detectable by the detecting members; and preparing a wafer stack (2) in which the spacer wafer (SW) is arranged between the substrate wafer (PW) and the optics wafer (OW) such that the detecting members (D) are arranged between the substrate wafer and the optics wafer. Emission members (E) for emitting light generally detectable by the detecting members (D) can be arranged on the substrate wafer (PW). Single modules (1) can be obtained by separating the wafer stack (2) into separate modules.
Abstract:
In one instance, an optical interconnection is embedded in a structure. The optical interconnection embedded in the structure enables interfacing electrical subsystems and sharing electrical signals across the structure by converting electrical signals into optical and vice a versa by means of the optical data pipe technology. The system of these teachings enables methods for decreasing the weight and size of the system, for decreasing sensitivity to electromagnetic interference and for obtaining data from the interior of a system.
Abstract:
The light sensor according to an exemplary embodiment of the present invention is a multi-function light sensor that is equipped at low cost with both an ultraviolet light sensor and a visible light sensor and suppresses leak current between adjacent elements on the same substrate. The light sensor is equipped with a SOI substrate, formed from a silicon oxide insulating film and a silicon semiconductor layer made up from single crystal silicon, on a silicon substrate. Photodiodes PD1 and PD2 are formed on the silicon substrate, and a photodiode UV-PD, and main portions (source, drain and channel regions) of a MOSFET configuring a control circuit, are formed in the silicon semiconductor layer on the insulating film.
Abstract:
A light sensor and light sensing system to detect an intensity of incident light and an angle of incidence of the incident light. The light sensor includes a dielectric layer, a plurality of photo detectors coupled relative to the dielectric layer, and a plurality of stacks of opaque slats embedded within the dielectric layer. The dielectric layer is substantially transparent to the incident light. The photo detectors detect the incident light through the dielectric layer. The stacks of opaque slats are approximately parallel to an interface between the dielectric layer and the photo detectors. The stacks of opaque slats define light apertures between adjacent stacks of opaque slats. At least some of the stacks of opaque slats are arranged at a non-zero angle relative to other stacks of the opaque slats.
Abstract:
Provided is a photodetection device which is small in size and has excellent sensitivity. The photodetection device (10) puts cathode terminals of photodiodes (1 and 2) having different spectral characteristics, or a photodiode (1) provided with an optical filter and a photodiode (2) provided with a light shield layer, into an open end state, and detects light intensity of a desired wavelength region according to a difference in electric charges that have been stored in those photodiodes in a given period of time. Since the photodiodes 1 and 2 store electric charges, even if a photocurrent is small, it is possible to store the photocurrent to obtain the electric charges required for detection, permitting achievement of downsizing and high detection performance of the semiconductor device on which the photodiodes 1 and 2 are formed. It is also possible to realize a wide dynamic range by making the electric charge storage time variable according to the light intensity, to suppress electric power consumption by intermittently driving an element required for differential detection at the time of differential detection, and to reduce an effect from flicker by averaging the output.
Abstract:
Optical sensors containing reduced amounts of cross talk, as well as methods for making and using such sensors are described. The sensors contain a light absorption coating that is placed on a portion of the external surface of the optical sensor near the detector. This absorption coating reduces the amount of cross talk by reducing the amount of light reflected inside a transparent package of the sensor. As well, the coating can also reduce the amount of ambient and/or stray light that enters the sensor. The coating adds little cost or complexity to the manufacturing process for the sensors, yet reduces the cross talk without substantially increasing the size of the sensor or without increasing any reliability risks. Other embodiments are also described.
Abstract:
A method of producing a solid-state imaging device includes the steps of forming on a substrate a photoelectric conversion portion that receives light on a light-receiving surface and that photoelectrically converts the received light to generate a signal charge, forming above the light-receiving surface an optical waveguide that guides light to the light-receiving surface, and forming above the optical waveguide a color filter which colors light and from which colored light is emitted to the optical waveguide, wherein, in forming the color filter, the color filter is formed from a photosensitive resin film containing a dye by performing an exposure process and then performing a development process on the film, and in forming the optical waveguide, a core portion of the optical waveguide is formed so that the core portion absorbs exposure light radiated onto the photosensitive resin film when the exposure process is performed.