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    METHODS OF PROCESSING METALLIC MATERIALS
    14.
    发明申请
    METHODS OF PROCESSING METALLIC MATERIALS 审中-公开
    金属材料加工方法

    公开(公告)号：US20140230605A1

    公开(公告)日：2014-08-21

    申请号：US14260570

    申请日：2014-04-24

    Applicant: ATI PROPERTIES, INC.

    Inventor： Robin M. Forbes Jones

    IPC: C22B4/00

    CPC classification number: C22B4/005 ,  B22D11/11 ,  C22B9/04 ,  C22B9/226 ,  C22B9/228 ,  F27B3/08 ,  F27B3/20 ,  F27B5/04 ,  F27D99/0006 ,  H01J37/077 ,  H01J37/305 ,  H01J2237/15 ,  H01J2237/3128

    Abstract: A method of processing a metallic material includes introducing an electrically conductive metallic material comprising at least one of a metal and a metallic alloy into a furnace chamber maintained at a low pressure relative to atmospheric pressure. A first electron field having a first area of coverage is generated using at least a first ion plasma electron emitter, and the material within the furnace chamber is subjected to the first electron field to heat the material to a temperature above a melting temperature of the material. A second electron field having a second area of coverage smaller than the first area of coverage is generated using a second ion plasma electron emitter. At least one of any solid condensate within the furnace chamber, any solidified portions of the electrically conductive metallic material, and regions of a solidifying ingot to the second electron field, is subjected to the second electron field, using a steering system.

    Abstract translation: 一种处理金属材料的方法包括将包含金属和金属合金中的至少一种的导电金属材料引入保持在相对于大气压力的低压下的炉室中。 使用至少第一离子等离子体电子发射体产生具有第一覆盖区域的第一电子场，并且使炉室内的材料经受第一电子场以将材料加热到高于材料的熔融温度的温度 。 使用第二离子等离子体电子发射器产生具有小于第一覆盖区域的第二覆盖面积的第二电子场。 使用转向系统，在炉室内的至少一个固体冷凝物，导电金属材料的任何固化部分和固化锭到第二电子场的区域都经受第二电子场。

    METHOD AND APPARATUS FOR GENERATING ELECTRON BEAMS
    16.
    发明申请
    METHOD AND APPARATUS FOR GENERATING ELECTRON BEAMS 有权
    用于生成电子束的方法和装置

    公开(公告)号：US20130300286A1

    公开(公告)日：2013-11-14

    申请号：US13828112

    申请日：2013-03-14

    Applicant: ARCAM AB

    Inventor： Ulric Ljungblad ,  Mattias Svensson

    IPC: H01J29/52

    CPC classification number: H01J29/52 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  H01J37/077 ,  H01J37/305 ,  H01J37/3178 ,  H01J2237/043 ,  H01J2237/3128 ,  H01J2237/31732

    Abstract: Various embodiments of the present invention relate to a plasma electron source apparatus. The apparatus comprises a cathode discharge chamber in which a plasma is generated, an exit hole provided in said cathode discharge chamber from which electrons from the plasma are extracted by an accelerating field provided between said cathode discharge chamber and an anode, at least one plasma confinement device, and a switching mechanism for switching the at least one plasma confinement device between a first value allowing for electron extraction from the plasma and a second value prohibiting electron extraction from the plasma. Associated methods are also provided.

    Abstract translation: 本发明的各种实施方式涉及等离子体电子源装置。 该装置包括：阴极放电室，其中产生等离子体，设置在所述阴极放电室中的出射孔，来自等离子体的电子由所述阴极放电室和阳极之间的加速场提取，至少一个等离子体限制 装置和切换机构，用于在允许从等离子体提取电子的第一值和禁止从等离子体中提取电子的第二值之间切换至少一个等离子体约束装置。 还提供了相关的方法。

    MELTING FURNACE INCLUDING WIRE-DISCHARGE ION PLASMA ELECTRON EMITTER
    17.
    发明申请
    MELTING FURNACE INCLUDING WIRE-DISCHARGE ION PLASMA ELECTRON EMITTER 有权
    熔炼炉，包括放电离子等离子体电子发射器

    公开(公告)号：US20130279533A1

    公开(公告)日：2013-10-24

    申请号：US13919233

    申请日：2013-06-17

    Applicant: Robin M. Forbes Jones ,  Richard L. Kennedy

    Inventor： Robin M. Forbes Jones ,  Richard L. Kennedy

    IPC: F27D11/00

    CPC classification number: F27D11/00 ,  B22D11/11 ,  C22B9/04 ,  C22B9/226 ,  C22B9/228 ,  F27B3/08 ,  F27B3/20 ,  F27B5/04 ,  F27D99/0006 ,  H01J37/077 ,  H01J37/305 ,  H01J2237/3128

    Abstract: An apparatus for melting an electrically conductive metallic material includes a vacuum chamber and a hearth disposed in the vacuum chamber. At least one wire-discharge ion plasma electron emitter is disposed in or adjacent the vacuum chamber and is positioned to direct a wide-area field of electrons into the vacuum chamber, wherein the wide-area electron field has sufficient energy to heat the electrically conductive metallic material to its melting temperature. The apparatus may further include at least one of a mold and an atomizing apparatus which is in communication with the vacuum chamber and is positioned to receive molten material from the hearth.

    Abstract translation: 用于熔化导电金属材料的设备包括设置在真空室中的真空室和炉床。 至少一个线放电离子等离子体电子发射器设置在真空室中或其附近，并且被定位成将电场的大面积区域引导到真空室中，其中广域电子场具有足够的能量以加热导电 金属材料达到其熔融温度。 该装置还可以包括模具和雾化装置中的至少一个，该模具和雾化装置与真空室连通并定位成从炉床接收熔融材料。

    LINEAR ELECTRON SOURCE, EVAPORATOR USING LINEAR ELECTRON SOURCE, AND APPLICATIONS OF ELECTRON SOURCES
    18.
    发明申请
    LINEAR ELECTRON SOURCE, EVAPORATOR USING LINEAR ELECTRON SOURCE, AND APPLICATIONS OF ELECTRON SOURCES 有权
    线性电子源，使用线性电子源的蒸发器，以及电子源的应用

    公开(公告)号：US20090159811A1

    公开(公告)日：2009-06-25

    申请号：US12272477

    申请日：2008-11-17

    Applicant: Guenter Klemm ,  Volker Hacker ,  Hans-Georg Lotz

    Inventor： Guenter Klemm ,  Volker Hacker ,  Hans-Georg Lotz

    IPC: H01J3/14 ,  G21G4/00

    CPC classification number: H01J37/077 ,  H01J3/025 ,  H01J37/3053

    Abstract: A linear plasma electron source is provided. The linear plasma electron source includes a housing acting as a first electrode, the housing having side walls a slit opening in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source, a second electrode being arranged within the housing and having a first side facing the slit opening, the first side being spaced from the slit opening by a first distance, wherein the length of the electron source in the length direction is at least 5 times the first distance, and at least one gas supply for providing a gas into the housing.

    Abstract translation: 提供线性等离子体电子源。 线性等离子体电子源包括用作第一电极的壳体，壳体具有在壳体中用于侵入电子束的狭缝开口的侧壁，狭缝开口限定源的长度方向，第二电极布置在 壳体并且具有面向狭缝开口的第一侧，第一侧与狭缝开口间隔开第一距离，其中电子源在长度方向上的长度为第一距离的至少5倍，并且至少一个气体 用于向壳体提供气体。

    NON-AMBIPOLAR RADIO-FREQUENCY PLASMA ELECTRON SOURCE AND SYSTEMS AND METHODS FOR GENERATING ELECTRON BEAMS
    19.
    发明申请
    NON-AMBIPOLAR RADIO-FREQUENCY PLASMA ELECTRON SOURCE AND SYSTEMS AND METHODS FOR GENERATING ELECTRON BEAMS 有权
    非磁性无线电频率等离子体电子源和系统及其生成方法

    公开(公告)号：US20080067430A1

    公开(公告)日：2008-03-20

    申请号：US11427273

    申请日：2006-06-28

    Applicant: Noah Hershkowitz ,  Benjamin Longmier ,  Scott Baalrud

    Inventor： Noah Hershkowitz ,  Benjamin Longmier ,  Scott Baalrud

    IPC: H01J37/077

    CPC classification number: H01J37/077 ,  F03H1/0025 ,  H01J3/025 ,  H01J2237/31

    Abstract: An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

    Abstract translation: 电子产生装置通过电子鞘提取从RF场产生的等离子体中的电子。 电子鞘位于负偏压导电表面一端的接地环附近，通常为圆柱体。 在稳态轴向磁场的存在下，提取的电子通过接地环。 等离子体中足够大的磁场和/或RF功率允许螺旋形血浆产生。 与电子损失面积相比，离子损失面积足够大，以允许离开等离子体的所有电子的全非双极萃取。 负偏置导电表面中的空隙允许由天线提供的时变磁场感应地耦合到导电表面内的等离子体。 导电表面用作法拉第屏蔽，其减少任何随时间变化的电场进入导电表面，即阻止天线和等离子体之间的电容耦合。

    Slotted antenna waveguide plasma source
    20.
    发明授权
    Slotted antenna waveguide plasma source 失效
    开槽天线波导等离子体源

    公开(公告)号：US07305935B1

    公开(公告)日：2007-12-11

    申请号：US10925499

    申请日：2004-08-25

    Applicant: John Foster

    Inventor： John Foster

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC classification number: C23C14/357 ,  H01J27/18 ,  H01J37/077 ,  H01J37/08 ,  H01J37/32422 ,  H01J37/32678 ,  H01J2237/0041 ,  H01J2237/06366 ,  H01J2237/3114 ,  H01J2237/31701 ,  H05H1/46

    Abstract: A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster applications, ion implantation, and related applications. This slotted antenna plasma source invention operates on the principle of electron cyclotron resonance (ECR). It employs no window and it is completely electrodeless and therefore its operation lifetime is long, being limited only by either the microwave generator itself or charged particle extraction grids if used. The high density plasma source can also be used to extract an electron beam that can be used as a plasma cathode neutralizer for ion source beam neutralization applications.

    Abstract translation: 已经证明通过使用无窗无电极矩形开槽天线波导等离子体源的微波注入产生的高密度等离子体。 等离子探头测量表明，该源可适用于低功率离子推进器应用，离子注入和相关应用。 这种开槽天线等离子体源发明以电子回旋共振（ECR）为原则。 它没有窗户，它是完全无电极的，因此其使用寿命长，仅受微波发生器本身或带电粒子提取网格的限制（如果使用）。 高密度等离子体源还可用于提取可用作离子源光束中和应用的等离子体阴极中和器的电子束。

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