公开(公告)号：US08941247B1

公开(公告)日：2015-01-27

申请号：US14191978

申请日：2014-02-27

Applicant: SiTime Corporation

Inventor： Pavan Gupta ,  Aaron Partridge ,  Markus Lutz

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0083 ,  B81B7/007 ,  B81B7/0077 ,  B81B2201/0271 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/0023 ,  B81C1/00301 ,  B81C1/00333 ,  B81C1/00341 ,  B81C2201/016 ,  B81C2203/0118 ,  B81C2203/0154 ,  H01L23/3107 ,  H01L23/34 ,  H01L23/498 ,  H01L2224/48091 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: In a packaging structure for a microelectromechanical-system (MEMS) resonator system, a resonator-control chip is mounted on a lead frame having a plurality of electrical leads, including electrically coupling a first contact on a first surface of the resonator-control chip to a mounting surface of a first electrical lead of the plurality of electrical leads through a first electrically conductive bump. A MEMS resonator chip is mounted to the first surface of the resonator-control chip, including electrically coupling a contact on a first surface of the MEMS resonator chip to a second contact on the first surface of the resonator-control chip through a second electrically conductive bump. The MEMS resonator chip, resonator-control chip and mounting surface of the first electrical lead are enclosed within a package enclosure that exposes a contact surface of the first electrical lead at an external surface of the packaging structure.

Abstract translation: 在微机电系统（MEMS）谐振器系统的封装结构中，谐振器控制芯片安装在具有多个电引线的引线框架上，引线框架包括将谐振器控制芯片的第一表面上的第一触点电耦合到 所述多个电引线中的第一电引线的安装表面通过第一导电凸块。 MEMS谐振器芯片安装在谐振器控制芯片的第一表面上，包括将MEMS谐振器芯片的第一表面上的触点与谐振器控制芯片的第一表面上的第二触点电耦合通过第二导电 磕碰。 MEMS谐振器芯片，谐振器控制芯片和第一电引线的安装表面封装在封装外壳内，该封装外壳暴露出封装结构的外表面处的第一电引线的接触表面。

公开(公告)号：USRE45286E1

公开(公告)日：2014-12-09

申请号：US13890668

申请日：2013-05-09

Applicant: STMicroelectronics, Inc.

Inventor： Olivier Le Neel ,  Peyman Sana ,  Loi Nguyen ,  Venkatesh Mohanakrishnaswamy

IPC: H01L21/00

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  H01L27/0617

Abstract: An embedded MEMS semiconductor substrate is set forth and can be a starting material for subsequent semiconductor device processing. A MEMS device is formed in a semiconductor substrate, including at least one MEMS electrode and a buried silicon dioxide sacrificial layer has been applied for releasing the MEMS. A planarizing layer is applied over the substrate, MEMS device and MEMS electrode. A polysilicon protection layer is applied over the planarizing layer. A silicon nitride capping layer is applied over the polysilicon protection layer. A polsilicon seed layer is applied over the polysilicon nitride capping layer. The MEMS device is released by removing at least a portion of the buried silicon dioxide sacrificial layer and an epitaxial layer is grown over the polysilicon seed layer to be used for subsequent semiconductor wafer processing.

Abstract translation: 介绍了一种嵌入式MEMS半导体衬底，可以作为后续半导体器件处理的起始材料。 在包括至少一个MEMS电极的半导体衬底中形成MEMS器件，并且已经应用​​了掩埋的二氧化硅牺牲层来释放MEMS。 在衬底，MEMS器件和MEMS电极上施加平坦化层。 在平坦化层上施加多晶硅保护层。 在多晶硅保护层上施加氮化硅覆盖层。 将多晶硅种子层施加在多晶硅氮化物覆盖层上。 通过去除掩埋的二氧化硅牺牲层的至少一部分来释放MEMS器件，并且在多晶硅种子层上生长外延层以用于随后的半导体晶片处理。

公开(公告)号：US20140239979A1

公开(公告)日：2014-08-28

申请号：US13779160

申请日：2013-02-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： IRA OAKTREE WYGANT ,  PETER B. JOHNSON

IPC: G01R27/26

CPC classification number: G01P15/125 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/036 ,  H02N1/006 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2468 ,  H03H9/2489 ,  H04R19/005 ,  Y10T29/49165

Abstract: A packaged capacitive MEMS sensor device includes at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell including a first substrate having a thick and a thin dielectric region. A second substrate with a membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a MEMS cavity. The membrane layer provides a fixed electrode and a released MEMS electrode over the MEMS cavity. A first through-substrate via (TSV) extends through a top side of the MEMS electrode and a second TSV through a top side of the fixed electrode. A metal cap is on top of the first TSV and second TSV. A third substrate including an inner cavity and outer protruding portions framing the inner cavity is bonded to the thick dielectric regions. The third substrate together with the first substrate seals the MEMS electrode.

Abstract translation: 封装的电容MEMS传感器装置包括至少一个电容式MEMS传感器元件，其具有至少一个电容式MEMS传感器单元，该电容式MEMS传感器单元包括具有厚和薄电介质区域的第一基板 具有膜层的第二衬底被结合到厚电介质区域和薄介电区域上以提供MEMS空腔。 膜层在MEMS腔体上提供固定电极和释放的MEMS电极。 第一穿通基板通孔（TSV）延伸穿过MEMS电极的顶侧，通过固定电极的顶侧延伸穿过第二TSV。 金属帽位于第一TSV和第二TSV的顶部。 包括内腔和构成内腔的外突出部分的第三基板被接合到厚电介质区域。 第三衬底与第一衬底一起密封MEMS电极。

公开(公告)号：US08766381B2

公开(公告)日：2014-07-01

申请号：US13230035

申请日：2011-09-12

Applicant: Fabrice Casset ,  Lionel Cadix ,  Perceval Coudrain ,  Alexis Farcy ,  Laurent-Luc Chapelon ,  Yacine Felk ,  Pascal Ancey

Inventor： Fabrice Casset ,  Lionel Cadix ,  Perceval Coudrain ,  Alexis Farcy ,  Laurent-Luc Chapelon ,  Yacine Felk ,  Pascal Ancey

IPC: H01L29/06

CPC classification number: B81C1/00246 ,  B81B2201/014 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2203/0353 ,  B81B2207/012 ,  B81C1/005 ,  G01P15/125 ,  G01P2015/082 ,  H01L2924/0002 ,  H03H3/0073 ,  H03H9/2426 ,  H01L2924/00

Abstract: The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element.

Abstract translation: 集成电路包括具有相对的第一和第二主表面的支撑基板。 空腔通过支撑基板并连接第一和第二主表面。 集成电路包括具有移动元件的装置，移动元件和一对相关联的电极包括在空腔中。 移动元件的锚定节点位于第一主表面的水平面上。 集成电路包括布置在第一主表面的电平处的第一基本芯片，并与移动元件电连接到该装置。

公开(公告)号：US20140145553A1

公开(公告)日：2014-05-29

申请号：US14083984

申请日：2013-11-19

Applicant: Seiko Epson Corporation

Inventor： Ryuji Kihara ,  Aritsugu Yajima

IPC: B81B3/00

CPC classification number: B81B3/007 ,  B81B2201/0242 ,  B81B2201/0271 ,  G01C19/5712 ,  H03H9/2405 ,  H03H9/2431 ,  H03H9/2436 ,  H03H2009/02354

Abstract: A MEMS vibration element 100 includes a substrate 1, fixing parts 23 provided on a principal surface of the substrate 1, supporting parts (supporting beams 22 and connection beams 21) extending from the fixing parts 23, and an upper electrode (a vibration body) supported by the supporting parts, isolated from the substrate 1. The upper electrode 20 includes cut sections 30 each extending from the peripheral portion of the upper electrode 20 toward the central portion of the upper electrode 20, the cut sections 30 exposing side surfaces 31 of the upper electrode 20. The upper electrode 20 includes joining parts provided at the side surfaces 31 oriented in a direction from the peripheral portion toward the central portion of the upper electrode 20, and the joining parts are connected to the supporting parts 22.

Abstract translation: MEMS振动元件100包括基板1，设置在基板1的主表面上的固定部23，从固定部23延伸的支撑部（支撑梁22和连接梁21）以及上部电极（振动体） 由与基板1隔离的支撑部支撑。上电极20包括从上电极20的周边部朝向上电极20的中心部分延伸的切断部30，切断部30将侧面31 上部电极20.上部电极20具有设置在从上部电极20的周边部朝向中央部的方向取向的侧面31的接合部，接合部与支撑部22连接。

公开(公告)号：US20140125201A1

公开(公告)日：2014-05-08

申请号：US14071025

申请日：2013-11-04

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H01L41/09 ,  B81B7/02

CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

Abstract: A micro-electrical-mechanical systems (MEMS) device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with a first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the first surface, such that the second electrode is in contact with a second bimorph layer of the piezoelectric layer.

Abstract translation: 微电气机械系统（MEMS）装置包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 第一电极可以设置在面向基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与第一表面相对的压电层的第二表面上，使得第二电极与压电层的第二双晶片层接触。

公开(公告)号：US20140110763A1

公开(公告)日：2014-04-24

申请号：US14057590

申请日：2013-10-18

Applicant: Korea University Industrial & Academic Collaboration Foundation ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Sang Song ,  Ho Soo Park ,  Duck Hwan Kim ,  Sang Uk Son ,  Jae Shik Shin ,  Jae-Sung Rieh ,  Byeong Kwon Ju ,  Dong Hoon Hwang

IPC: H01L29/82

CPC classification number: H01L29/82 ,  B81B3/0078 ,  B81B2201/0271 ,  B82Y25/00 ,  G01N29/022 ,  G01N29/036 ,  H01L29/0673 ,  H01L29/42372 ,  H01L29/78 ,  Y10S977/762 ,  Y10S977/938

Abstract: A nano resonance apparatus includes a gate electrode configured to generate a magnetic field, and a nanowire connecting a source electrode to a drain electrode and configured to vibrate in the presence of the magnetic field. The nanowire includes a protruding portion extending in a direction of the gate electrode.

Abstract translation: 纳米共振装置包括被配置为产生磁场的栅电极和将源电极连接到漏极并且被配置为在存在磁场的情况下振动的纳米线。 纳米线包括在栅电极的方向上延伸的突出部分。

公开(公告)号：US20140082936A1

公开(公告)日：2014-03-27

申请号：US14095182

申请日：2013-12-03

Applicant: Seiko Epson Corporation

Inventor： Tsuyoshi YODA

IPC: H01L21/768

CPC classification number: H01L21/76898 ,  B81B7/0006 ,  B81B2201/0242 ,  B81B2201/0271 ,  G01C19/56 ,  G01C19/5776 ,  H01L21/76877 ,  H01L23/481 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K3/225 ,  H05K3/321 ,  H05K3/4038 ,  H05K3/429 ,  H05K3/462 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49139

Abstract: A wiring substrate includes: a substrate having a first surface and a second surface; a first insulating layer stacked on the first surface; a pad electrode stacked on the first insulating layer; a through electrode connected to the pad electrode; and a second insulating layer disposed between the substrate and the through electrode and between the first insulating layer and the through electrode, wherein a diameter of the through electrode in a connection section between the pad electrode and the through electrode is smaller than a diameter of the through electrode on the second surface side, the first insulating layer, the second insulating layer and the through electrode overlap with each other in a peripheral area of the connection section, when seen from a plan view, and the thickness of the first insulating layer in the area is thinner than the thickness of the first insulating layer in other areas.

Abstract translation: 布线基板包括：具有第一表面和第二表面的基板; 堆叠在第一表面上的第一绝缘层; 堆叠在所述第一绝缘层上的焊盘电极; 连接到焊盘电极的贯通电极; 以及设置在所述基板和所述贯通电极之间并且位于所述第一绝缘层与所述贯通电极之间的第二绝缘层，其中，所述焊盘电极和贯通电极之间的连接部中的贯通电极的直径小于 在第二表面侧的贯通电极，第一绝缘层，第二绝缘层和贯通电极在连接部的周边区域彼此重叠，从平面图看，第一绝缘层的厚度 该区域比其它区域的第一绝缘层的厚度薄。

公开(公告)号：US20140077898A1

公开(公告)日：2014-03-20

申请号：US13985876

申请日：2012-02-17

Applicant: Tuomas Pensala ,  Antti Jaakkola ,  Maria Ganchenkova ,  Mika Prunnila ,  Jyrki Kiihamaki

Inventor： Tuomas Pensala ,  Antti Jaakkola ,  Maria Ganchenkova ,  Mika Prunnila ,  Jyrki Kiihamaki

IPC: H01L41/18 ,  H03H3/007 ,  H03H9/24

CPC classification number: H03H9/02448 ,  B81B3/0078 ,  B81B2201/0271 ,  H01L41/18 ,  H03H3/0072 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/2447 ,  H03H2009/02503 ,  H03H2009/02519 ,  H03H2009/241 ,  H03H2009/2442 ,  Y10T29/42

Abstract: The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

Abstract translation: 本发明涉及一种微机械装置及其制造方法。 该装置包括由半导体材料制成的振荡或偏转元件，其包括n型掺杂剂和功能性地连接到所述振荡或偏转元件的激励或感测装置。 根据本发明，振荡或偏转元件基本均匀地掺杂有所述n型掺杂剂。 本发明允许设计具有低温度漂移的各种实用谐振器。

公开(公告)号：US20130302934A1

公开(公告)日：2013-11-14

申请号：US13981504

申请日：2012-01-24

Applicant: Ayako Kato ,  Kazutoshi Torashima ,  Yasuhiro Soeda ,  Shinichiro Watanabe

Inventor： Ayako Kato ,  Kazutoshi Torashima ,  Yasuhiro Soeda ,  Shinichiro Watanabe

IPC: H01L41/33

CPC classification number: H01L41/33 ,  B06B1/0292 ,  B81B3/0072 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0191

Abstract: Provided is a method of manufacturing a capacitive electromechanical transducer using fusion bonding, which is capable of reducing fluctuations in initial deformation among diaphragms caused at positions having different boundary conditions such as the bonding area, thereby enhancing the uniformity of the transducer and stabilizing the sensitivity and the like. The method of manufacturing a capacitive electromechanical transducer includes: forming an insulating layer on a first silicon substrate and forming at least one recess; fusion bonding a second silicon substrate onto the insulating layer; and thinning the second silicon substrate and forming a silicon film. The method further includes, before the bonding of the second silicon substrate onto the insulating layer, forming a groove in the insulating layer at the periphery of the at least one recess.

Abstract translation: 提供一种使用熔接的制造电容式机电换能器的方法，其能够减少在具有不同边界条件（例如接合面积）的位置处引起的膜片之间的初始变形的波动，从而增强换能器的均匀性并稳定灵敏度， 类似。 制造电容式机电换能器的方法包括：在第一硅衬底上形成绝缘层并形成至少一个凹槽; 将第二硅衬底熔合到所述绝缘层上; 并使第二硅衬底变薄并形成硅膜。 该方法还包括在将第二硅衬底接合到绝缘层之前，在至少一个凹部的周边处在绝缘层中形成凹槽。