公开(公告)号：US08083953B2

公开(公告)日：2011-12-27

申请号：US11714336

申请日：2007-03-06

Applicant: Dan B. Millward ,  Eugene P. Marsh

Inventor： Dan B. Millward ,  Eugene P. Marsh

IPC: B44C1/22 ,  H01L21/302 ,  B82B3/00

CPC classification number: B81B1/00 ,  B81C1/00015 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  C08L2666/02

Abstract: Methods for fabricating sublithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multilayer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Abstract translation: 提供了使用自组装嵌段共聚物在表面上制备亚光刻纳米线性微通道阵列而不具有限定特征的方法，以及由这些方法形成的膜和器件。 该方法的实施方案使用多层诱导排序方法将层状膜与沟槽内的底层膜对准，并且进行局部加热以使覆盖在沟槽上的层状相嵌段共聚物膜退出，并在剩余表面上向外退火。

公开(公告)号：US08080615B2

公开(公告)日：2011-12-20

申请号：US11765232

申请日：2007-06-19

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: C08L71/02

CPC classification number: G03F7/40 ,  B32B3/10 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08G81/02 ,  G03F7/12

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract translation: 用于制造无规接枝PS-r-PEO共聚物的方法及其在制备亚光刻纳米级元素阵列的元件中作为中性润湿层的用途，包括使用自组装嵌段共聚物的开口和线性微通道，以及由这些方法形成的膜和器件 被提供。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

公开(公告)号：US20110177978A1

公开(公告)日：2011-07-21

申请号：US12888146

申请日：2010-09-22

Applicant: Dan Luo ,  Wenlong Cheng

Inventor： Dan Luo ,  Wenlong Cheng

IPC: C40B50/18 ,  B29C59/02 ,  C40B60/14

CPC classification number: B82Y40/00 ,  B81C99/0025 ,  B81C2201/0149 ,  B81C2201/0187 ,  B82Y30/00 ,  C07H21/00 ,  Y10S977/773 ,  Y10S977/774

Abstract: Apparatus and methods for forming self-assembly arrays of substances, such as nanoparticles, on a substrate are disclosed. The apparatus may include a substrate supporting a liquid composition including the substance and a solvent, and a removable micro-mold placed over the substrate and the liquid composition. To form the self assembly arrays of the substance, the solvent may be evaporated through at least one evaporation channel formed between the micro-mold and the substrate. The evaporation channel may be adjustable by subjecting the micro-mold to a positive pressure.

Abstract translation: 公开了用于在衬底上形成诸如纳米颗粒的物质自组装阵列的装置和方法。 该装置可以包括支撑包括物质和溶剂的液体组合物的基底和放置在基底和液体组合物上的可移除微型模具。 为了形成物质的自组装阵列，溶剂可以通过形成在微模和基底之间的至少一个蒸发通道蒸发。 可以通过使微型模具经受正压力来调节蒸发通道。

公开(公告)号：US07977177B2

公开(公告)日：2011-07-12

申请号：US12330898

申请日：2008-12-09

Applicant: Yonghan Roh ,  Kyoungseob Kim ,  Seokwon Jeong ,  Hyungjin Kim ,  Sungha Park

Inventor： Yonghan Roh ,  Kyoungseob Kim ,  Seokwon Jeong ,  Hyungjin Kim ,  Sungha Park

IPC: H01L21/336

CPC classification number: H01L21/32139 ,  B81C1/00396 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  H01L21/0332 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78

Abstract: Provided are methods of forming nano-devices. One of the methods includes forming a nano-scale self-assembly material layer on a substrate formed of at least one layer, forming a mask layer on the self-assembly material layer, performing a surface treatment process on the substrate using the mask layer as a mask, and removing the self-assembly material layer. Accordingly, it is possible to fabricate nano-devices through a nano-scale substrate patterning process, ion implantation process and etching process, without using a light source.

Abstract translation: 提供了形成纳米器件的方法。 其中一种方法包括在由至少一层形成的衬底上形成纳米级自组装材料层，在自组装材料层上形成掩模层，使用掩模层在衬底上进行表面处理工艺 掩模，并且去除自组装材料层。 因此，可以通过纳米级基板图案化工艺，离子注入工艺和蚀刻工艺制造纳米器件，而不使用光源。

公开(公告)号：US20110147983A1

公开(公告)日：2011-06-23

申请号：US12641959

申请日：2009-12-18

Applicant: Joy CHENG ,  William D. HINSBERG ,  Hiroshi ITO ,  Atsuko Ito ,  Ho-Cheol KIM ,  Young-Hye NA ,  Daniel P. SANDERS ,  Linda Karin SUNDBERG ,  Hoa D. TRUONG ,  Gregory Michael WALLRAFF

Inventor： Joy CHENG ,  William D. HINSBERG ,  Hiroshi ITO ,  Atsuko Ito ,  Ho-Cheol KIM ,  Young-Hye NA ,  Daniel P. SANDERS ,  Linda Karin SUNDBERG ,  Hoa D. TRUONG ,  Gregory Michael WALLRAFF

IPC: B28B1/14

CPC classification number: B82Y40/00 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0392 ,  G03F7/09 ,  G03F7/091 ,  G03F7/165 ,  G03F7/325 ,  G03F7/327 ,  G03F7/40

Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material comprises: disposing on a substrate a photoresist layer comprising a non-crosslinking photoresist; optionally baking the photoresist layer; pattern-wise exposing the photoresist layer to first radiation; optionally baking the exposed photoresist layer; and developing the exposed photoresist layer with a non-alkaline developer to form a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist; wherein the developed photoresist is not soluble in a given organic solvent suitable for casting a given material capable of self-assembly, and the developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the given material capable of self-assembly dissolved in the given organic solvent is casted on the patterned photoresist layer, and the given organic solvent is removed. The casted given material is allowed to self-assemble while optionally heating and/or annealing the casted given material, thereby forming the layered structure comprising the domain pattern of the self-assembled given material.

Abstract translation: 形成包括自组装材料的畴图案的层状结构的方法包括：在基底上设置包含非交联光致抗蚀剂的光致抗蚀剂层; 任选地烘烤光致抗蚀剂层; 将光致抗蚀剂层图案化地暴露于第一辐射; 任选地烘烤曝光的光致抗蚀剂层; 以及用非碱性显影剂显影曝光的光致抗蚀剂层以形成包含非交联显影光致抗蚀剂的负色图案光刻胶层; 其中显影的光致抗蚀剂不溶于适于铸造能够自组装的给定材料的给定有机溶剂中，并且显影的光致抗蚀剂可溶于碱性显影液和/或第二有机溶剂。 将包含溶解在给定有机溶剂中的能够自组装的给定材料的溶液浇铸在图案化的光致抗蚀剂层上，并且除去给定的有机溶剂。 铸造的给定材料允许自组装，同时任选地加热和/或退火铸造的给定材料，从而形成包括自组装给定材料的畴图案的分层结构。

公开(公告)号：US20110097559A1

公开(公告)日：2011-04-28

申请号：US12990941

申请日：2009-05-07

Applicant: Craig J. Hawker ,  Chuanbing Tang ,  Edward J. Kramer ,  Glenn Fredrickson

Inventor： Craig J. Hawker ,  Chuanbing Tang ,  Edward J. Kramer ,  Glenn Fredrickson

IPC: B32B3/30 ,  C08L53/00 ,  B29C41/12 ,  G03G13/14

CPC classification number: H01L21/0337 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08F293/005 ,  C08G83/008 ,  C08L53/00 ,  C08L2205/02 ,  Y10T428/24802 ,  C08L2666/24

Abstract: A polymeric composition and method of preparation for application in sub-micron lithography, comprising a blend of A-B and B′-C block, random, branched, or graft copolymers, where: (i) the B and B′ blocks or grafts have attractive supramolecular interactions characterized by a negative Flory-Huggins parameter; (ii) the composition exhibits a microphase-separated, three-domain morphology with A, C, and B/B′ domains comprised largely of A blocks or grafts, C blocks or grafts, and a mixture of B and B′ blocks or grafts, respectively. Long-range ordering of nanometer-scale domain features has been achieved in thin films of such supramolecular polymer blends, while avoiding macrophase separation. The strategy offers a diversity of morphologies for sub-micron lithographic applications in tandem with ease of chemical synthesis.

Abstract translation: 一种制备用于亚微米光刻的聚合物组合物和方法，其包含AB和B'-C嵌段，无规，支链或接枝共聚物的共混物，其中：（i）B和B'嵌段或接枝物具有吸引力 超分子相互作用以Flory-Huggins阴性参数为特征; （ii）组合物表现出微相分离的三结构域形态，其中主要由A嵌段或接枝物，C嵌段或接枝物组成的A，C和B / B'结构域以及B和B'嵌段或接枝物的混合物 ， 分别。 在这种超分子聚合物共混物的薄膜中已经实现了纳米尺度领域特征的长期排序，同时避免了巨噬细胞分离。 该策略为亚微米光刻应用提供了多种形态，并且易于化学合成。

公开(公告)号：US07846502B2

公开(公告)日：2010-12-07

申请号：US12482583

申请日：2009-06-11

Applicant: Ho-Cheol Kim ,  Charles T Rettner ,  Sang-Min Park

Inventor： Ho-Cheol Kim ,  Charles T Rettner ,  Sang-Min Park

IPC: B05D3/00

CPC classification number: B05D3/02 ,  B33Y80/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  H01L21/0337

Abstract: A method of controlling both alignment and registration (lateral position) of lamellae formed from self-assembly of block copolymers, the method comprising the steps of obtaining a substrate having an energetically neutral surface layer comprising a first topographic “phase pinning” pattern and a second topographic “guiding” pattern; obtaining a self-assembling di-block copolymer; coating the self-assembling di-block copolymer on the energetically neutral surface to obtain a coated substrate; and annealing the coated substrate to obtain micro-domains of the di-block copolymer.

Abstract translation: 一种控制由嵌段共聚物的自组装形成的薄片的对准和配准（横向位置）的方法，所述方法包括以下步骤：获得具有能量中性的表面层的基材，该基材包括第一形貌“相位钉扎”图案和第二 地形“导向”模式; 得到自组装二嵌段共聚物; 在能量中性表面上涂布自组装二嵌段共聚物以获得涂布的基材; 并对涂覆的基材进行退火以获得二嵌段共聚物的微畴。

公开(公告)号：US07828986B2

公开(公告)日：2010-11-09

申请号：US11926722

申请日：2007-10-29

Applicant: Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

Inventor： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

IPC: B44C1/22 ,  H01L21/302

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0271 ,  H01L21/0332

Abstract: A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first polymer includes polystyrene and the second polymer includes poly(ethylene oxide). A first layer including polydimethylglutarimide is adhered onto a surface of a substrate including a dielectric coated silicon wafer. A film is formed of the combination directly onto a surface of the first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film and the first layer are simultaneously etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. Portions of the film are removed. Features remain on the surface of the first layer.

Abstract translation: 一个方法。 提供了一种嵌段共聚物和另外的材料的组合。 共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 第一聚合物包括聚苯乙烯，第二聚合物包括聚（环氧乙烷）。 包括聚二甲基戊二酰亚胺的第一层粘附到包括电介质涂覆的硅晶片的基材的表面上。 该组合物直接由第一层的表面形成。 附加材料的纳米结构在第一聚合物嵌段内自组装。 同时蚀刻膜和第一层。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 部分电影被删除。 特征保留在第一层的表面上。

公开(公告)号：US20100279062A1

公开(公告)日：2010-11-04

申请号：US12834097

申请日：2010-07-12

Applicant: Dan B. Millward ,  Donald Westmoreland ,  Gurtej Sandhu

Inventor： Dan B. Millward ,  Donald Westmoreland ,  Gurtej Sandhu

IPC: B32B3/30

CPC classification number: H01J37/02 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  G03F7/0002 ,  G03F7/265 ,  Y10T428/24 ,  Y10T428/24149 ,  Y10T428/24174 ,  Y10T428/2438

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract translation: 提供了使用自组装嵌段共聚物制造包括开口和线性微通道的亚光刻纳米尺度微结构阵列的方法，以及由这些方法形成的膜和器件。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

公开(公告)号：US20100239819A1

公开(公告)日：2010-09-23

申请号：US12795318

申请日：2010-06-07

Applicant: Peng-Wei Chuang ,  Caroline A. Ross

Inventor： Peng-Wei Chuang ,  Caroline A. Ross

IPC: B32B3/28 ,  B32B3/10

CPC classification number: B81C1/00031 ,  B81C2201/0149 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  Y10T428/2457 ,  Y10T428/2462

Abstract: The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped grooves promote the formation of a face-centered cubic system (fcc) sphere array that is well ordered. In one embodiment, the (111) planes of the fcc sphere array are parallel to the angled side walls of the V-shaped groove. The (100) plane of the fcc sphere array is parallel to the top surface of the substrate, and may show a square symmetry among adjacent spheres. This square symmetry is unlike the hexagonal symmetry seen in monolayers of spherical domains and is a useful geometry for lithography applications, especially those used in semiconductor applications.

Abstract translation: 本发明涉及将球形形态嵌段共聚物自身组装成基材的V形槽。 虽然球形形态嵌段共聚物通常以体积形成体心立方体系（bcc）球阵列，但是V形槽促进形成良好排列的面心立方体（fcc）球阵列。 在一个实施例中，fcc球阵列的（111）面平行于V形槽的成角度的侧壁。 fcc球阵列的（100）平面平行于衬底的顶表面，并且可以在相邻球体之间显示正方形对称。 该方形对称性与在球形畴的单层中看到的六边形对称不同，并且是用于光刻应用的有用几何形状，特别是在半导体应用中使用的那些。