公开(公告)号：US20250060679A1

公开(公告)日：2025-02-20

申请号：US18701570

申请日：2022-10-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Davide BARBIERI ,  Pascal CERFONTAINE

IPC: G03F7/00

Abstract: Autoencoder models may be used in the field of lithography to estimate, infer or predict a parameter of interest (e.g., metrology metrics). An autoencoder model is trained to predict a parameter by training it with measurement data (e.g., pupil images) of a substrate obtained from a measurement tool (e.g., optical metrology tool). Disclosed are methods and systems for synchronizing two or more autoencoder models for in-device metrology. Synchronizing two autoencoder models may configure the encoders of both autoencoder models to map from different signal spaces (e.g., measurement data obtained from different machines) to the same latent space, and the decoders to map from the same latent space to each autoencoder's respective signal space. Synchronizing may be performed for various purposes, including matching a measurement performance of one tool with another tool, and configuring a model to adapt to measurement process changes (e.g., changes in characteristics of the tool) over time.

公开(公告)号：US12232244B2

公开(公告)日：2025-02-18

申请号：US17428814

申请日：2020-02-07

Applicant: ASML Netherlands B.V.

Inventor： Theodorus Wilhelmus Driessen

IPC: H01J37/153 ,  H05G2/00

Abstract: A target apparatus (300) for an extreme ultraviolet (EUV) light source includes a target generator, a sensor module (130), and a target generator controller (325). The target generator includes a reservoir (115) configured to contain target material (114) that produces EUV light in a plasma state and a nozzle structure (117) in fluid communication with the reservoir. The target generator defines an opening (119) in the nozzle structure through which the target material received from the reservoir is released. The sensor module is configured to: detect an aspect relating to target material released from the opening as the target material travels along a trajectory toward a target space (112), and produce a one-dimensional signal from the detected aspect. The target generator controller is in communication with the sensor module and the target generator, and is configured to modify characteristics of the target material based on an analysis of the one-dimensional signal.

公开(公告)号：US12230013B2

公开(公告)日：2025-02-18

申请号：US18365134

申请日：2023-08-03

Applicant: ASML Netherlands B.V.

Inventor： Wentian Zhou ,  Liangjiang Yu ,  Teng Wang ,  Lingling Pu ,  Wei Fang

IPC: G06T7/00 ,  G06F18/214 ,  G06V10/774 ,  G06V10/776 ,  G06V10/98

Abstract: Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.

公开(公告)号：US20250044709A1

公开(公告)日：2025-02-06

申请号：US18718306

申请日：2022-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Willem Louis VAN MIERLO

IPC: G03F7/00 ,  G06T7/00

Abstract: Systems, methods, and media for determining a processing parameter associated with a lithography process. In some embodiments, image data of features on a substrate may be obtained, and the image data may be analyzed in Fourier space. Based on the analysis, an amplitude and a phase may be determined, and an overlay of the features may be determined based on the amplitude and the phase.

公开(公告)号：US20250037967A1

公开(公告)日：2025-01-30

申请号：US18911806

申请日：2024-10-10

Applicant: ASML Netherlands B.V.

Inventor： Xuedong LIU ,  Weimin ZHOU ,  Xiaoxue CHEN ,  Xiaoyu JI ,  Heng LI ,  Shahedul HOQUE ,  Zongyao LI ,  Shuhao LIU ,  Weiming REN

IPC: H01J37/28 ,  H01J37/145 ,  H01J37/147 ,  H01J37/244

Abstract: Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a compound objective lens comprising a magnetic lens and an electrostatic lens, the magnetic lens comprising a cavity, and an electron detector located immediately upstream from a polepiece of the magnetic lens and inside the cavity of the magnetic lens. In some embodiments, deflectors may be located between the electron detector and the opening of the polepiece adjacent to the sample to achieve a large field of view. Electron distributions among the detectors can be manipulated without changing the landing energy by changing the potential of the control electrode(s) in the electrostatic objective lens. The electron source can be operated with several discrete potentials to cover different landing energies, while the potential difference between electron source and the extractor is fixed.

公开(公告)号：US12210294B2

公开(公告)日：2025-01-28

申请号：US17608760

申请日：2020-05-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Butler ,  Bas Jansen

IPC: G03F7/00 ,  H02N2/02 ,  H02N2/06

Abstract: An actuator assembly including a first piezo actuator and a second piezo actuator. The piezo actuator has a correction unit configured to determine an output voltage difference representing a difference between a voltage at the output terminal of the first piezo actuator and a voltage at the output terminal of the second piezo actuator, and a first power correction for correcting the first power signal and/or a second power correction for correcting the second power signal, based on the output voltage difference.

公开(公告)号：US20250029811A1

公开(公告)日：2025-01-23

申请号：US18907436

申请日：2024-10-04

Applicant: ASML Netherlands B.V.

Inventor： Arthur Eduard OVERLACK ,  Ronald KROON ,  Richard Michel VAN LEEUWEN ,  Andre Luis RODRIGUES MANSANO ,  Herre Tjerk STEENSTRA ,  Erwin Robert Alexander VISSER

IPC: H01J37/244 ,  H01J37/28

Abstract: The embodiments of the present disclosure provide a sensor substrate for a charged particle optical device and/or a charged particle assessment apparatus, the sensor substrate comprising: at least one distance sensor configured to generate a measurement signal representative of a distance between the distance sensor and a facing surface of a target; and at least one charged particle optical component.

公开(公告)号：US20250021017A1

公开(公告)日：2025-01-16

申请号：US18704532

申请日：2022-10-12

Applicant: ASML Netherlands B.V.

Inventor： Raaja Ganapathy SUBRAMANIAN ,  Bearrach MOEST ,  Alexander Alexandrovich DANILIN ,  Rowin MEIJERINK ,  Tim Izaak Johannes GOOSSEN ,  Stanislav Markovich SHUMIACHER

IPC: G03F7/00

Abstract: A method of reducing effects of heating and/or cooling a reticle in a lithographic process includes conditioning the reticle to adjust an initial temperature of the reticle to a predetermined temperature, reducing stress in the reticle to reduce parasitic thermal effects, calibrating a reticle heating model by exposing the reticle and a non-production substrate to a dose of radiation, and processing a production substrate by exposing the reticle and a production substrate to a dose of radiation based on the reticle heating model. The method can increase calibration accuracy and speed of the reticle heating model, reduce conditioning times of the reticle, reduce stress in the reticle, avoid rework of production substrates, and increase throughput, yield, and accuracy.

公开(公告)号：US20250021015A1

公开(公告)日：2025-01-16

申请号：US18705509

申请日：2022-10-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Jin CHENG ,  Feng CHEN ,  Leiwu ZHENG ,  Yongfa FAN ,  Yen-Wen LU ,  Jen-Shiang WANG ,  Ziyang MA ,  Dianwen ZHU ,  Xi CHEN ,  Yu ZHAO

IPC: G03F7/00 ,  G03F1/36 ,  G03F1/70

Abstract: An etch bias direction is determined based on a curvature of a contour in a substrate pattern. The etch bias direction is configured to be used to enhance an accuracy of a semiconductor patterning process relative to prior patterning processes. In some embodiments, a representation of the substrate pattern is received, which includes the contour in the substrate pattern. The curvature of the contour of the substrate pattern is determined, and an etch bias direction is determined based on the curvature by considering curvatures of adjacent contour portions. A simulation model is used to determine an etch effect based on the etch bias direction for an etching process on the substrate pattern.

公开(公告)号：US12197134B2

公开(公告)日：2025-01-14

申请号：US18090750

申请日：2022-12-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng Wang ,  Xiang Wan

IPC: G03F7/20 ,  G03F7/00

Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.