公开(公告)号：US08085458B2

公开(公告)日：2011-12-27

申请号：US12614311

申请日：2009-11-06

Applicant: Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

Inventor： Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

IPC: G02B26/00 ,  H01L21/44

CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/047 ,  B81C1/00793 ,  B81C2201/0167

Abstract: Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.

Abstract translation: 这里描述的是在MEMS器件中在金属层之间使用扩散阻挡层。 扩散阻挡层防止两种金属的混合，这可以改变期望的物理特性并使加工变得复杂。 在一个示例中，扩散阻挡层可以用作干涉式调制器中的可移动反射结构的一部分。

公开(公告)号：US07704773B2

公开(公告)日：2010-04-27

申请号：US11506600

申请日：2006-08-18

Applicant: Lior Kogut ,  Chengbin Qiu ,  Chun-Ming Wang ,  Stephen Zee ,  Fan Zhong

Inventor： Lior Kogut ,  Chengbin Qiu ,  Chun-Ming Wang ,  Stephen Zee ,  Fan Zhong

IPC: H01L21/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

Abstract translation: MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。

公开(公告)号：US07630114B2

公开(公告)日：2009-12-08

申请号：US11261236

申请日：2005-10-28

Applicant: Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

Inventor： Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

IPC: G02B26/00

CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/047 ,  B81C1/00793 ,  B81C2201/0167

Abstract: Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.

Abstract translation: 这里描述的是在MEMS器件中在金属层之间使用扩散阻挡层。 扩散阻挡层防止两种金属的混合，这可以改变期望的物理特性并使加工变得复杂。 在一个示例中，扩散阻挡层可以用作干涉式调制器中的可移动反射结构的一部分。

公开(公告)号：US07563720B2

公开(公告)日：2009-07-21

申请号：US11781470

申请日：2007-07-23

Applicant: James F. Detry

Inventor： James F. Detry

IPC: H01L21/311

CPC classification number: B81C1/00595 ,  B81C1/00365 ,  B81C2201/0136 ,  B81C2201/0167 ,  B81C2203/031

Abstract: A wafer for use in a MEMS device having two doped layers surrounding an undoped layer of silicon is described. By providing two doped layers around an undoped core, the stress in the lattice structure of the silicon is reduced as compared to a solidly doped layer. Thus, problems associated with warping and bowing are reduced. The wafer may have a pattered oxide layer to pattern the deep reactive ion etch. A first deep reactive ion etch creates trenches in the layers. The walls of the trenches are doped with boron atoms. A second deep reactive ion etch removes the bottom walls of the trenches. The wafer is separated from the silicon substrate and bonded to at least one glass wafer.

Abstract translation: 描述了一种用于具有围绕未掺杂硅层的两个掺杂层的MEMS器件的晶片。 通过在未掺杂的芯周围提供两个掺杂层，与固体掺杂层相比，硅的晶格结构中的应力降低。 因此，与翘曲和弯曲相关的问题减少。 晶片可以具有图案化的氧化物层以对深层反应离子蚀刻进行图案化。 第一深反应离子蚀刻在层中产生沟槽。 沟槽的壁掺杂有硼原子。 第二次深反应离子蚀刻去除沟槽的底壁。 将晶片与硅衬底分离并结合至至少一个玻璃晶片。

公开(公告)号：US07505245B2

公开(公告)日：2009-03-17

申请号：US11226248

申请日：2005-09-15

Applicant: Kenichi Yokoyama

Inventor： Kenichi Yokoyama

IPC: H01G7/00

CPC classification number: B81C1/00952 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81C2201/0167 ,  H01L31/18

Abstract: A method for manufacturing a semiconductor physical quantity sensor including a support substrate, a movable electrode, a fixed electrode is provided. The method includes the steps of: preparing a multi-layered substrate; forming a compression stress layer on a part of a surface of the semiconductor layer; forming a trench in the semiconductor layer; and releasing the movable electrode from the substrate by removing the insulation film. In the step of releasing, the part of the semiconductor layer, on which the compression stress layer is disposed, is cambered by the compression stress toward a direction apart from the substrate.

Abstract translation: 提供一种制造包括支撑基板，可动电极，固定电极的半导体物理量传感器的方法。 该方法包括以下步骤：制备多层基板; 在所述半导体层的表面的一部分上形成压应力层; 在半导体层中形成沟槽; 并且通过去除绝缘膜从基板释放可动电极。 在释放的步骤中，其上设置有压缩应力层的半导体层的部分通过压缩应力朝离开基板的方向弯曲。

公开(公告)号：US20090029048A1

公开(公告)日：2009-01-29

申请号：US12247215

申请日：2008-10-07

Applicant: Jyh-Chen Chen ,  Gwo-Jiun Sheu

Inventor： Jyh-Chen Chen ,  Gwo-Jiun Sheu

IPC: C23C16/44 ,  B05D1/36

CPC classification number: C23C16/30 ,  B81B3/0072 ,  B81C2201/0167 ,  C23C14/06 ,  G01K5/62 ,  G01K5/68 ,  Y10T428/12493 ,  Y10T428/125 ,  Y10T428/12528 ,  Y10T428/12535

Abstract: A method of thermal stress compensation includes providing a substrate. A first film is then formed on the substrate. Thereafter, a second film is also formed on the substrate. The second film has a negative coefficient of thermal expansion.

Abstract translation: 热应力补偿的方法包括提供衬底。 然后在基板上形成第一膜。 此后，在基板上也形成第二膜。 第二片具有负的热膨胀系数。

公开(公告)号：US20090026559A1

公开(公告)日：2009-01-29

申请号：US11781470

申请日：2007-07-23

Applicant: James F. Detry

Inventor： James F. Detry

IPC: H01L29/84 ,  H01L21/20

CPC classification number: B81C1/00595 ,  B81C1/00365 ,  B81C2201/0136 ,  B81C2201/0167 ,  B81C2203/031

Abstract: A wafer for use in a MEMS device having two doped layers surrounding an undoped layer of silicon is described. By providing two doped layers around an undoped core, the stress in the lattice structure of the silicon is reduced as compared to a solidly doped layer. Thus, problems associated with warping and bowing are reduced. The wafer may have a pattered oxide layer to pattern the deep reactive ion etch. A first deep reactive ion etch creates trenches in the layers. The walls of the trenches are doped with boron atoms. A second deep reactive ion etch removes the bottom walls of the trenches. The wafer is separated from the silicon substrate and bonded to at least one glass wafer.

Abstract translation: 描述了一种用于具有围绕未掺杂硅层的两个掺杂层的MEMS器件的晶片。 通过在未掺杂的芯周围提供两个掺杂层，与固体掺杂层相比，硅的晶格结构中的应力降低。 因此，与翘曲和弯曲相关的问题减少。 晶片可以具有图案化的氧化物层以对深层反应离子蚀刻进行图案化。 第一深反应离子蚀刻在层中产生沟槽。 沟槽的壁掺杂有硼原子。 第二次深反应离子蚀刻去除沟槽的底壁。 将晶片与硅衬底分离并结合至至少一个玻璃晶片。

公开(公告)号：US07420264B2

公开(公告)日：2008-09-02

申请号：US11400301

申请日：2006-04-07

Applicant: Michael Goldstein

Inventor： Michael Goldstein

IPC: H01L23/58

CPC classification number: B81C1/00666 ,  B81B2201/042 ,  B81C2201/0167 ,  G02B5/0833 ,  G02B26/0833 ,  Y10S438/954

Abstract: An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).

公开(公告)号：US07192800B2

公开(公告)日：2007-03-20

申请号：US10952757

申请日：2004-09-30

Applicant: Jidong Hou

Inventor： Jidong Hou

IPC: H01L21/302

CPC classification number: B81B3/0072 ,  B81C2201/0167

Abstract: A method to change the profile of released membranes is disclosed. This method is to form an island structure at certain regions of membranes. Membranes comprise one or several layers of different materials, and at least one layer has intrinsic or residual stress. The profile of membrane will change from being flat to curved at the region of island structure when membranes are released from sacrificial layers.

Abstract translation: 公开了改变释放膜的轮廓的方法。 该方法是在膜的某些区域形成岛状结构。 膜包含一层或多层不同的材料，至少有一层具有固有或残余应力。 当膜从牺牲层释放时，膜的轮廓将在岛结构的区域从平坦变化到弯曲。

公开(公告)号：US20060175203A1

公开(公告)日：2006-08-10

申请号：US10548277

申请日：2004-03-08

Applicant: Timothy Davis ,  Breet Sexton

Inventor： Timothy Davis ,  Breet Sexton

IPC: H01R13/02 ,  C25D5/10

CPC classification number: B81C1/00666 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C2201/0167 ,  C25D5/12 ,  H01H2059/0081 ,  H05K3/4092 ,  H05K2201/0311 ,  H05K2201/0338 ,  H05K2201/0397 ,  H05K2203/0726

Abstract: Curved out of plane metal components are formed on PCB substrates (11) by electroplating two layers (13, 14) of the same metal such that each layer has a different internal stress. This produces as curvature of the layer (13, 14) which enables coils, curved cantilever beams and springs to be fabricated. The amplitude and direction of curvature can be controlled by controlling the stress and thickness of each layer. The stress is controlled by controlling the composition of the electroplating bath.

Abstract translation: 通过对相同金属的两层（13,14）进行电镀，使得每个层具有不同的内部应力，在PCB基板（11）上形成平面金属部件的弯曲。 这产生了能够制造线圈，弯曲悬臂梁和弹簧的层（13,14）的曲率。 可以通过控制各层的应力和厚度来控制曲率的振幅和方向。 通过控制电镀浴的组成来控制应力。