公开(公告)号：US20110156176A1

公开(公告)日：2011-06-30

申请号：US12969821

申请日：2010-12-16

Applicant: James Richard Huckabee ,  Ray H. Purdom

Inventor： James Richard Huckabee ,  Ray H. Purdom

IPC: H01L29/66 ,  H01L21/02

CPC classification number: B81C1/00261 ,  B81B3/0081 ,  B81B7/0061 ,  B81B2201/0257 ,  B81B2201/0264 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A low-cost micro-electro-mechanical system (MEMS) has a mass-produced carrier fabricated as a pre-molded leadframe so that the space of the leadframe center is filled with compound and a two-tier recess is created in the center. The first tier is filled by an inset with a first perforation and a second perforation. An integrated circuit chip with an opening and a membrane at the end of the opening, operable as a pressure sensor, microphone, speaker, etc, is assembled on the inset so that the opening is aligned with the first perforation. The chip is protected by a cover transected by a vent aligned with the second inset perforation. An air channel can then reach from the ambient through the vent and the second perforation to the second tier recess, which connects to the first perforation and the chip opening to the membrane.

Abstract translation: 低成本的微机电系统（MEMS）具有作为预成型引线框制造的大量生产的载体，使得引线框架中心的空间填充有复合物，并且在中心形成两层凹槽。 第一层由具有第一穿孔和第二穿孔的插入物填充。 在开口端部的具有开口的膜和可操作为压力传感器，麦克风，扬声器等的膜的集成电路芯片组装在插图上，使得开口与第一穿孔对准。 芯片由与第二插入孔对准的通气孔横切的盖保护。 空气通道然后可以从环境通过排气口和第二穿孔到达第二层凹槽，其连接到第一穿孔和到膜的开口。

公开(公告)号：US20110073969A1

公开(公告)日：2011-03-31

申请号：US12893340

申请日：2010-09-29

Applicant: Hubert Benzel ,  Roland Guenschel

Inventor： Hubert Benzel ,  Roland Guenschel

IPC: H01L29/84 ,  H01L21/50

CPC classification number: B81B7/007 ,  B81B2201/0264 ,  B81B2207/096 ,  G01L9/0042 ,  G01L9/0045 ,  G01L9/0054 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: An assembly and connection technology for a sensor system, including a sensor element having circuit elements integrated into the top side and a carrier for the sensor element, which is simple and robust and which does not require any further packaging measures for protecting the circuit elements and electrical terminals of the sensor elements after the isolation of the sensor elements. For this purpose, the carrier is provided with through contacts. In addition, the sensor element is installed in flip-chip technology on the carrier, so that the top side of the sensor element is at least regionally capped by the carrier and the circuit elements of the sensor element can be electrically contacted from the rear side of the carrier via the through contacts.

Abstract translation: 一种用于传感器系统的组装和连接技术，其包括具有集成在顶侧中的电路元件的传感器元件和用于传感器元件的载体，该传感器元件简单且牢固，并且不需要任何进一步的包装措施来保护电路元件和 传感器元件的电气端子隔离传感器元件后。 为此目的，通过触点提供载体。 此外，传感器元件以倒装芯片技术安装在载体上，使得传感器元件的顶侧至少被载体区域地覆盖，并且传感器元件的电路元件可以从后侧电接触 的载体通过通孔。

公开(公告)号：US20100219490A1

公开(公告)日：2010-09-02

申请号：US12712756

申请日：2010-02-25

Applicant: Yoshitaka Adachi ,  Katsuyuki Inoue

Inventor： Yoshitaka Adachi ,  Katsuyuki Inoue

IPC: H01L29/84 ,  H01L21/02

CPC classification number: G01L9/0042 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L9/0048 ,  G01L9/0054

Abstract: A semiconductor sensor has a first semiconductor layer as a base, an insulating layer formed on the first semiconductor layer, and a second semiconductor layer formed on the insulating layer. A recess is formed from a bottom surface of the first semiconductor layer up to a top surface of the insulating layer. The second semiconductor layer is covered with the insulating layer in an outer circumference of a top surface of the recess. A sensitive region of the second semiconductor layer is exposed in a region except the outer circumference of the top surface of the recess.

Abstract translation: 半导体传感器具有作为基底的第一半导体层，形成在第一半导体层上的绝缘层和形成在绝缘层上的第二半导体层。 从第一半导体层的底表面到绝缘层的顶表面形成凹部。 第二半导体层在凹部的顶表面的外圆周上被绝缘层覆盖。 第二半导体层的敏感区域在凹部的顶面的外周以外的区域露出。

公开(公告)号：US20100176469A1

公开(公告)日：2010-07-15

申请号：US12451315

申请日：2008-05-26

Applicant: Peter Schmollngruber ,  Hans Artmann ,  Thomas Wagner

Inventor： Peter Schmollngruber ,  Hans Artmann ,  Thomas Wagner

IPC: H01L29/84 ,  H01L21/302

CPC classification number: B81B7/0006 ,  B81B2201/0264 ,  B81B2203/0127 ,  H01L21/76898 ,  H01L23/481 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A micromechanical component includes a substrate that has a front side and a backside, the front side having a functional pattern, which functional pattern is electrically contacted to the backside in a contact region. The substrate has at least one contact hole in the contact region, which extends into the substrate, starting from the backside.

Abstract translation: 微机械部件包括具有前侧和后侧的基板，前侧具有功能图案，该功能图案在接触区域中电接触背面。 衬底在接触区域中具有至少一个接触孔，其从背面开始延伸到衬底中。

公开(公告)号：US07723232B2

公开(公告)日：2010-05-25

申请号：US11171939

申请日：2005-06-30

Applicant: Timothy John Legat ,  Alexander Noam Teutsch ,  Ross Elliot Teggatz ,  Thomas Richard Maher

Inventor： Timothy John Legat ,  Alexander Noam Teutsch ,  Ross Elliot Teggatz ,  Thomas Richard Maher

IPC: H01L21/302

CPC classification number: B81C1/00158 ,  B81B2201/0264 ,  G01L9/0042

Abstract: The formation of a semiconductor sensing device is disclosed, where the device can be used to sense pressure, for example. The device is formed by etching the entire backside of a semiconductor substrate or wafer. This streamlines the fabrication process by omitting a number of steps that would otherwise be required to selectively etch certain locations of the substrate. This also improves device performance and compactness by allowing associated support circuitry to be formed closer to a sensing region, and more particularly piezoelectric elements of the sensing region.

Abstract translation: 公开了半导体感测装置的形成，其中例如可以使用该装置感测压力。 该器件通过蚀刻半导体衬底或晶片的整个背面而形成。 这通过省略了选择性地蚀刻衬底的某些位置所需要的许多步骤来简化制造工艺。 这还通过允许相关联的支持电路形成为更接近感测区域，更具体地，感测区域的压电元件，来提高设备性能和紧凑性。

公开(公告)号：US07622782B2

公开(公告)日：2009-11-24

申请号：US11210309

申请日：2005-08-24

Applicant: Stanley Chu ,  Sisira Kankanam Gamage ,  Hyon-Jin Kwon

Inventor： Stanley Chu ,  Sisira Kankanam Gamage ,  Hyon-Jin Kwon

IPC: H01L29/84

CPC classification number: G01L9/0054 ,  B81B2201/0264 ,  B81C3/001 ,  B81C2203/0109 ,  B81C2203/036 ,  G01L9/0042 ,  Y10S257/909 ,  Y10S438/909

Abstract: A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion positioned over the cavity, wherein the cavity is open to an environment to be sensed. The chamber is hermetically sealed from the environment.

Abstract translation: 一种压力传感器包括：基底基底硅融合到盖基底上，其中腔室设置在基底基底和盖基片之间。 基底基板和盖基板中的每一个包括硅。 底部基底包括限定空腔的壁和位于空腔上方的隔膜部分，其中空腔对待感测的环境开放。 该室与环境密封。

公开(公告)号：US07579663B2

公开(公告)日：2009-08-25

申请号：US12028841

申请日：2008-02-11

Applicant: Chang-Feng Wan

Inventor： Chang-Feng Wan

IPC: H01L29/78

CPC classification number: G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/0384 ,  B81B2207/07 ,  B81C1/00095 ,  B81C1/00285 ,  B81C1/00333 ,  B81C2201/019 ,  H01G5/16 ,  H01G5/40 ,  H01L29/82

Abstract: A system and method for manufacturing micro cavity packaging enclosure at the wafer level using MEMS (MicroElectroMechanical Systems) process, wherein micro cavities are formed from epoxy-bonded single-crystalline silicon wafer as its cap, epoxy and deposited metal or insulator as at least part of its sidewall, on substrate wafers.

Abstract translation: 一种用于使用MEMS（微电子机械系统）工艺在晶片级制造微腔封装外壳的系统和方法，其中微腔由环氧键合单晶硅晶片作为其盖，环氧树脂和沉积的金属或绝缘体形成为至少部分 的侧壁。

公开(公告)号：US20090146227A1

公开(公告)日：2009-06-11

申请号：US12277329

申请日：2008-11-25

Applicant: Yasushi Igarashi

Inventor： Yasushi Igarashi

IPC: H01L29/84

CPC classification number: G01P15/125 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/092 ,  B81C1/00301 ,  G01P1/023 ,  G01P2015/0828

Abstract: A capacitive sensor according to the present invention includes a semiconductor substrate, a fixed electrode serving as a first electrode formed on a surface of or in the semiconductor substrate, a structure formed on the semiconductor substrate to have a vibratable second electrode that is formed to be spaced from and opposed to the semiconductor substrate and from the fixed electrode serving as the first electrode, a sealing member serving as a first sealing member formed on the semiconductor substrate to be spaced from the structure, to cover the structure, and to have a through hole serving as a first through hole, and a movable electrode serving as a vibratable third electrode formed on the sealing member to block up the through hole, and to be spaced from and opposed to the movable electrode.

Abstract translation: 根据本发明的电容传感器包括半导体衬底，用作形成在半导体衬底的表面上或半导体衬底中的第一电极的固定电极，形成在半导体衬底上的结构，以具有形成为可振动的第二电极 与半导体衬底间隔开并相对于第一电极的固定电极，用作第一密封构件的密封构件形成在半导体衬底上以与结构隔开以覆盖结构，并且具有通孔 以及用作可振动的第三电极的可动电极，形成在密封构件上以阻挡通孔，并与可动电极间隔开并与之相对。

公开(公告)号：US07539003B2

公开(公告)日：2009-05-26

申请号：US11707347

申请日：2007-02-16

Applicant: Curtis A. Ray ,  Janusz Bryzek

Inventor： Curtis A. Ray ,  Janusz Bryzek

IPC: H01G7/00

CPC classification number: G01L9/0073 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0814 ,  G01P2015/0831 ,  G01P2015/084 ,  H01L28/40

Abstract: The devices presented herein are capacitive sensors with single crystal silicon on all key stress points. Isolating trenches are formed by trench and refill forming dielectrically isolated conductive silicon electrodes for drive, sense and guards. For pressure sensing devices according to the invention, the pressure port is opposed to the electrical wire bond pads for ease of packaging. Dual-axis accelerometers measuring in plane acceleration and out of plane acceleration are also described. A third axis in plane is easy to achieve by duplicating and rotating the accelerometer 90 degrees about its out of plane axis Creating resonant structures, angular rate sensors, bolometers, and many other structures are possible with this process technology. Key advantages are hermeticity, vertical vias, vertical and horizontal gap capability, single crystal materials, wafer level packaging, small size, high performance and low cost.

Abstract translation: 本文提出的器件是在所有关键应力点上具有单晶硅的电容式传感器。 隔离沟槽由沟槽和替代填充形成介电隔离的导电硅电极形成，用于驱动，感测和保护。 对于根据本发明的压力感测装置，为了便于包装，压力端口与电线接合焊盘相对。 还描述了在平面加速度和平面外加速度测量的双轴加速度计。 通过将加速度计重复和旋转90度绕平面轴，平面中的第三轴容易实现。使用该工艺技术，可以创建谐振结构，角速率传感器，测辐射热计和许多其他结构。 主要优点是气密性，垂直通孔，垂直和水平间隙能力，单晶材料，晶圆级封装，体积小，性能高，成本低。

公开(公告)号：US20090117364A1

公开(公告)日：2009-05-07

申请号：US12265177

申请日：2008-11-05

Applicant: Kaoru Tsuchiya ,  Takafumi Mizoguchi

Inventor： Kaoru Tsuchiya ,  Takafumi Mizoguchi

IPC: B32B3/26 ,  H01L21/311

CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0315 ,  Y10S977/724 ,  Y10S977/732 ,  Y10S977/733 ,  Y10T428/249953

Abstract: The present invention improves mechanical strength of a micro-electro-mechanical device (MEMS) having a movable portion to improve reliability. In a micro-electro-mechanical device (MEMS) having a movable portion, a portion which has been a hollow portion in the case of a conventional structure is filled with a filler material. As the filler material, a block copolymer that is highly flexible is used, for example. By filling the hollow portion, mechanical strength improves. Besides, warpage of an upper portion of a structure body in the manufacture process is prevented, whereby yield improves. A micro-electro-mechanical device thus manufactured is highly reliable.

Abstract translation: 本发明提高了具有可移动部分的微机电装置（MEMS）的机械强度，以提高可靠性。 在具有可移动部分的微机电装置（MEMS）中，在常规结构的情况下已经是中空部分的部分填充有填充材料。 作为填充材料，例如使用高度柔性的嵌段共聚物。 通过填充中空部分，机械强度提高。 此外，防止了制造过程中的结构体的上部的翘曲，从而产率提高。 这样制造的微机电装置是高度可靠的。