Abstract:
A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.
Abstract:
A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.
Abstract:
An acceleration sensor includes a semiconductor substrate, a first layer formed on the substrate, a first aperture within the first layer, and a beam coupled at a first end to the substrate and suspended above the first layer for a portion of the length thereof. The beam includes a first boss coupled to a lower surface thereof and suspended within the first aperture, and a second boss coupled to an upper surface of the second end of the beam. A second layer is positioned on the first layer over the beam and includes a second aperture within which the second boss is suspended by the beam. Contact surfaces are positioned within the apertures such that acceleration of the substrate exceeding a selected threshold in either direction along a selected axis will cause the beam to flex counter to the direction of acceleration and make contact through one of the bosses with one of the contact surfaces.
Abstract:
An inkjet nozzle assembly includes: a nozzle chamber having a nozzle opening and an ink inlet; and a thermal bend actuator for ejecting ink through the nozzle opening. The actuator includes: an active beam for connection to drive circuitry; a first passive beam fused to the active beam; and a second passive beam fused to the second first passive beam. The first passive beam is sandwiched between the active beam and the second passive beam such that when a current is passed through the active beam, the active beam expands relative to the passive beams, resulting in bending of the actuator and ejection of ink through the nozzle opening.
Abstract:
A semiconductor actuator includes a substrate base, a bending structure which is connected to the substrate base and can be deflected at least partially relative to the substrate base. The bending structure has semiconductor compounds on the basis of nitrides of main group III elements and at least two electrical supply contacts which impress an electrical current in or for applying an electrical voltage to the bending structure. At least two of the supply contacts are disposed at a spacing from each other respectively on the bending structure and/or integrated in the latter.
Abstract:
The MEMS switch comprises a substrate with signal-lines having fixed-contacts, a movable-plate with a movable-contact, a flexible support-member supporting the movable-plate, a static-actuator and a piezoelectric-actuator configured to contact the movable-contact with the fixed-contact. The movable-contact is provided at its longitudinal center with the movable-contact, and its both the longitudinal ends with static-movable-electrode-plate. The support-member is four strips disposed on portions outside of the both width ends of the movable plate. The strip extends along the longitudinal direction of the movable plate, provided with a first end fixed to the movable plate, and provided with a second end fixed to the substrate. The piezoelectric-element is disposed on an upper surface of the strip to be located at a portion outside of the width ends of the movable-plate. The piezoelectric-actuator is configured to develop the stress applied to the coupling-portion which is created between each the strip and the movable-plate.
Abstract:
A mechanical structure comprises an element which is moveable by nonmechanical means, such as heat or radiation, between a first state having a first shape and a second state having a second shape different. To this end, the element includes a layer of oriented polymerized liquid crystal which exhibits an anisotropic expansion when subjected to such means. In order to facilitate manufacture the element is positioned on a substrate which has a region of high adhesiveness and a region of low adhesiveness for polymerized liquid crystal. To manufacture such structures a layer of oriented polymerizable liquid crystal is formed on a substrate (201) which is provided with a patterned surface that provides adhesive regions (204) with high adhesiveness to polymerized liquid crystal and nonadhesive regions (203) with low adhesiveness to polymerized liquid crystal. After polymerization, for example a thermal shock is applied which causes the layer of polymerized liquid crystal to delaminate at the non-adhering region while remaining fixed to the adhesive regions. Thus, the method does not require time-consuming under-etching steps.
Abstract:
A method of making a Lateral-Moving Micromachined Thermal Bimorph which provides the capability of achieving in-plane thermally-induced motion on a microchip, as opposed to the much more common out-of-plane, or vertical, motion seen in many devices. The present invention employs a novel fabrication process to allow the fabrication of a lateral bimorph in a fundamentally planar set of processes. In addition, the invention incorporates special design features that allow the bimorph to maintain material interfaces.
Abstract:
A micro-electromechanical device includes a first piezoelectric actuator and a second piezoelectric actuator. The first piezoelectric actuator includes a first beam fixed on a substrate and a second beam extended in parallel to the first beam from a first connecting end to a first working end. A second piezoelectric actuator includes a third beam, spaced from the first beam, fixed on the substrate and a fourth beam extended in parallel to the third beam from a second connecting end to a second working end. The second working end faces the first working end in a perpendicular direction to a surface of the substrate.
Abstract:
A MEMS hysteretic thermal actuator may have a plurality of beams disposed over a heating element formed on the surface of the substrate. The plurality of beams may be coupled to a passive beam which is not disposed over the heating element. One of the plurality of beams may be formed in a first plane parallel to the substrate, whereas another of the plurality of beams may be formed in a second plane closer to the surface of the substrate. When the heating element is activated, it heats the plurality of beams such that they move the passive beam in a trajectory that is neither parallel to nor perpendicular to the surface of the substrate. When the beams are cooled, they may move in a different trajectory, approaching the substrate before moving laterally across it to their initial positions. By providing one electrical contact on the distal end of the passive beam and another stationary electrical contact on the substrate surface, the MEMS hysteretic actuator may form a reliable electrical switch that is relatively simple to manufacture and operate.