Abstract:
An inorganic electroluminescence (“EL”) device includes a lower electrode; a dielectric layer disposed on the lower electrode; an inorganic emission layer disposed on the dielectric layer; an upper electrode disposed on the inorganic emission layer; a waveguide layer disposed on the upper electrode; and a reflection film partially coating the waveguide layer and including an emission portion through which light is emitted.
Abstract:
A carbon nanotube emitter and its fabrication method, a Field Emission Device (FED) using the carbon nanotube emitter and its fabrication method include a carbon nanotube emitter having a plurality of first carbon nanotubes arranged on a substrate and in parallel with the substrate, and a plurality of the second carbon nanotubes arranged on a surface of the first carbon nanotubes.
Abstract:
Disclosed herein is a method of preparing a low resistance metal line, is a method of manufacturing a dispersion type AC inorganic electroluminescent device and a dispersion type AC inorganic electroluminescent device manufactured thereby, in which a light-emitting layer and a dielectric layer between a lower electrode and an upper electrode are simultaneously formed through a single process using spin coating, thereby simplifying the overall manufacturing process and decreasing the manufacturing cost, and furthermore, the contact interface between the light-emitting layer and the dielectric layer is increased, therefore increasing the brightness of the device.
Abstract:
Provided are an electron multiplier electrode using a secondary electron extraction electrode and a terahertz radiation source using the electron multiplier electrode. The electron multiplier electrode includes: a cathode; an emitter disposed on the cathode and extracting electron beams; a gate electrode for switching the electron beams, the gate electrode being disposed on the cathode to surround the emitter; and a secondary electron extraction electrode disposed on the gate electrode and including a secondary electron extraction layer extracting secondary electrons due to collision of the electron beams.
Abstract:
A method of manufacturing a field emission device comprises: sequentially forming cathodes and a light blocking layer on a substrate, and patterning the light blocking layer to form blocking layer holes; sequentially forming an insulating layer and a gate material layer on the light blocking layer, and patterning the gate material layer to form gate electrodes in which gate electrode holes are formed; coating a photoresist on the gate electrodes, and exposing and developing the photoresist to form resist holes inside the gate electrode holes; isotropically etching portions of the insulating layer exposed through the resist holes to form insulating layer holes; etching portions of the gate electrodes exposed by the insulating layer holes to form gate holes, and removing the photoresist; and forming emitters on the cathode electrodes exposed by the blocking layer holes.
Abstract:
A field emission backlight device may include a first substrate and a second substrate separate from and roughly parallel to each other, a first anode electrode and a second anode electrode that face each other on inner surfaces of the first substrate and the second substrate, and cathode electrodes separate from and roughly parallel to one another between the first substrate and the second substrate. It may also include electron emission sources disposed on the cathode electrodes to emit electrons by an electric field and a phosphorous layer disposed on the first anode electrode or the second anode electrode.
Abstract:
A field emission backlight unit for a liquid crystal display (LCD) includes: a lower substrate; first electrodes and second electrodes alternately formed in parallel lines on the lower substrate; emitters disposed on at least the first electrodes; an upper substrate spaced apart from the lower substrate by a predetermined distance such that the upper and lower substrates face each other; a third electrode formed on a bottom surface of the upper substrate; and a fluorescent layer formed on the third electrode. Since the backlight unit has a triode-type field emission structure, field emission is very stable. Since the first electrodes and the second electrodes are formed in the same plane, brightness uniformity is improved and manufacturing processes are simplified. If the emitters are disposed on both the first electrodes and the second electrodes, and a cathode voltage and a gate voltage are alternately applied to the first electrodes and second electrodes, the lifespan and brightness of the emitters can be improved. The above advantages are also achieved as a result of the method of driving the backlight unit and the method of manufacturing the lower panel thereof.
Abstract:
A dielectric paste composition including: a plurality of inorganic dielectric particles, a binder, a solvent, and a halogenated hydrocarbon. Also disclosed is a method of forming a dielectric layer, a dielectric layer, and a device including the dielectric layer.
Abstract:
An inorganic electroluminescence (“EL”) device includes a lower electrode; a dielectric layer disposed on the lower electrode; an inorganic emission layer disposed on the dielectric layer; an upper electrode disposed on the inorganic emission layer; a waveguide layer disposed on the upper electrode; and a reflection film partially coating the waveguide layer and including an emission portion through which light is emitted.
Abstract:
A method of manufacturing a field emission device comprises: sequentially forming cathodes and a light blocking layer on a substrate, and patterning the light blocking layer to form blocking layer holes; sequentially forming an insulating layer and a gate material layer on the light blocking layer, and patterning the gate material layer to form gate electrodes in which gate electrode holes are formed; coating a photoresist on the gate electrodes, and exposing and developing the photoresist to form resist holes inside the gate electrode holes; isotropically etching portions of the insulating layer exposed through the resist holes to form insulating layer holes; etching portions of the gate electrodes exposed by the insulating layer holes to form gate holes, and removing the photoresist; and forming emitters on the cathode electrodes exposed by the blocking layer holes.