INTEGRATED MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) SENSOR DEVICE
    261.
    发明申请
    INTEGRATED MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) SENSOR DEVICE 有权
    集成微电子机械系统(MEMS)传感器设备

    公开(公告)号:US20100312468A1

    公开(公告)日:2010-12-09

    申请号:US12477667

    申请日:2009-06-03

    CPC classification number: B81B7/02 B81B2201/0242 B81B2201/0292

    Abstract: An integrated sensor device is provided. The integrated sensor device comprises a first substrate including a surface portion and a second substrate coupled to the surface portion of the first substrate in a stacked configuration, wherein a cavity is defined between the first substrate and the second substrate. The integrated sensor device also comprises one or more micro-electro-mechanical systems (MEMS) sensors located at least partially in the first substrate, wherein the MEMS sensor communicates with the cavity. The integrated sensor device further comprises one or more additional sensors.

    Abstract translation: 提供集成的传感器装置。 集成传感器装置包括第一衬底,第一衬底包括表面部分和第二衬底,第二衬底以堆叠构型耦合到第一衬底的表面部分,其中在第一衬底和第二衬底之间限定空腔。 集成传感器装置还包括至少部分地位于第一衬底中的一个或多个微电机械系统(MEMS)传感器,其中MEMS传感器与空腔连通。 集成传感器装置还包括一个或多个附加传感器。

    Piezo-TFT cantilever MEMS fabrication
    262.
    发明授权
    Piezo-TFT cantilever MEMS fabrication 有权
    压电薄膜悬臂MEMS制造

    公开(公告)号:US07785912B2

    公开(公告)日:2010-08-31

    申请号:US11818716

    申请日:2007-06-15

    Abstract: A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.

    Abstract translation: 提供了压电TFT悬臂微机电系统(MEMS)及相关制造工艺。 该方法包括:提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上,至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。 在一个示例中,在衬底上形成薄膜包括:选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。 薄膜悬臂梁由第一和第二层形成,而TFT源极/漏极(S / D)和沟道区域由第一有源Si区形成。

    PATTERNING METHODS FOR STRETCHABLE STRUCTURES
    263.
    发明申请
    PATTERNING METHODS FOR STRETCHABLE STRUCTURES 有权
    适应性强的结构方法

    公开(公告)号:US20100143848A1

    公开(公告)日:2010-06-10

    申请号:US12331131

    申请日:2008-12-09

    Abstract: Described herein are processing techniques for fabrication of stretchable and/or flexible electronic devices using laser ablation patterning methods. The laser ablation patterning methods utilized herein allow for efficient manufacture of large area (e.g., up to 1 mm2 or greater or 1 m2 or greater) stretchable and/or flexible electronic devices, for example manufacturing methods permitting a reduced number of steps. The techniques described herein further provide for improved heterogeneous integration of components within an electronic device, for example components having improved alignment and/or relative positioning within an electronic device. Also described herein are flexible and/or stretchable electronic devices, such as interconnects, sensors and actuators.

    Abstract translation: 这里描述了使用激光烧蚀图案化方法制造可拉伸和/或柔性电子器件的处理技术。 本文使用的激光烧蚀图案化方法允许有效地制造大面积(例如,高达1mm 2或更大或1m 2或更大)的可拉伸和/或柔性电子器件,例如允许减少步数的制造方法。 本文描述的技术进一步提供了改进的电子设备内的组件的异构集成,例如具有电子设备内的改进的对准和/或相对定位的组件。 本文还描述了柔性和/或可拉伸的电子设备,例如互连,传感器和致动器。

    THERMAL FLUID FLOW SENSOR AND METHOD OF MANUFACTURING THE SAME
    264.
    发明申请
    THERMAL FLUID FLOW SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
    热流体传感器及其制造方法

    公开(公告)号:US20100139391A1

    公开(公告)日:2010-06-10

    申请号:US12633142

    申请日:2009-12-08

    Inventor: Noriyuki SAKUMA

    Abstract: A thermal fluid flow sensor having a diaphragm structure body configured by an insulating film formed by stacking a film having compressive stress and a film having tensile stress on the top and bottom of a temperature-measuring resistive element and a heater resistive element which are processed by microprocessing is provided. The insulating film at a lower layer of the heater resistive element, a temperature-measuring resistive element for heater resistive element, upstream temperature-measuring resistive elements, and downstream temperature-measuring resistive elements, has films having compressive stress (a first insulating film, a third insulating film, and a fifth insulating film) and films having tensile stress (a second insulating film and a fourth insulating film) being alternately arranged, and two layers or more of the films having tensile stress are arranged.

    Abstract translation: 一种热流体流量传感器,具有膜结构体,该隔膜结构体由绝缘膜构成,该绝缘膜通过在温度测量电阻元件和加热器电阻元件的顶部和底部堆叠具有压应力的膜和具有拉伸应力的膜而形成, 提供微处理。 加热电阻元件下层的绝缘膜,加热电阻元件的温度测量电阻元件,上游测温电阻元件和下游温度测量电阻元件具有压应力的膜(第一绝缘膜, 第三绝缘膜和第五绝缘膜)和具有拉伸应力的膜(第二绝缘膜和第四绝缘膜)交替布置,并且布置有两层或更多层的具有拉伸应力的膜。

    SENSOR CHIP AND SUBSTRATE ASSEMBLY FOR MEMS DEVICE
    267.
    发明申请
    SENSOR CHIP AND SUBSTRATE ASSEMBLY FOR MEMS DEVICE 审中-公开
    用于MEMS器件的传感器芯片和基板组件

    公开(公告)号:US20080230857A1

    公开(公告)日:2008-09-25

    申请号:US11949183

    申请日:2007-12-03

    Applicant: Jeson HSU

    Inventor: Jeson HSU

    CPC classification number: B81B7/0012 B81B2201/0292 B81B2203/0338

    Abstract: A sensor chip and substrate assembly for use in a MEMS device includes a substrate and a sensor chip. The substrate has a top surface, a bottom surface opposite to the top surface, and a passage obliquely penetrating through the top surface and the bottom surface. The sensor chip is mounted on the top surface of the substrate and provided with a sensing zone facing the passage of the substrate. The oblique passage provides a buffering effect to prevent damage to the sensor chip when the quantity of the physical property sending from the detected object increases sharply.

    Abstract translation: 用于MEMS器件的传感器芯片和衬底组件包括衬底和传感器芯片。 基板具有顶表面,与顶表面相对的底表面和倾斜地穿过顶表面和底表面的通道。 传感器芯片安装在基板的顶表面上并且设置有面向基板通道的感测区域。 当从检测到的物体发送的物理量的量急剧增加时,倾斜通道提供缓冲效果以防止对传感器芯片的损坏。

    Integrated capacitive microfluidic sensors method and apparatus
    270.
    发明授权
    Integrated capacitive microfluidic sensors method and apparatus 失效
    集成电容微流体传感器的方法和装置

    公开(公告)号:US06945116B2

    公开(公告)日:2005-09-20

    申请号:US10802667

    申请日:2004-03-16

    Abstract: A microfluidic device and method for capacitive sensing. The device includes a fluid channel including an inlet at a first end and an outlet at a second end, a cavity region coupled to the fluid channel, and a polymer based membrane coupled between the fluid channel and the cavity region. Additionally, the device includes a first capacitor electrode coupled to the membrane, a second capacitor electrode coupled to the cavity region and physically separated from the first capacitor electrode by at least the cavity region, and an electrical power source coupled between the first capacitor electrode and the second capacitor electrode and causing an electric field at least within the cavity region. The polymer based membrane includes a polymer.

    Abstract translation: 用于电容感测的微流体装置和方法。 该装置包括流体通道,其包括在第一端处的入口和在第二端处的出口,耦合到流体通道的空腔区域以及耦合在流体通道和腔区域之间的基于聚合物的膜。 另外,该器件包括耦合到膜的第一电容器电极,耦合到空腔区域的第二电容器电极,并且至少通过腔区域与第一电容器电极物理分离;以及电源,耦合在第一电容器电极和 所述第二电容器电极至少在所述腔区域内引起电场。 基于聚合物的膜包括聚合物。

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