公开(公告)号：US20140239769A1

公开(公告)日：2014-08-28

申请号：US13779376

申请日：2013-02-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： PETER B. JOHNSON ,  IRA OAKTREE WYGANT

IPC: H02N1/00

CPC classification number: B06B1/0292 ,  A61B8/4483 ,  B06B2201/76 ,  H02N1/002 ,  H02N1/006 ,  H02N1/008

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region. A membrane layer is bonded on the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A through-substrate via (TSV) includes a dielectric liner which extends from a bottom side of the first substrate to a top surface of the membrane layer. A top side metal layer includes a first portion over the TSV, over the movable membrane, and coupling the TSV to the movable membrane. A patterned metal layer is on the bottom side surface of the first substrate including a first patterned layer portion contacting the bottom side of the first substrate lateral to the TSV.

Abstract translation: 电容式微加工超声波传感器（CMUT）装置包括至少一个CMUT单元，该CMUT单元包括第一基板，该第一基板的顶侧包括在其上的图案化的介电层，其包括厚和薄的电介质区域。 膜层结合在厚电介质区域和薄介电区域上，以在微机电系统（MEMS）空腔上提供可移动膜。 贯穿衬底通孔（TSV）包括从第一衬底的底侧延伸到膜层的顶表面的电介质衬垫。 顶侧金属层包括在TSV上方的第一部分，在可移动膜上方，并且将TSV耦合到可移动膜。 图案化的金属层在第一基板的底侧表面上，包括与TSV横向的第一基板的底侧接触的第一图案化层部分。

公开(公告)号：US20170050217A1

公开(公告)日：2017-02-23

申请号：US15345741

申请日：2016-11-08

Applicant: Texas Instruments Incorporated

Inventor： PETER B. JOHNSON ,  IRA OAKTREE WYGANT

IPC: B06B1/02 ,  A61B8/00 ,  H02N1/00

CPC classification number: B06B1/0292 ,  A61B8/4483 ,  B06B2201/76 ,  H02N1/002 ,  H02N1/006 ,  H02N1/008

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region. A membrane layer is bonded on the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A through-substrate via (TSV) includes a dielectric liner which extends from a bottom side of the first substrate to a top surface of the membrane layer. A top side metal layer includes a first portion over the TSV, over the movable membrane, and coupling the TSV to the movable membrane. A patterned metal layer is on the bottom side surface of the first substrate including a first patterned layer portion contacting the bottom side of the first substrate lateral to the TSV.

Abstract translation: 电容式微加工超声波传感器（CMUT）装置包括至少一个CMUT单元，该CMUT单元包括第一基板，该第一基板的顶侧包括在其上的图案化的介电层，其包括厚和薄的电介质区域。 膜层结合在厚电介质区域和薄介电区域上，以在微机电系统（MEMS）空腔上提供可移动膜。 贯穿衬底通孔（TSV）包括从第一衬底的底侧延伸到膜层的顶表面的电介质衬垫。 顶侧金属层包括在TSV上方的第一部分，在可移动膜上方，并且将TSV耦合到可移动膜。 图案化的金属层在第一基板的底侧表面上，包括与TSV横向的第一基板的底侧接触的第一图案化层部分。

公开(公告)号：US20140239979A1

公开(公告)日：2014-08-28

申请号：US13779160

申请日：2013-02-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： IRA OAKTREE WYGANT ,  PETER B. JOHNSON

IPC: G01R27/26

CPC classification number: G01P15/125 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/036 ,  H02N1/006 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2468 ,  H03H9/2489 ,  H04R19/005 ,  Y10T29/49165

Abstract: A packaged capacitive MEMS sensor device includes at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell including a first substrate having a thick and a thin dielectric region. A second substrate with a membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a MEMS cavity. The membrane layer provides a fixed electrode and a released MEMS electrode over the MEMS cavity. A first through-substrate via (TSV) extends through a top side of the MEMS electrode and a second TSV through a top side of the fixed electrode. A metal cap is on top of the first TSV and second TSV. A third substrate including an inner cavity and outer protruding portions framing the inner cavity is bonded to the thick dielectric regions. The third substrate together with the first substrate seals the MEMS electrode.

Abstract translation: 封装的电容MEMS传感器装置包括至少一个电容式MEMS传感器元件，其具有至少一个电容式MEMS传感器单元，该电容式MEMS传感器单元包括具有厚和薄电介质区域的第一基板 具有膜层的第二衬底被结合到厚电介质区域和薄介电区域上以提供MEMS空腔。 膜层在MEMS腔体上提供固定电极和释放的MEMS电极。 第一穿通基板通孔（TSV）延伸穿过MEMS电极的顶侧，通过固定电极的顶侧延伸穿过第二TSV。 金属帽位于第一TSV和第二TSV的顶部。 包括内腔和构成内腔的外突出部分的第三基板被接合到厚电介质区域。 第三衬底与第一衬底一起密封MEMS电极。

公开(公告)号：US20160363609A1

公开(公告)日：2016-12-15

申请号：US15148086

申请日：2016-05-06

Applicant: Texas Instruments Incorporated

Inventor： IRA OAKTREE WYGANT ,  PETER B. JOHNSON

IPC: G01P15/125 ,  B81C1/00 ,  B81B7/00 ,  H03H3/007 ,  H03H9/24

CPC classification number: G01P15/125 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/036 ,  H02N1/006 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2468 ,  H03H9/2489 ,  H04R19/005 ,  Y10T29/49165

Abstract: A method of forming a capacitive micro-electro-mechanical system (MEMS) sensor device includes at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell. A patterned dielectric layer including a thick dielectric region and a thin dielectric region is formed on a top side of a first substrate. A second substrate is bonded to the thick dielectric region to provide at least one sealed micro-electro-mechanical system (MEMS) cavity. The second substrate is thinned to reduce a thickness of said second substrate to provide a membrane layer. Vias are etched through the membrane layer and said thick dielectric region extending into the first substrate to form embedded vias. A dielectric liner which lines the embedded vias is formed within the first substrate. The embedded vias are filed with electrically conductive TSV filler material to form a plurality of through-substrate vias (TSVs), said plurality of TSVs extending to at least a top of said membrane layer. A patterned metal cap layer including metal caps is formed on top of said plurality of TSVs. Trenches are etched through regions of the membrane layer for releasing a first portion of the membrane layer over said MEMS cavity to provide a MEMS electrode and to define a fixed electrode. A third substrate including an inner cavity and outer protruding portions framing said inner cavity is bonded to the thick dielectric. The protruding portions are bonded to the thick dielectric region and, together with said first substrate vacuum, seals said MEMS electrode. The plurality of TSVs on a bottom side of said first substrate are exposed.

Abstract translation: 形成电容式微机电系统（MEMS）传感器装置的方法包括具有至少一个电容式MEMS传感器单元的至少一个电容式MEMS传感器元件。 包括厚电介质区域和薄介电区域的图案化电介质层形成在第一衬底的顶侧上。 第二衬底被结合到厚电介质区域以提供至少一个密封的微机电系统（MEMS）空腔。 第二衬底被薄化以减小所述第二衬底的厚度以提供膜层。 通过膜层蚀刻通孔，并且延伸到第一衬底中的所述厚电介质区域形成嵌入的通孔。 在第一基板内形成有嵌入通孔的电介质衬垫。 嵌入的通孔与导电TSV填充材料一起放置以形成多个穿通基板通孔（TSV），所述多个TSV延伸到所述膜层的至少顶部。 在所述多个TSV的顶部上形成包括金属盖的图案化金属盖层。 通过膜层的区域蚀刻沟槽，以在所述MEMS空腔上释放膜层的第一部分，以提供MEMS电极并限定固定电极。 包括内腔的第三基板和框架所述内腔的外突出部分结合到厚电介质。 突出部分结合到厚电介质区域，并与所述第一衬底真空一起密封所述MEMS电极。 在所述第一基板的底侧上的多个TSV暴露。

公开(公告)号：US20160221038A1

公开(公告)日：2016-08-04

申请号：US15095264

申请日：2016-04-11

Applicant: Texas Instruments Incorporated

Inventor： PETER B. JOHNSON ,  IRA OAKTREE WYGANT

IPC: B06B1/02 ,  B81C1/00

CPC classification number: B06B1/0292 ,  B06B2201/76 ,  B81B7/007 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/036 ,  H02N1/006 ,  H04R19/005 ,  H05K2201/09845 ,  H05K2201/09863

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device including at least one CMUT element with at least one CMUT cell is formed. A patterned dielectric layer thereon including a thick and a thin dielectric region is formed on a top side of a single crystal material substrate. A second substrate is bonded to the thick dielectric region to provide at least one sealed micro-electro-mechanical system (MEMS) cavity. The second substrate is thinned to reduce a thickness of said second substrate to provide a membrane layer. The membrane layer is etched to form a movable membrane over said MEMS cavity and to remove said membrane layer over said top side substrate contact area. The thin dielectric region is removed from over said top side substrate contact area. A top side metal layer is formed including a trace portion coupling said top side substrate contact area to said movable membrane. From a bottom side surface of said first substrate, etching is performed to open an isolation trench around said single crystal material to form a through-substrate via (TSV) plug of said single crystal material at least under said top side substrate contact area which is electrically isolated from surrounding regions of said single crystal material.

Abstract translation: 形成包括至少一个具有至少一个CMUT单元的CMUT元件的电容式微加工超声波传感器（CMUT）装置。 在单晶材料基板的上侧形成有包含厚而薄的电介质区域的图案化电介质层。 第二衬底被结合到厚电介质区域以提供至少一个密封的微机电系统（MEMS）空腔。 第二衬底被薄化以减小所述第二衬底的厚度以提供膜层。 蚀刻膜层以在所述MEMS空腔上形成可移动膜，并且在所述顶侧基板接触区域上去除所述膜层。 从所述顶侧基板接触区域的上方去除薄介电区域。 形成顶侧金属层，其包括将所述顶侧基板接触区域连接到所述可动膜的迹线部分。 从所述第一衬底的底侧表面进行蚀刻以打开围绕所述单晶材料的隔离沟槽，以至少在所述顶侧衬底接触区域的下方形成所述单晶材料的贯穿衬底通孔（TSV）插头 与所述单晶材料的周围区域电隔离。

公开(公告)号：US20140239768A1

公开(公告)日：2014-08-28

申请号：US13779210

申请日：2013-02-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： PETER B. JOHNSON ,  IRA OAKTREE WYGANT

IPC: H02N1/00 ,  H04R19/00

CPC classification number: B06B1/0292 ,  B06B2201/76 ,  B81B7/007 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/036 ,  H02N1/006 ,  H04R19/005 ,  H05K2201/09845 ,  H05K2201/09863

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate of a single crystal material having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region, and a through-substrate via (TSV) extending a full thickness of the first substrate. The TSV is formed of the single crystal material, is electrically isolated by isolation regions in the single crystal material, and is positioned under a top side contact area of the first substrate. A membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A metal layer is over the top side substrate contact area and over the movable membrane including coupling of the top side substrate contact area to the movable membrane.

Abstract translation: 电容式微加工超声波传感器（CMUT）装置包括至少一个CMUT单元，其包括单晶材料的第一基板，其具有包括厚和薄的电介质区域的在其上的图案化电介质层的顶侧，以及贯穿基板通孔 TSV）延伸第一基板的整个厚度。 TSV由单晶材料形成，通过单晶材料中的隔离区电隔离，并且位于第一基板的顶侧接触区域的下方。 膜层结合到厚电介质区域和薄介电区域上，以在微机电系统（MEMS）腔体上提供可移动膜。 金属层在顶侧基板接触区域上方并且在可移动膜上方，包括顶侧基板接触区域与可动膜的耦合。