公开(公告)号：US20150151958A1

公开(公告)日：2015-06-04

申请号：US14411537

申请日：2013-06-29

Applicant: CSM TECHNOLOGIES FAB1 CO., LTD.

Inventor： Dan Dai ,  Xinwei Zhang ,  Guoping Zhou ,  Changfeng Xia

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00825 ,  B81B7/0029 ,  B81C1/0038 ,  B81C2201/0167 ,  B81C2201/053

Abstract: A MEMS chip (100) includes a silicon substrate layer (110), a first oxidation layer (120) and a first thin film layer (130). The silicon substrate layer includes a front surface (112) for a MEMS process and a rear surface (114), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.

Abstract translation: MEMS芯片（100）包括硅衬底层（110），第一氧化层（120）和第一薄膜层（130）。 硅衬底层包括用于MEMS工艺的前表面（112）和后表面（114），前表面和后表面都是​​抛光表面。 第一氧化层主要由二氧化硅制成，并形成在硅衬底层的后表面上。 第一薄膜层主要由氮化硅制成，并且形成在第一氧化层的表面上。 在上述MEMS芯片中，通过在硅衬底层的后表面依次层叠第一氧化层和第一薄膜层，有效地保护后表面以防止在MEMS工艺过程中的划痕损伤。 还提供了一种用于MEMS芯片的制造方法。

公开(公告)号：US08865497B2

公开(公告)日：2014-10-21

申请号：US12973422

申请日：2010-12-20

Applicant: George A. Dunbar, III ,  Zhong-Xiang He ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper

Inventor： George A. Dunbar, III ,  Zhong-Xiang He ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper

IPC: H01L29/84 ,  B81C1/00 ,  B81B3/00 ,  G06F17/50 ,  H01H57/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires from the lower wiring layer. The method further includes forming an electrode beam over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition.

Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括在基板上形成下布线层。 该方法还包括从下布线层形成多条分立布线。 该方法还包括在多个离散导线上形成电极束。 形成电极束和多个离散导线中的至少一个形成有最小化后续硅沉积中的小丘和三点的布局。

公开(公告)号：US08525389B2

公开(公告)日：2013-09-03

申请号：US12943269

申请日：2010-11-10

Applicant: Tzung-Han Tan ,  Bang-Chiang Lan ,  Ming-I Wang ,  Chien-Hsin Huang ,  Meng-Jia Lin

Inventor： Tzung-Han Tan ,  Bang-Chiang Lan ,  Ming-I Wang ,  Chien-Hsin Huang ,  Meng-Jia Lin

IPC: H01L41/08 ,  H01L27/20

CPC classification number: B81C1/00246 ,  B81B3/0072 ,  B81B2203/04 ,  B81B2207/015 ,  B81C2201/0167

Abstract: A microelectromechanical system (MEMS) device and a method for fabricating the same are described. The MEMS device includes a first electrode and a second electrode. The first electrode is disposed on a substrate, and includes at least two metal layers, a first protection ring and a dielectric layer. The first protection ring connects two adjacent metal layers, so as to define an enclosed space between two adjacent metal layers. The dielectric layer is disposed in the enclosed space and connects two adjacent metal layers. The second electrode is disposed on the first electrode, wherein a cavity is formed between the first electrode and the second electrode.

Abstract translation: 描述了微机电系统（MEMS）装置及其制造方法。 MEMS器件包括第一电极和第二电极。 第一电极设置在基板上，并且包括至少两个金属层，第一保护环和介电层。 第一保护环连接两个相邻的金属层，以便限定两个相邻金属层之间的封闭空间。 电介质层设置在封闭空间中并连接两个相邻的金属层。 第二电极设置在第一电极上，其中在第一电极和第二电极之间形成空腔。

公开(公告)号：US08513042B2

公开(公告)日：2013-08-20

申请号：US13320579

申请日：2010-06-15

Applicant: Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

Inventor： Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L21/00

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Abstract translation: 一种形成机电换能器装置的方法包括在固定结构上形成机电换能器装置的可移动结构和致动结构，其中可移动结构被布置成在机电换能器装置的操作中相对于固定结构可移动 响应致动结构的致动。 该方法还包括在提供应力修剪层之后，在可移动结构的至少一部分上提供应力修剪层，将可移动结构从固定结构释放以提供释放的机电换能器装置，以及在释放可移动结构之后，改变应力 释放的机电换能器装置的应力修剪层，使得当机电换能器装置处于关闭状态时，可移动结构相对于固定结构偏转预定量。

公开(公告)号：US20120224981A1

公开(公告)日：2012-09-06

申请号：US13508650

申请日：2010-11-12

Applicant: Yves Fouillet ,  Francois Baleras ,  Martine Cochet ,  Sandrine Maubert

Inventor： Yves Fouillet ,  Francois Baleras ,  Martine Cochet ,  Sandrine Maubert

IPC: F04B45/04 ,  B23P17/00

CPC classification number: F04B43/046 ,  A61M5/14586 ,  B81B2201/036 ,  B81B2203/0127 ,  B81C1/00182 ,  B81C2201/0167 ,  B81C2201/019 ,  F04B43/02 ,  F04B43/043 ,  F05C2203/02 ,  F05C2203/06 ,  Y10T29/494

Abstract: A method for producing at least one deformable membrane micropump including a first substrate and a second substrate assembled together, the first substrate including at least one cavity and the second substrate including at least one deformable membrane arranged facing the cavity. In the method: the cavity is produced in the first substrate; then the first and second substrates are assembled together; then the deformable membrane is produced in the second substrate.

Abstract translation: 一种用于生产包括组装在一起的第一基底和第二基底的至少一个可变形微囊的方法，所述第一基底包括至少一个空腔，所述第二基底包括面向腔体的至少一个可变形膜。 在该方法中：在第一衬底中产生空腔; 然后将第一和第二基板组装在一起; 则在第二基板中产生可变形膜。

公开(公告)号：US20120133006A1

公开(公告)日：2012-05-31

申请号：US12955220

申请日：2010-11-29

Applicant: Joseph P. Hasselbach ,  Karen L. Lestage ,  Anthony K. Stamper

Inventor： Joseph P. Hasselbach ,  Karen L. Lestage ,  Anthony K. Stamper

IPC: H01L29/84

CPC classification number: H01G5/18 ,  B81B3/0072 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01G5/16

Abstract: In one embodiment, a semiconductor structure includes a beam positioned within a sealed cavity, the beam including: an upper insulator layer including one or more layers; and a lower insulator layer including one or more layers, wherein a composite stress of the upper insulator layer is different than a composite stress of the lower insulator layer, such that the beam bends.

Abstract translation: 在一个实施例中，半导体结构包括位于密封空腔内的光束，所述光束包括：包括一层或多层的上绝缘体层; 以及包括一层或多层的下绝缘体层，其中上绝缘体层的复合应力不同于下绝缘体层的复合应力，使得光束弯曲。

公开(公告)号：US20120122259A1

公开(公告)日：2012-05-17

申请号：US13356447

申请日：2012-01-23

Applicant: Ming-Hau Tung ,  Lior Kogut

Inventor： Ming-Hau Tung ,  Lior Kogut

IPC: H01L21/02

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和装置。 一种制造光调制装置的方法包括提供衬底，在衬底的至少一部分上形成牺牲层，在牺牲层的至少一部分上形成反射层，以及在衬底上形成一个或多个弯曲控制器 所述挠曲控制器被配置为可操作地支撑所述反射层并且在去除所述牺牲层时形成可能与所述牺牲层的厚度相差的深度的空腔，其中所述深度垂直于所述基板测量。

公开(公告)号：US20120056308A1

公开(公告)日：2012-03-08

申请号：US13320579

申请日：2010-06-15

Applicant: Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

Inventor： Francois Perruchot ,  Lianjun Liu ,  Sergio Pacheco ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L29/66 ,  H01L21/66

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0167 ,  B81C2201/0169

Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Abstract translation: 一种形成机电换能器装置的方法包括在固定结构上形成机电换能器装置的可移动结构和致动结构，其中可移动结构被布置成在机电换能器装置的操作中相对于固定结构可移动 响应致动结构的致动。 该方法还包括在提供应力修剪层之后，在可移动结构的至少一部分上提供应力修剪层，将可移动结构从固定结构释放以提供释放的机电换能器装置，以及在释放可移动结构之后，改变应力 释放的机电换能器装置的应力修剪层，使得当机电换能器装置处于关闭状态时，可移动结构相对于固定结构偏转预定量。

公开(公告)号：US20110318861A1

公开(公告)日：2011-12-29

申请号：US12973285

申请日：2010-12-20

Applicant: Christopher V. JAHNES ,  Anthony K. STAMPER

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: H01L21/02 ,  G06F17/50

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a lower wiring layer. The method further includes forming a layer. The method further includes forming a second sacrificial cavity layer over the first sacrificial layer and in contact with the layer. The method further includes forming a lid on the second sacrificial cavity layer. The method further includes forming at least one vent hole in the lid, exposing a portion of the second sacrificial cavity layer. The method further includes venting or stripping the second sacrificial cavity layer such that a top surface of the second sacrificial cavity layer is no longer touching a bottom surface of the lid, before venting or stripping the first sacrificial cavity layer thereby forming a first cavity and second cavity, respectively.

Abstract translation: 形成至少一个微机电系统（MEMS）腔的方法包括在下布线层上形成第一牺牲腔层。 该方法还包括形成层。 该方法还包括在第一牺牲层上形成与层接触的第二牺牲腔层。 该方法还包括在第二牺牲腔层上形成盖子。 该方法还包括在盖中形成至少一个通气孔，暴露第二牺牲腔层的一部分。 该方法还包括排气或剥离第二牺牲腔层，使得第二牺牲腔层的顶表面在不排除或剥离第一牺牲腔层之前不再接触盖的底表面，从而形成第一腔和第二腔 腔。

公开(公告)号：US20110316098A1

公开(公告)日：2011-12-29

申请号：US12973333

申请日：2010-12-20

Applicant: George A. DUNBAR, III ,  Jeffrey C. MALING ,  William J. MURPHY ,  Anthony K. STAMPER

Inventor： George A. DUNBAR, III ,  Jeffrey C. MALING ,  William J. MURPHY ,  Anthony K. STAMPER

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower sacrificial material used to form a lower cavity. The method further includes forming a cavity via connecting the lower cavity to an upper cavity. The cavity via is formed with a top view profile of rounded or chamfered edges. The method further includes forming an upper sacrificial material within and above the cavity via, which has a resultant surface based on the profile of the cavity via. The upper cavity is formed with a lid that is devoid of structures that would interfere with a MEMS beam, including: depositing a lid material on the resultant surface of the upper sacrificial material; and venting the upper sacrificial material to form the upper cavity such the lid material forms the lid which conforms with the resultant surface of the upper sacrificial material.

Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括形成用于形成下腔的较低牺牲材料。 该方法还包括通过将下腔体连接到上部空腔来形成空腔。 空腔通孔形成有圆形或倒角边缘的顶视图。 该方法还包括在空腔内部和上方形成上部牺牲材料，其具有基于空腔通路的轮廓的合成表面。 上空腔形成有没有会干扰MEMS梁的结构的盖，包括：在上牺牲材料的所得表面上沉积盖材料; 并且排出上部牺牲材料以形成上部空腔，使得盖子材料形成与上部牺牲材料的合成表面一致的盖子。