公开(公告)号：US20120205808A1

公开(公告)日：2012-08-16

申请号：US13459268

申请日：2012-04-30

Applicant: Bang-Chiang Lan ,  Ming-I Wang ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan ,  Li-Che Chen ,  Meng-Jia Lin

Inventor： Bang-Chiang Lan ,  Ming-I Wang ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan ,  Li-Che Chen ,  Meng-Jia Lin

IPC: H01L23/48

CPC classification number: H01L24/02 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/115 ,  B81C1/00246 ,  B81C2203/0714 ,  H01L23/585 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

Abstract translation: 提供垫的保护结构。 衬垫设置在半导体衬底上的电介质层中，衬垫包括连接区域和包围连接区域的周边区域。 保护结构至少包括屏障，绝缘层和掩模层。 阻挡层设置在周边区域的电介质层中。 绝缘层设置在电介质层上。 掩模层设置在电介质层上并覆盖绝缘层，掩模层包括露出焊盘连接区域的开口。

公开(公告)号：US08193640B2

公开(公告)日：2012-06-05

申请号：US12538168

申请日：2009-08-10

Applicant: Bang-Chiang Lan ,  Ming-I Wang ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan ,  Li-Che Chen ,  Meng-Jia Lin

Inventor： Bang-Chiang Lan ,  Ming-I Wang ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan ,  Li-Che Chen ,  Meng-Jia Lin

IPC: H01L23/48

CPC classification number: H01L24/02 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/115 ,  B81C1/00246 ,  B81C2203/0714 ,  H01L23/585 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

Abstract translation: 提供垫的保护结构。 衬垫设置在半导体衬底上的电介质层中，衬垫包括连接区域和包围连接区域的周边区域。 保护结构至少包括屏障，绝缘层和掩模层。 阻挡层设置在周边区域的电介质层中。 绝缘层设置在电介质层上。 掩模层设置在电介质层上并覆盖绝缘层，掩模层包括露出焊盘连接区域的开口。

公开(公告)号：US20110189804A1

公开(公告)日：2011-08-04

申请号：US12699797

申请日：2010-02-03

Applicant: Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

Inventor： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

IPC: H01L21/30

CPC classification number: H01L21/30

Abstract: A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.

Abstract translation: 一种制造MEMS麦克风的方法包括：首先提供具有第一表面和第二表面的基底。 衬底分为逻辑区和MEMS区。 蚀刻衬底的第一表面以在MEMS区域中形成多个第一沟槽。 然后在多个第一沟槽中形成STI材料。 随后，蚀刻衬底的第二表面以在MEMS区域中形成第二沟槽，其中第二沟槽与每个第一沟槽连接。 最后，第一个沟槽中的STI材料被去除。

公开(公告)号：US20110115040A1

公开(公告)日：2011-05-19

申请号：US12618774

申请日：2009-11-15

Applicant: Tzung-I Su ,  Chao-An Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Min Chen ,  Meng-Jia Lin

Inventor： Tzung-I Su ,  Chao-An Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Min Chen ,  Meng-Jia Lin

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: G02B6/1228 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/136 ,  G02B6/428

Abstract: A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.

Abstract translation: 提供一种制造半导体光电子结构的方法。 首先，提供基板，并且在其中形成波导，然后在波导上形成多个电介质层。 接下来，在电介质层上设置接触焊盘和钝化层，并且在其上形成图案化的掩模层。 最后，通过使用图案化掩模层来暴露接触焊盘并去除钝化层和介电层的一部分以形成变压器来提供蚀刻工艺。

公开(公告)号：US20110097033A1

公开(公告)日：2011-04-28

申请号：US12605891

申请日：2009-10-26

Applicant: Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

Inventor： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

IPC: G02B6/12 ,  G02B1/10 ,  G02B6/32

CPC classification number: G02B6/12004 ,  G02B6/305

Abstract: A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

Abstract translation: 提供聚焦构件和具有该聚焦构件的光电子器件。 聚焦构件包括多个级别的导电插塞和多层导电层，这些导电层一起形成反转的半舟形状。 光电子器件包括底层，底层上方的光波导，覆盖光波导的电介质层，以及设置在光电子器件的边缘并位于光波导上方的电介质层中的上述聚焦构件。 聚焦构件的反转半舟形的较宽端面向光电器件的外侧。 底层和电介质层的折射率小于光波导的折射率。

公开(公告)号：US20100074458A1

公开(公告)日：2010-03-25

申请号：US12233919

申请日：2008-09-19

Applicant: Bang-Chiang Lan ,  Ming-I Wang ,  Li-Hsun Ho ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang

Inventor： Bang-Chiang Lan ,  Ming-I Wang ,  Li-Hsun Ho ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang

IPC: H04R3/00 ,  H04R31/00

CPC classification number: B81B3/0021 ,  B81B2201/0271 ,  H04R3/00 ,  H04R7/00 ,  H04R19/005 ,  H04R31/00 ,  H04R2499/11 ,  Y10T29/49002

Abstract: A structure of a micro-electro-mechanical systems (MEMS) electroacoustic transducer includes a substrate, a diaphragm, a silicon material layer, and a conductive pattern. The substrate includes an MEMS device region. The diaphragm has openings, and is disposed in the MEMS device region. A first cavity is formed between the diaphragm and the substrate. The silicon material layer is disposed on the diaphragm and seals the diaphragm. The conductive pattern is disposed beneath the diaphragm in the MEMS device region.

Abstract translation: 微电子机械系统（MEMS）电声换能器的结构包括基板，隔膜，硅材料层和导电图案。 衬底包括MEMS器件区域。 隔膜具有开口，并且设置在MEMS器件区域中。 在隔膜和基板之间形成第一空腔。 硅材料层设置在隔膜上并密封隔膜。 导电图案设置在MEMS器件区域中的隔膜下方。

公开(公告)号：US20100002894A1

公开(公告)日：2010-01-07

申请号：US12168057

申请日：2008-07-03

Applicant: Bang-Chiang Lan ,  Li-Hsun Ho ,  Wei-Cheng Wu ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang ,  Ming-I Wang

Inventor： Bang-Chiang Lan ,  Li-Hsun Ho ,  Wei-Cheng Wu ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang ,  Ming-I Wang

IPC: H04R7/02 ,  B81C5/00 ,  H05K5/02

CPC classification number: H04R31/00 ,  H04R2201/003 ,  Y10T29/49005

Abstract: A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.

Abstract translation: MEMS器件包括设置在基板的同一侧上的通气孔结构和MEMS结构。 通气孔结构与MEMS结构相邻，其间具有蚀刻停止结构。 MEMS结构包括腔室，通气孔结构包括金属层，其上具有至少一个孔，作为通气孔，以通过蚀刻停止结构连接MEMS结构的室。 因此，MEMS器件具有侧向通气孔。 此外，由于通气孔结构和MEMS结构设置在基板的同一侧，所以制造过程方便且节省时间。

公开(公告)号：US08525354B2

公开(公告)日：2013-09-03

申请号：US13272289

申请日：2011-10-13

Applicant: Hui-Min Wu ,  Ming-I Wang ,  Kuan-Yu Wang ,  Kun-Che Hsieh ,  Chien-Hsin Huang

Inventor： Hui-Min Wu ,  Ming-I Wang ,  Kuan-Yu Wang ,  Kun-Che Hsieh ,  Chien-Hsin Huang

IPC: H01L23/48 ,  H01L21/44

CPC classification number: H01L23/3192 ,  B81B7/0006 ,  B81B2207/015 ,  H01L23/291 ,  H01L23/293 ,  H01L24/05 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A bond pad structure comprises an interconnection structure and an isolation layer. The dielectric layer has an opening and a metal pad. The isolation layer is disposed on the interconnection structure and extends into the opening until it is in contact with the metal pad, whereby the sidewalls of the opening is blanketed by the isolation layer, and a portion of the metal pad is exposed from the opening.

Abstract translation: 接合焊盘结构包括互连结构和隔离层。 电介质层具有开口和金属垫。 隔离层设置在互连结构上并延伸到开口中直到与金属垫接触，由此隔离层覆盖开口的侧壁，并且金属垫的一部分从开口露出。

公开(公告)号：US08384214B2

公开(公告)日：2013-02-26

申请号：US12577734

申请日：2009-10-13

Applicant: Hui-Min Wu ,  Bang-Chiang Lan ,  Ming-I Wang ,  Tzung-I Su ,  Chien-Hsin Huang ,  Chao-An Su ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

Inventor： Hui-Min Wu ,  Bang-Chiang Lan ,  Ming-I Wang ,  Tzung-I Su ,  Chien-Hsin Huang ,  Chao-An Su ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

IPC: H01L31/00 ,  H01L23/02 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L24/05 ,  B81B7/0006 ,  B81B2207/015 ,  B81C2203/0714 ,  H01L23/562 ,  H01L2224/05093 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a plurality of plugs which are electrically connected to each other vertically. There is no contact plug disposed between the pad structure and the substrate. The protection structure is disposed in the dielectric layer and encompasses the pad structure.

Abstract translation: 提供半导体结构。 半导体结构包括衬底，电介质层，衬垫结构和保护结构。 电介质层设置在基板上。 焊盘结构设置在电介质层中。 垫结构包括多个第一金属层和多个彼此垂直电连接的插塞。 在衬垫结构和衬底之间没有设置接触插头。 保护结构设置在电介质层中并且包围衬垫结构。

公开(公告)号：US08368153B2

公开(公告)日：2013-02-05

申请号：US12756982

申请日：2010-04-08

Applicant: Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

Inventor： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

IPC: H01L29/84 ,  H01L21/30

CPC classification number: B81B7/0061 ,  B81B2201/0257 ,  B81C2203/0136 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/1461 ,  H04R2201/003 ,  Y10T29/49005 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A wafer level package of micro electromechanical system (MEMS) microphone includes a substrate, a number of dielectric layers stacked on the substrate, a MEMS diaphragm, a number of supporting rings and a protective layer. The MEMS diaphragm is disposed between two adjacent dielectric layers. A first chamber is between the MEMS diaphragm and the substrate. The supporting rings are disposed in some dielectric layers and stacked with each other. An inner diameter of the lower supporting ring is greater than that of the upper supporting ring. The protective layer is disposed on the upmost supporting ring and covers the MEMS diaphragm. A second chamber is between the MEMS diaphragm and the protective layer. The protective layer defines a number of first through holes for exposing the MEMS diaphragm. The wafer level package of MEMS microphone has an advantage of low cost.

Abstract translation: 微机电系统（MEMS）麦克风的晶片级封装包括基板，堆叠在基板上的多个电介质层，MEMS隔膜，多个支撑环和保护层。 MEMS隔膜设置在两个相邻的电介质层之间。 第一腔室位于MEMS隔膜和衬底之间。 支撑环设置在一些电介质层中并彼此堆叠。 下支撑环的内径大于上支撑环的内径。 保护层设置在最上面的支撑环上并覆盖MEMS隔膜。 第二腔室位于MEMS隔膜和保护层之间。 保护层限定许多用于暴露MEMS隔膜的第一通孔。 MEMS麦克风的晶圆级封装具有成本低的优点。