公开(公告)号：US08057690B2

公开(公告)日：2011-11-15

申请号：US12401850

申请日：2009-03-11

Applicant: Lianzhong Yu

Inventor： Lianzhong Yu

IPC: C03C15/00

CPC classification number: B81C1/00182 ,  B81B2201/0235

Abstract: Methods for creating at least one micro-electromechanical (MEMS) structure in a silicon-on-insulator (SOI) wafer. The SOI wafer with an extra layer of oxide is etched according to a predefined pattern. A layer of oxide is deposited over exposed surfaces. An etchant selectively removes the oxide to expose the SOI wafer substrate. A portion of the SOI substrate under at least one MEMS structure is removed, thereby releasing the MEMS structure to be used in the formation of an accelerometer.

Abstract translation: 在绝缘体上硅（SOI）晶片中产生至少一个微机电（MEMS）结构的方法。 根据预定图案蚀刻具有多余氧化层的SOI晶片。 一层氧化物沉积在暴露的表面上。 蚀刻剂选择性地去除氧化物以暴露SOI晶片衬底。 去除在至少一个MEMS结构下的SOI衬底的一部分，从而释放用于形成加速度计的MEMS结构。

公开(公告)号：US08039911B2

公开(公告)日：2011-10-18

申请号：US12485696

申请日：2009-06-16

Applicant: Goro Nakatani ,  Mizuho Okada ,  Nobuhisa Yamashita

Inventor： Goro Nakatani ,  Mizuho Okada ,  Nobuhisa Yamashita

IPC: H01L29/84 ,  H01L21/00 ,  H04R19/04

CPC classification number: G01P15/125 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2203/0118 ,  G01P15/0802 ,  H04R7/16 ,  H04R19/005 ,  H04R19/04

Abstract: The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)≧1  (1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure.

Abstract translation: 根据本发明的MEMS传感器包括隔膜。 在隔膜中，由分别连接支撑部和主体部的中心的两条直线形成的角度分别设定为满足下式（1）的关系：（A2 / A1）/（B2 / B1） ≧1（1）A2：在隔膜A1上施加规定值的物理量的情况下的隔膜的最大振动振幅：在省略膜片的物理量的情况下的隔膜的最大振动振幅 从隔膜B2省略支撑部分中的一个所获得的结构：在加工隔膜B1上的物理量的情况下在隔膜中产生的最大应力：在隔膜上施加物理量的情况下在隔膜中引起的最大应力 在省略的结构。

公开(公告)号：US20110219877A1

公开(公告)日：2011-09-15

申请号：US13057045

申请日：2009-08-03

Applicant: Daniel Christoph Meisel

Inventor： Daniel Christoph Meisel

IPC: G01P15/125

CPC classification number: G01P15/125 ,  B81B3/0086 ,  B81B2201/0235

Abstract: A micromechanical sensor having at least one movably mounted measuring element which is opposite at least one stationary electrode, the electrode being situated in a first plane, and being contacted by at least one printed conductor track which is situated in a second plane. A third plane is located between the first plane and the second plane, the third plane including an electrically conductive material.

Abstract translation: 一种微机械传感器，其具有至少一个可移动地安装的测量元件，其与至少一个固定电极相对，所述电极位于第一平面中，并且被位于第二平面中的至少一个印刷导体轨道接触。 第三平面位于第一平面和第二平面之间，第三平面包括导电材料。

公开(公告)号：US20110175177A1

公开(公告)日：2011-07-21

申请号：US12759845

申请日：2010-04-14

Applicant: Tsyr-Shyang Liou

Inventor： Tsyr-Shyang Liou

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00246 ,  B81B2201/0235 ,  B81C2203/0109 ,  B81C2203/0742

Abstract: A method of fabricating a microelectromechanical system (MEMS) device includes providing a semiconductor substrate having a semiconductor layer and an interconnect structure. A passivation layer and a photoresist layer are formed over the interconnect structure and a plurality of openings are formed in the photoresist layer to expose portions of the passivation layer. The passivation layer exposed by the openings and the interconnect structure thereunder are removed, forming a plurality of first trenches. The semiconductor layer exposed by the first trenches is removed, forming a plurality of second trenches in the semiconductor layer. An upper capping substrate is provided over the passivation layer, forming a first composite substrate. The semiconductor layer in the first composite substrate is thinned and portions of the thinned semiconductor layer are etched to form a third trench, wherein a suspended micromachined structure is formed in a region between the first, second and third trenches.

Abstract translation: 制造微机电系统（MEMS）器件的方法包括提供具有半导体层和互连结构的半导体衬底。 在互连结构上形成钝化层和光致抗蚀剂层，并且在光致抗蚀剂层中形成多个开口以暴露钝化层的部分。 去除由开口暴露的钝化层及其下面的互连结构，形成多个第一沟槽。 去除由第一沟槽露出的半导体层，在半导体层中形成多个第二沟槽。 在所述钝化层上方设置上盖基板，形成第一复合基板。 第一复合衬底中的半导体层变薄，并且减薄半导体层的部分被蚀刻以形成第三沟槽，其中在第一，第二和第三沟槽之间的区域中形成悬浮的微加工结构。

公开(公告)号：US07972888B1

公开(公告)日：2011-07-05

申请号：US12813503

申请日：2010-06-10

Applicant: Gang Li ,  Wei Hu

Inventor： Gang Li ,  Wei Hu

IPC: H01L21/00

CPC classification number: G01L9/0042 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/0376 ,  B81C1/00182 ,  B81C2201/0132 ,  B81C2201/0177 ,  B81C2203/0118 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

Abstract: A method for manufacturing a MEMS sensor and its thin film and cantilever beam includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an outer epitaxial growth process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.

Abstract translation: MEMS传感器及其薄膜和悬臂梁的制造方法包括以下步骤：将沉积工艺，外部外延生长工艺，湿蚀刻工艺和背蚀刻工艺结合在一起蚀刻单晶硅晶片的顶表面 以形成压敏单晶硅膜，悬臂梁，质量块，前室，后室和连接前室和后室的沟槽。 防止单晶硅膜蚀刻，从而可以良好地控制其厚度。 本发明的方法可以用于代替从硅晶片的底表面形成后室和压敏单晶硅膜的传统方法。

公开(公告)号：US20110126632A1

公开(公告)日：2011-06-02

申请号：US12627679

申请日：2009-11-30

Applicant: Andrew C. McNeil ,  Yizhen Lin ,  Woo Tae Park

Inventor： Andrew C. McNeil ,  Yizhen Lin ,  Woo Tae Park

IPC: G01L9/12 ,  B23P17/04

CPC classification number: G01L19/0092 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  G01L9/0047 ,  G01L9/0073 ,  G01L19/0618 ,  G01P15/125 ,  G01P2015/0837 ,  G01P2015/088 ,  Y10T29/49002

Abstract: A microelectromechanical systems (MEMS) sensor device (20) includes a substrate (22) having sensors (24, 26) disposed on the same side (28) of the substrate (22) and laterally spaced apart from one another. The sensor (26) includes a sense element (56), and the substrate (22) includes a cavity (58) extending through the substrate (22) from the backside (30) of the substrate (22) to expose the sense element (56) to an external environment (54).The sense element (56) is movable in response to a stimulus (52) from the environment (54) due to its exposure to the environment (54) via the cavity (58). Fabrication methodology (66) entails concurrently forming the sensors (24, 26) on substrate (22) by implementing MEMS process flow, followed by creating the cavity (58) through the substrate (22) to expose the sense element (56) to the environment (54).

Abstract translation: 微机电系统（MEMS）传感器装置（20）包括具有设置在基板（22）的同一侧（28）上并且彼此横向间隔开的传感器（24,26）的基板（22）。 传感器（26）包括感测元件（56），并且衬底（22）包括从衬底（22）的背面（30）延伸穿过衬底（22）的空腔（58），以暴露感测元件 56）到外部环境（54）。 响应于来自环境（54）的刺激（52），感测元件（56）由于经由空腔（58）暴露于环境（54）而是可移动的。 制造方法（66）需要通过实施MEMS工艺流程同时在衬底（22）上形成传感器（24,26），随后通过衬底（22）产生空腔（58），以将感测元件（56）暴露于 环境（54）。

公开(公告)号：US20110109327A1

公开(公告)日：2011-05-12

申请号：US12925067

申请日：2010-10-12

Applicant: Axel Franke ,  Alexander Buhmann ,  Marian Keck

Inventor： Axel Franke ,  Alexander Buhmann ,  Marian Keck

IPC: G01R27/26

CPC classification number: G01C19/5755 ,  B81B3/0086 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0136 ,  G01D5/24 ,  G01P15/125 ,  G01P2015/0814

Abstract: A sensor for capacitive detection of a mechanical deflection includes a substrate having a first substrate electrode and a second substrate electrode; and a mass movable relative to the substrate. The mass is divided into: a first electrically separate region having a first ground electrode; and a second electrically separate region of the mass having a second ground electrode. At least one portion of the first ground electrode is situated in a first region between the first substrate electrode and the second substrate electrode, and forms a first differential capacitor. At least one portion of the second ground electrode is situated in a second region between the first substrate electrode and the second substrate electrode, and forms a second differential capacitor.

Abstract translation: 用于电容式检测机械偏转的传感器包括具有第一基板电极和第二基板电极的基板; 以及相对于基板移动的质量。 质量分为：具有第一接地电极的第一电分离区域; 以及具有第二接地电极的所述质量体的第二电分离区域。 第一接地电极的至少一部分位于第一基板电极和第二基板电极之间的第一区域中，并且形成第一差分电容器。 第二接地电极的至少一部分位于第一基板电极和第二基板电极之间的第二区域中，并形成第二差分电容器。

公开(公告)号：US07939937B2

公开(公告)日：2011-05-10

申请号：US12226999

申请日：2007-03-21

Applicant: Martin Holzmann ,  Frieder Haag ,  Michael Knauss ,  Florian Grabmaier

Inventor： Martin Holzmann ,  Frieder Haag ,  Michael Knauss ,  Florian Grabmaier

IPC: H01L23/12

CPC classification number: B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/053

Abstract: A premold housing for accommodating a chip structure includes a first part of the housing which is connected to the chip structure as well as connected in an elastically deflectable manner to an additional part of the housing which is fastened to the support structure bearing the entire housing. A mechanism is provided for damping the deflection of the first part of the housing which is connected to the chip structure.

Abstract translation: 用于容纳芯片结构的预制外壳包括壳体的第一部分，其连接到芯片结构，并且以可弹性偏转的方式连接到紧固到支撑整个壳体的支撑结构的外壳的附加部分。 提供了一种用于阻尼壳体的连接到芯片结构的第一部分的偏转的机构。

公开(公告)号：US20110103622A1

公开(公告)日：2011-05-05

申请号：US12981949

申请日：2010-12-30

Applicant: Jason W. Weigold

Inventor： Jason W. Weigold

IPC: H04R11/04

CPC classification number: H04R3/00 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81C1/00182 ,  H01L2224/48137 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/15151 ,  H04R19/005 ,  H04R2499/11

Abstract: A microphone includes a diaphragm assembly supported by a substrate. The diaphragm assembly includes at least one carrier, a diaphragm, and at least one spring coupling the diaphragm to the at least one carrier such that the diaphragm is spaced from the at least one carrier. An insulator (or separate insulators) between the substrate and the at least one carrier electrically isolates the diaphragm and the substrate.

Abstract translation: 麦克风包括由基板支撑的隔膜组件。 隔膜组件包括至少一个载体，隔膜和至少一个弹簧，其将隔膜耦合到至少一个载体，使得隔膜与至少一个载体间隔开。 衬底和至少一个载体之间的绝缘体（或单独的绝缘体）电隔离隔膜和衬底。

公开(公告)号：US07906822B2

公开(公告)日：2011-03-15

申请号：US12164670

申请日：2008-06-30

Applicant: Yoshihiro Mizuno ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi

Inventor： Yoshihiro Mizuno ,  Norinao Kouma ,  Hisao Okuda ,  Hiromitsu Soneda ,  Tsuyoshi Matsumoto ,  Osamu Tsuboi

IPC: H01L29/84

CPC classification number: H01L23/055 ,  B81B7/0038 ,  B81B2201/0235 ,  G01P1/023 ,  G01P15/0802 ,  H01L23/564 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/484 ,  H01L2224/49175 ,  H01L2224/73257 ,  H01L2224/8192 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/10161 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16195 ,  H01L2924/06 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A packaged device includes a package having an inner surface defining a closed internal space, a device chip fixed to the package in the internal space, and a parylene film covering at least a part of the inner surface of the package and/or at least a part of a surface of the device chip.

Abstract translation: 封装装置包括具有限定封闭内部空间的内表面的封装，固定在内部空间中的封装的器件芯片和覆盖封装的内表面的至少一部分的聚对二甲苯膜和/或至少一个 器件芯片表面的一部分。