公开(公告)号：US20100284513A1

公开(公告)日：2010-11-11

申请号：US11514689

申请日：2006-09-01

Applicant: Kazuyasu Kawabe

Inventor： Kazuyasu Kawabe

IPC: G01T1/36

CPC classification number: H01J37/252 ,  G01N23/2252 ,  G21K1/06 ,  G21K2201/062 ,  G21K2201/064 ,  G21K2201/067 ,  H01J37/244 ,  H01J2237/24425

Abstract: An X-ray spectrometer which uses at least one curved analyzing crystal and which provides improved wavelength resolution of characteristic X-rays used for analysis and improved ratio of characteristic X-rays to background intensity by using only effective diffractive regions of the analyzing crystal. X-ray blocking plates upstand from an end of a crystal support member supporting the analyzing crystal in the direction of angular dispersion of the crystal toward the inside of a Rowland circle. Incident X-rays going from the point X-ray source toward the crystal and X-rays diffracted by the crystal toward an X-ray detector are partially blocked by the X-ray blocking plates. The shielded regions vary according to the incident angle θ of the incident X-rays. Optimum or nearly optimum effective regions of the surface of the crystal can be used at all times.

Abstract translation: 使用至少一个弯曲分析晶体的X射线光谱仪，其通过仅使用分析晶体的有效衍射区域提供用于分析的特征X射线的改进的波长分辨率和特征X射线与背景强度的比率。 X射线阻挡板从支撑分析晶体的晶体支撑构件的端部朝向Rowland圆的内部朝向晶体的角度分散方向立起。 从X射线源向晶体射出X射线，X射线检测器衍射的X射线被X射线阻挡板部分遮挡。 屏蔽区域根据入射角度而变化; 的事件X射线。 可以随时使用晶体表面的最佳或接近最佳的有效区域。

公开(公告)号：US20100221986A1

公开(公告)日：2010-09-02

申请号：US11989960

申请日：2006-08-03

Applicant: Yuzo Mori

Inventor： Yuzo Mori

IPC: B24B1/00

CPC classification number: G21K1/06 ,  B23H5/04 ,  B23H7/38 ,  B23K15/00 ,  B24B31/10 ,  B24C1/08 ,  G21K2201/064 ,  G21K2201/067 ,  Y10S451/908

Abstract: To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process. After the exposure of the workpiece in its working face to an electron beam to conduct modification so that the machining speed of the surface layer part in the working face is substantially even, ultraprecision smoothening is carried out by working process.

Abstract translation: 提供一种能够实现包括玻璃陶瓷材料在内的工件的超精密加工的电子束辅助EEM方法，其中在加工过程中以加工速度彼此不同的至少两种组分材料以精细混合状态存在，并且表面状态 不均匀，表面粗糙度为0.2〜0.05nm RMS。 EEM方法包括工作过程，其中允许工件和化学反应性微粒沿着工作面流动，以通过细颗粒与细颗粒之间的化学相互作用将微粒与化学键合的工作面上的原子除去 工作面界面。 工件包括以精加工的混合状态存在并且在加工过程中以加工速度彼此不同的至少两种组分材料。 在将工件的工作面暴露于电子束进行变形，使得工作面中的表层部的加工速度基本均匀的情况下，通过加工工序进行超精密平滑化。

公开(公告)号：USRE41220E1

公开(公告)日：2010-04-13

申请号：US11880425

申请日：2000-07-10

Applicant: Claude L. Davis Jr. ,  Kenneth E. Hrdina

Inventor： Claude L. Davis Jr. ,  Kenneth E. Hrdina

IPC: G21K1/06

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  C03B19/1415 ,  C03B2201/07 ,  C03B2201/42 ,  G02B5/0891 ,  G02B17/0615 ,  G02B17/0636 ,  G03F1/24 ,  G03F1/60 ,  G03F7/702 ,  G03F7/70233 ,  G03F7/70283 ,  G03F7/70891 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/064 ,  G21K2201/067

Abstract: The projection lithographic method for producing integrated circuits and forming patterns with extremely small feature dimensions includes an illumination sub-system (36) for producing and directing an extreme ultraviolet soft x-ray radiation λ from an extreme ultraviolet soft x-ray source (38); a mask stage (22) illuminated by the extreme ultraviolet soft x-ray radiation λ produced by illumination stage and the mask stage (22) includes a pattern when illuminated by radiation λ. A protection sub-system includes reflective multilayer coated Ti doped high purity SiO2 glass defect free surface (32) and printed media subject wafer which has a radiation sensitive surface.

Abstract translation: 用于制造集成电路和形成具有极小特征尺寸的图案的投影光刻方法包括用于产生和引导来自极紫外线软X射线源（38）的极紫外线软X射线辐射λ的照明子系统（36） ; 由照射级产生的极紫外线软X射线辐射λ照射的掩模台（22）和掩模台（22）包括当被辐射λ照射时的图案。 保护子系统包括具有辐射敏感表面的反射多层涂覆的Ti掺杂的高纯度SiO 2玻璃无缺陷表面（32）和印刷媒体对象晶片。

公开(公告)号：US07692171B2

公开(公告)日：2010-04-06

申请号：US11686900

申请日：2007-03-15

Applicant: Andrzei Kaszuba ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Tom K. Cho ,  Hichem M'Saad ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Thomas Nowak

Inventor： Andrzei Kaszuba ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Tom K. Cho ,  Hichem M'Saad ,  Scott A. Hendrickson ,  Dustin W. Ho ,  Thomas Nowak

IPC: H01J49/00 ,  H01J49/44

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067 ,  H01L21/67115

Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

Abstract translation: 本发明的实施方案一般涉及用于固化设置在基底上的介电材料的紫外（UV）固化室和使用UV辐射固化电介质材料的方法。 根据一个实施例的基板处理工具包括限定基板处理区域的主体; 衬底支撑件，适于支撑衬底处理区域内的衬底; 与衬底支撑件间隔开的紫外线辐射灯，所述灯被配置为将紫外线辐射透射到位于所述衬底支撑件上的衬底; 以及可操作地耦合以使所述紫外线辐射灯或衬底支撑体中的至少一个相对于彼此旋转至少180度的电动机。 衬底处理工具还可以包括一个或多个反射器，其适于在衬底上产生具有互补的高和低强度区域的紫外线辐射的泛化图案，其结合以在旋转时产生基本上均匀的辐照度图案。 还公开了其他实施例。

公开(公告)号：US20100039632A1

公开(公告)日：2010-02-18

申请号：US12540611

申请日：2009-08-13

Applicant: Maarten Marinus Johannes Wilhelmus VAN HERPEN ,  Vadim Yevgenyevich BANINE ,  Derk Jan Wilfred KLUNDER ,  Wouter Anthon SOER

Inventor： Maarten Marinus Johannes Wilhelmus VAN HERPEN ,  Vadim Yevgenyevich BANINE ,  Derk Jan Wilfred KLUNDER ,  Wouter Anthon SOER

IPC: G03F7/20 ,  G03B27/54 ,  G21K5/00 ,  B08B3/00

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70925 ,  G21K2201/064 ,  H05G2/005

Abstract: A lithographic apparatus includes a radiation source configured to produce extreme ultraviolet radiation. The source includes a chamber in which a plasma is generated, and a mirror configured to reflect radiation emitted by the plasma. The mirror includes a multi-layer structure that includes alternating Mo/Si layers. A boundary Mo layer or a boundary Si layer or a boundary diffusion barrier layer of the alternating layers forms a top layer of the mirror, the top layer facing inwardly with respect to the chamber. A hydrogen radical generator is configured to generate hydrogen radicals in the chamber. The radicals are configured to remove debris generated by the plasma from the mirror. A support is constructed and arranged to support a patterning device configured to pattern the radiation to form a patterned beam of radiation. A projection system is constructed and arranged to project the patterned beam of radiation onto a substrate.

Abstract translation: 光刻设备包括被配置为产生极紫外辐射的辐射源。 源包括其中产生等离子体的室和被配置为反射由等离子​​体发射的辐射的反射镜。 反射镜包括包含交替的Mo / Si层的多层结构。 交替层的边界Mo层或边界Si层或边界扩散阻挡层形成反射镜的顶层，顶层相对于室面向内。 氢游离基发生器构造成在腔室中产生氢自由基。 基团被配置成从反射镜去除由等离子体产生的碎屑。 支撑件被构造和布置成支撑配置成图案化辐射以形成图案化的辐射束的图案形成装置。 投影系统被构造和布置成将图案化的辐射束投射到衬底上。

公开(公告)号：US20090289205A1

公开(公告)日：2009-11-26

申请号：US12469140

申请日：2009-05-20

Applicant: Masato Moriya ,  Osamu Wakabayashi ,  Georg Soumagne

Inventor： Masato Moriya ,  Osamu Wakabayashi ,  Georg Soumagne

IPC: H05G2/00 ,  G02B5/08 ,  G03F7/20

CPC classification number: G02B5/1838 ,  G02B5/0891 ,  G02B5/1857 ,  G03F7/70575 ,  G21K1/065 ,  G21K2201/064

Abstract: The EUV light source device eliminates radiation other than EUV radiation from the light which it emits, and supplies only the EUV radiation to an exposure device. A composite layer consisting of a plurality of Mo/Si pair layers is provided upon the front surface of an EUV collector mirror, and blazed grooves are formed in this composite layer. Radiation emitted from a plasma is incident upon this EUV collector mirror, and is reflected or diffracted. The reflected EUV radiation (including diffracted EUV) proceeds towards an intermediate focal point IF. The radiation of other wavelengths proceeds towards some position other than this focal point IF, because its reflection angle or diffraction angle is different. A SPF shield having an aperture portion is provided at the focal point IF. Accordingly, only the EUV radiation passes through the aperture portion and is supplied to the exposure device, while the other radiation is intercepted by the shield.

Abstract translation: EUV光源装置除去其发射的光之外的EUV辐射以外的辐射，并且仅将EUV辐射提供给曝光装置。 在EUV收集镜的前表面上设置由多个Mo / Si对层构成的复合层，在该复合层中形成闪耀槽。 从等离子体发射的辐射入射到该EUV收集镜上，并被反射或衍射。 反射的EUV辐射（包括衍射的EUV）进行到中间焦点IF。 由于其反射角或衍射角不同，其他波长的辐射进入除了该焦点IF之外的某个位置。 具有开口部分的SPF屏蔽设置在焦点IF处。 因此，只有EUV辐射通过开口部分并被提供给曝光装置，而另一辐射被屏蔽件遮挡。

公开(公告)号：US07583787B2

公开(公告)日：2009-09-01

申请号：US11928676

申请日：2007-10-30

Applicant: Albrecht Frey ,  Norbert Pailer ,  Jess Koehler

Inventor： Albrecht Frey ,  Norbert Pailer ,  Jess Koehler

IPC: G21K7/00

CPC classification number: G21K1/06 ,  G21K2201/064 ,  G21K2201/067

Abstract: A device for improving resolution capability of an x-ray optical apparatus for an x-ray incident from a direction of incidence includes a mirror element including a mirror edge formed as a cylindrical shell section around an edge axis. The mirror element is spaced apart, in a radial direction, from a focal axis that is parallel to the direction of incidence. The edge axis is oriented at a first non-zero angle relative to the focal axis when viewed along a radial axis. The edge axis is oriented at a second non-zero angle relative to the focal axis.

Abstract translation: 用于提高从入射方向入射的x射线的X射线光学装置的分辨能力的装置包括：镜子元件，其包括形成为围绕边缘轴线的圆筒形壳体部分的镜面边缘。 反射镜元件在径向方向上与平行于入射方向的焦点轴线间隔开。 当沿着径向轴线观察时，边缘轴线相对于焦轴以第一非零角度定向。 边缘轴线相对于焦点轴线定向成第二非零角度。

公开(公告)号：US20090147922A1

公开(公告)日：2009-06-11

申请号：US11952498

申请日：2007-12-07

Applicant: Forrest Frank Hopkins ,  Susanne Madeline Lee ,  Peter Michael Edic

Inventor： Forrest Frank Hopkins ,  Susanne Madeline Lee ,  Peter Michael Edic

IPC: H01J35/18 ,  G21K3/00

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G21K1/10 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067 ,  H01J35/16 ,  H01J2235/183

Abstract: A multi-energy imaging system and method for selectively generating high-energy X-rays and low-energy X-ray beams are described. A pair of optic devices are used, one optic device being formed to emit high X-ray energies and the other optic device being formed to emit low X-ray energies. A selective filtering mechanism is used to filter the high X-ray energies from the low X-ray energies. The optic devices have at least a first solid phase layer having a first index of refraction with a first photon transmission property and a second solid phase layer having a second index of refraction with a second photon transmission property. The first and second layers are conformal to each other.

Abstract translation: 描述了用于选择性地生成高能量X射线和低能量X射线束的多能量成像系统和方法。 使用一对光学器件，一个光学器件形成为发射高X射线能量，另一个光学器件形成为发射低X射线能量。 选择性过滤机制用于从低X射线能量过滤高X射线能量。 光学器件具有至少第一固相层，其具有第一光子透射特性的第一折射率和具有第二光子透射特性的第二折射率的第二固相层。 第一层和第二层彼此共形。

公开(公告)号：US07508912B2

公开(公告)日：2009-03-24

申请号：US11693900

申请日：2007-03-30

Applicant: Zhong Zhong ,  Jonathan Hanson ,  Jerome Hastings ,  Chi-Chang Kao ,  Anthony Lenhard ,  David Peter Siddons ,  Hui Zhong

Inventor： Zhong Zhong ,  Jonathan Hanson ,  Jerome Hastings ,  Chi-Chang Kao ,  Anthony Lenhard ,  David Peter Siddons ,  Hui Zhong

IPC: G21K1/06

CPC classification number: G21K1/06 ,  G21K2201/062 ,  G21K2201/064

Abstract: An x-ray focusing device generally includes a slide pivotable about a pivot point defined at a forward end thereof, a rail unit fixed with respect to the pivotable slide, a forward crystal for focusing x-rays disposed at the forward end of the pivotable slide and a rearward crystal for focusing x-rays movably coupled to the pivotable slide and the fixed rail unit at a distance rearward from the forward crystal. The forward and rearward crystals define reciprocal angles of incidence with respect to the pivot point, wherein pivoting of the slide about the pivot point changes the incidence angles of the forward and rearward crystals while simultaneously changing the distance between the forward and rearward crystals.

Abstract translation: X射线聚焦装置通常包括可围绕限定在其前端处的枢转点枢转的滑块，相对于可枢转滑动件固定的轨道单元，用于聚焦设置在可枢转滑动件的前端的x射线的前方晶体 以及用于将与前方晶体后方距离可移动地联接到可枢转滑动件和固定轨道单元的X射线聚焦的后方晶体。 向前和向后的晶体限定了相对于枢转点的入射角，其中滑动件围绕枢转点的枢转改变了前后晶体的入射角，同时改变了前后晶体之间的距离。

公开(公告)号：US07479645B2

公开(公告)日：2009-01-20

申请号：US11459142

申请日：2006-07-21

Applicant: Hironobu Yabuta ,  Taku Sumitomo

Inventor： Hironobu Yabuta ,  Taku Sumitomo

IPC: G01N21/33 ,  G01N21/00 ,  H05G2/00

CPC classification number: H05G2/003 ,  B82Y10/00 ,  G21K2201/061 ,  G21K2201/064 ,  H05G2/005

Abstract: An extreme UV radiation producing device in which adhesion of solid tin in the vacuum pump of an evacuation device is restricted, so that the maintenance period and the replacement period of the pump is prolonged is achieved by the provision of a treatment unit between a radiation source chamber and the evacuation device. The treatment device has a hydrogen radical producing part in which tin and/or a tin compound in the evacuated gas from the radiation source chamber is/are made into a tin hydride; and a heat treatment part in which the tin hydride is thermally decomposed and in which the tin produced liquefied and separated from the evacuated gas. The liquid tin is fed into a collecting/storage vessel and the evacuated gas from which the tin and/or a tin compound has been removed fed to the evacuation device.

Abstract translation: 一种极端的UV辐射产生装置，其中固体锡在抽真空装置的真空泵中的粘附受到限制，从而通过在辐射源之间提供处理单元来实现泵的维持期和更换周期的延长 室和撤离装置。 处理装置具有氢原子产生部，其中来自辐射源室的真空气体中的锡和/或锡化合物被制成氢化锡; 以及热处理部，其中，所述锡氢化物被热分解，并且所述锡产生液化并从所述抽真空气体中分离。 将液体锡进料到收集/储存容器中，并且已经从其中除去锡和/或锡化合物的抽空气体进料到抽空装置。