公开(公告)号：US11791131B2

公开(公告)日：2023-10-17

申请号：US17608651

申请日：2019-05-23

Applicant: Hitachi High-Tech Corporation

Inventor： Takashi Dobashi ,  Hirokazu Tamaki ,  Hiromi Mise ,  Shuntaro Ito

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/22 ,  H01J37/244 ,  H01J37/26 ,  H01J37/02

CPC classification number: H01J37/02 ,  H01J37/20 ,  H01J37/222 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/2802 ,  H01J2237/2817

Abstract: A charged particle beam apparatus includes a movement mechanism, a particle source, an optical element, a detector, and a control mechanism configured to control, based on an observation condition, the movement mechanism, the particle source, the optical element, and the detector. The control mechanism is configured to acquire a diffraction pattern image including a plurality of Kikuchi lines as a comparison image after inclining the movement mechanism by a first angle, evaluate an error between an inclination angle of the sample and a target inclination angle using a reference image of a reference diffraction pattern and the comparison image, and control inclination of the movement mechanism based on an evaluation result.

公开(公告)号：US11699582B2

公开(公告)日：2023-07-11

申请号：US17468478

申请日：2021-09-07

Applicant: Thermo Fisher Scientific (Bremen) GmbH ,  FEI Company

Inventor： Alexander Makarov ,  Wilko Balschun ,  Kyle Fort ,  Kun Liu

IPC: H01J37/02 ,  H01J49/06

CPC classification number: H01J49/063 ,  H01J37/02 ,  H01J2237/0216 ,  H01J2237/182

Abstract: A coupling for connecting together vacuum-based analytical systems requiring to be vibrationally isolated, comprising: a tubular connector having a longitudinal axis, the connector comprising a first end for connection to a first analytical system and a flexible portion reducing transmission of vibrations and permitting displacement of the first analytical system in a direction transverse to the longitudinal axis of the connector; and a seal longitudinally separated from the flexible portion, for vacuum sealing between the connector and a second analytical system; wherein the connector contains ion optics for transmitting ions between the first and second analytical systems.

公开(公告)号：US20180308657A1

公开(公告)日：2018-10-25

申请号：US16017329

申请日：2018-06-25

Applicant: Howmedica Osteonics Corp.

Inventor： Lewis Mullen ,  Joseph Robinson

IPC: H01J37/02 ,  H01J37/244

CPC classification number: H01J37/02 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/30477 ,  H01J2237/3114 ,  H01J2237/3128

Abstract: A high energy beam verification, calibration, and profiling system includes a conductive base plate, supports extending from the base plate, a plurality of conductors, a data logger electrically connected to the conductors, and a computer electrically connected to the data logger. Each conductor is supported by some of the supports such that each conductor is insulated from the conductive base plate. Each conductor has a profile intersecting with profiles of at least some of the other conductors to define a multidirectional and two-dimensional array of conductors. The data logger receives and records data associated with electrical charges flowing through the conductors. The computer is adapted to receive, manipulate, and display the data recorded by the data logger for comparison of beam characteristics at different locations across a high energy beam build area.

公开(公告)号：US10056223B2

公开(公告)日：2018-08-21

申请号：US13932151

申请日：2013-07-01

Applicant: Tokyo Electron Limted

Inventor： Nobuyuki Nagayama

IPC: H01J37/02 ,  H01J37/20 ,  C23C16/458 ,  H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01J37/02 ,  C23C16/4586 ,  H01J37/20 ,  H01J37/32155 ,  H01L21/67 ,  H01L21/6833 ,  H01L21/68785 ,  Y10T137/0324

Abstract: A plasma processing apparatus includes a lower electrode 12 on which a wafer W is provided. A second coolant path 70b is formed in a spiral shape in a region within the lower electrode 12 corresponding to where the wafer W is placed. Further, a first coolant path 70a is formed in a spiral shape to be located in a lower region within the lower electrode 12 corresponding to where the second coolant path 70b is formed. A pipeline 72 connected to a chiller unit 71 is branched into a first pipeline 72a connected to the first coolant path 70a and a second pipeline 72b connected to the second coolant path 70b. A check valve 90 allowing a coolant to flow in one direction is provided on the first pipeline 72a, and a reversing unit 92 reversing a flow direction of the coolant is provided on the pipeline 72.

公开(公告)号：US09953811B2

公开(公告)日：2018-04-24

申请号：US14325457

申请日：2014-07-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa

IPC: H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H01J37/02

CPC classification number: H01J37/32697 ,  H01J37/02 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32137 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/3341

Abstract: A plasma processing method for performing a plasma process on a processing target substrate is provided. The plasma processing method includes: segmenting a RF antenna into an inner coil, an intermediate coil, and an outer coil with gaps therebetween in a radial direction, respectively, the inner coil, the intermediate coil and the outer coil being electrically connected to one another in parallel between a first node and a second node; providing a variable intermediate capacitor and a variable outer capacitor between the first node and the second node, the variable intermediate capacitor being electrically connected in series to the intermediate coil, the variable outer capacitor being electrically connected in series to the outer coil, no reactance device being connected to the inner coil; and controlling plasma density distribution on the processing target substrate by selecting or variably adjusting electrostatic capacitances of the intermediate capacitor and the outer capacitor.

公开(公告)号：US20180044795A1

公开(公告)日：2018-02-15

申请号：US15794416

申请日：2017-10-26

Applicant: SCREEN Semiconductor Solutions Co., Ltd.

Inventor： Masahiko HARUMOTO ,  Tadashi MIYAGI ,  Yukihiko INAGAKI ,  Koji KANEYAMA

IPC: C23C16/56 ,  H01L21/033 ,  G03F7/32 ,  G03F7/20 ,  B05C11/00 ,  G03F7/30 ,  G03F7/16 ,  G03F7/00 ,  H01L21/67 ,  H01J37/02 ,  C23C16/02

CPC classification number: C23C16/56 ,  B05C11/00 ,  C23C16/0227 ,  G03F7/0002 ,  G03F7/162 ,  G03F7/20 ,  G03F7/3021 ,  G03F7/32 ,  H01J37/02 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/6715 ,  H01L21/67178

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

公开(公告)号：US09530615B2

公开(公告)日：2016-12-27

申请号：US13955852

申请日：2013-07-31

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Peter F. Kurunczi ,  Neil J. Bassom ,  Wilhelm P. Platow

IPC: H01J37/30 ,  H01J37/04 ,  B08B7/00 ,  H01J27/02 ,  H01J37/02 ,  H01J37/08

CPC classification number: H01J37/3002 ,  B08B7/0021 ,  H01J27/024 ,  H01J37/02 ,  H01J37/045 ,  H01J37/08 ,  H01J2237/022

Abstract: A system and method of improving the performance and extending the lifetime of an ion source is disclosed. The ion source includes an ion source chamber, a suppression electrode and a ground electrode. In the processing mode, the ion source chamber may be biased to a first positive voltage, while the suppression electrode is biased to a negative voltage to attract positive ions from within the chamber through an aperture and toward the workpiece. In the cleaning mode, the ion source chamber may be grounded, while the suppression electrode is biased using a power supply having a high current capability. The voltage applied to the suppression electrode creates a plasma between the suppression electrode and the ion source chamber, and between the suppression electrode and the ground electrode.

Abstract translation: 公开了改进离子源的性能和延长寿命的系统和方法。 离子源包括离子源室，抑制电极和接地电极。 在处理模式中，离子源室可以被偏置到第一正电压，而抑制电极被偏压到负电压，以通过孔径朝向工件吸引室内的正离子。 在清洁模式中，离子源室可以接地，而使用具有高电流能力的电源对抑制电极进行偏置。 施加到抑制电极的电压在抑制电极和离子源室之间以及在抑制电极和接地电极之间产生等离子体。

公开(公告)号：US09478387B2

公开(公告)日：2016-10-25

申请号：US14138166

申请日：2013-12-23

Applicant: Tokyo Electron Limited

Inventor： Yoshinobu Ooya ,  Akira Tanabe ,  Yoshinori Yasuta

IPC: H01L21/00 ,  H01J37/02 ,  H01J37/32

CPC classification number: H01J37/02 ,  H01J37/32091 ,  H01J37/32165 ,  H01J2237/3348

Abstract: A plasma processing apparatus capable of optimizing a plasma process is provided. The plasma processing apparatus includes a control unit for controlling a minimum energy and a maximum energy of ions incident onto a substrate independently of each other such that ion energy of the ions are concentrated at a first energy band and a second energy band respectively. In the plasma processing apparatus, the oxide film is etched to form a hole within the oxide film, the first energy band is lower than a first energy value at which the oxide film is etched while the organic film is not etched, and the second energy band is higher than a second energy value at which an etching yield at an inclined surface of the hole is higher than an etching yield of an upper surface of the organic film.

Abstract translation: 提供了能够优化等离子体处理的等离子体处理装置。 等离子体处理装置包括用于独立地控制入射到衬底上的离子的最小能量和最大能量的控制单元，使得离子的离子能量分别集中在第一能带和第二能带。 在等离子体处理装置中，蚀刻氧化膜以在氧化膜内形成空穴，第一能带低于蚀刻氧化膜的第一能量值，而有机膜未被蚀刻，第二能量 带高于第二能量值，在该第二能量值处，孔的倾斜表面处的蚀刻产率高于有机膜的上表面的蚀刻产率。

公开(公告)号：US20160124026A1

公开(公告)日：2016-05-05

申请号：US14932528

申请日：2015-11-04

Applicant: Howmedica Osteonics Corp.

Inventor： Lewis Mullen ,  Joseph Robinson

IPC: G01R19/00 ,  G01T1/29

CPC classification number: H01J37/02 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/30477 ,  H01J2237/3114 ,  H01J2237/3128

Abstract: A high energy beam verification, calibration, and profiling system includes a conductive base plate, supports extending from the base plate, a plurality of conductors, a data logger electrically connected to the conductors, and a computer electrically connected to the data logger. Each conductor is supported by some of the supports such that each conductor is insulated from the conductive base plate. Each conductor has a profile intersecting with profiles of at least some of the other conductors to define a multidirectional and two-dimensional array of conductors. The data logger receives and records data associated with electrical charges flowing through the conductors. The computer is adapted to receive, manipulate, and display the data recorded by the data logger for comparison of beam characteristics at different locations across a high energy beam build area.

Abstract translation: 高能量光束验证，校准和分析系统包括导电基板，从基板延伸的支撑件，多个导体，电连接到导体的数据记录器以及与数据记录器电连接的计算机。 每个导体由一些支撑件支撑，使得每个导体与导电基板绝缘。 每个导体具有与至少一些其它导体的轮廓相交的轮廓，以限定导体的多向和二维阵列。 数据记录器接收和记录与通过导体流动的电荷相关联的数据。 计算机适于接收，操纵和显示由数据记录器记录的数据，以便在高能束建立区域的不同位置处的波束特性进行比较。

公开(公告)号：US09190243B2

公开(公告)日：2015-11-17

申请号：US14012019

申请日：2013-08-28

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tatsuya Asahata ,  Hidekazu Suzuki ,  Shota Torikawa

IPC: H01J37/30 ,  H01J37/02 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/3005 ,  H01J37/02 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/20207 ,  H01J2237/28 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A composite charged particle beam apparatus includes a FIB column for irradiating a thin sample with a FIB and a GIB column for irradiating the thin sample with a GIB. The thin sample is placed on a sample stage, and a tilt unit tilts the thin sample about a tilt axis of the sample stage, the tilt axis being orthogonal to the FIB irradiation axis and being located inside a plane formed by the FIB irradiation axis and the GIB irradiation axis. A tilt sample holder is mounted on the sample stage and fixes the thin sample such that a cross-sectional surface of the thin sample is tilted at a constant angle with respect to the GIB irradiation axis and the azimuth angle of the GIB column can be changed by rotation of the sample stage.

Abstract translation: 复合带电粒子束装置包括用于用FIB照射薄样品的FIB柱和用于用GIB照射薄样品的GIB柱。 薄样品被放置在样品台上，并且倾斜单元围绕样品台的倾斜轴倾斜薄样品，倾斜轴正交于FIB照射轴并位于由FIB照射轴形成的平面内， GIB辐照轴。 将倾斜样品保持器安装在样品台上并固定薄样品，使得薄样品的横截面相对于GIB照射轴线以一定角度倾斜，并且可以改变GIB柱的方位角 通过样品台的旋转。