公开(公告)号：US07569834B1

公开(公告)日：2009-08-04

申请号：US11550762

申请日：2006-10-18

Applicant: Neil Richardson

Inventor： Neil Richardson

IPC: H01J37/14 ,  H01J37/20

CPC classification number: H01J37/145 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/3177 ,  H01J2237/0453 ,  H01J2237/04922 ,  H01J2237/04924 ,  H01J2237/04926 ,  H01J2237/1405 ,  H01J2237/24592

Abstract: A charged particle optic apparatus for improvement in resolution of an electrostatic, multi-beam column is disclosed. The charged particle optic apparatus includes an electrostatic lens array having a first plurality of apertures and a first magnetic pole piece disposed proximate the electrostatic lens array. The first magnetic pole piece includes a second plurality of apertures. The charged particle optic apparatus also includes a second magnetic pole piece disposed proximate the electrostatic lens array such that the electrostatic lens array is between the first magnetic pole piece and the second magnetic pole piece. The second magnetic pole piece includes a third plurality of apertures. The first, second and third pluralities of apertures are aligned with each other. The charged particle optic apparatus may be implemented in a charged particle beam system.

Abstract translation: 公开了一种用于提高静电多光束柱分辨率的带电粒子光学装置。 带电粒子装置包括具有第一多个孔的静电透镜阵列和靠近静电透镜阵列设置的第一磁极片。 第一磁极片包括第二多个孔。 带电粒子装置还包括靠近静电透镜阵列设置的第二磁极片，使得静电透镜阵列位于第一磁极片和第二磁极片之间。 第二磁极片包括第三多个孔。 第一，第二和第三多个孔彼此对准。 带电粒子光学装置可以在带电粒子束系统中实现。

公开(公告)号：US06633174B1

公开(公告)日：2003-10-14

申请号：US09648093

申请日：2000-08-25

Applicant: Akella V. S. Satya ,  David L. Adler ,  Neil Richardson ,  Gustavo A. Pinto ,  David J. Walker

Inventor： Akella V. S. Satya ,  David L. Adler ,  Neil Richardson ,  Gustavo A. Pinto ,  David J. Walker

IPC: G01R31305

CPC classification number: G01R31/307 ,  G01N21/66 ,  G01N21/9501 ,  G01N21/956 ,  G01R31/2884 ,  H01J2237/2817 ,  H01L22/12 ,  H01L22/34 ,  Y10S977/85 ,  Y10S977/86 ,  Y10S977/881

Abstract: Disclosed is a method of inspecting a sample. The method includes moving to a first field associated with a first group of test structures. The first group of test structures are partially within the first field. The method further includes scanning the first field to determine whether there are any defects present within the first group of test structures. When it is determined that there are defects within the first group of test structures, the method further includes repeatedly stepping to areas and scanning such areas so as to determine a specific defect location within the first group of test structures. A suitable test structure for performing this method is also disclosed.

Abstract translation: 公开了一种检查样品的方法。 该方法包括移动到与第一组测试结构相关联的第一字段。 第一组测试结构部分在第一个领域内。 该方法还包括扫描第一场以确定在第一组测试结构内是否存在任何缺陷。 当确定在第一组测试结构内存在缺陷时，该方法还包括重复地步进到区域并扫描这些区域，以便确定第一组测试结构内的特定缺陷位置。 还公开了用于执行该方法的合适的测试结构。

公开(公告)号：US06524873B1

公开(公告)日：2003-02-25

申请号：US09648094

申请日：2000-08-25

Applicant: Akella V. S. Satya ,  David L. Adler ,  Bin-Ming Benjamin Tsai ,  Neil Richardson ,  David J. Walker

Inventor： Akella V. S. Satya ,  David L. Adler ,  Bin-Ming Benjamin Tsai ,  Neil Richardson ,  David J. Walker

IPC: G01R3126

CPC classification number: H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817

Abstract: Disclosed is, a method for detecting electrical defects on test structures of a semiconductor die. The semiconductor die includes a plurality of electrically-isolated test structures and a plurality of non-electrically-isolated test structures. Voltages are established for the plurality of electrically-isolated test structures. These voltages are different than the voltages of the plurality of non-electrically-isolated test structures. A region of the semiconductor die is continuously inspected in a first direction thereby obtaining voltage contrast data indicative of whether there are defective test structures. The voltage contrast data is analyzed to determine whether there are one or more defective test structures.

Abstract translation: 公开了一种用于检测半导体管芯的测试结构上的电缺陷的方法。 半导体管芯包括多个电绝缘测试结构和多个非电隔离测试结构。 为多个电隔离测试结构建立电压。 这些电压不同于多个非电隔离测试结构的电压。 在第一方向上连续地检查半导体管芯的区域，从而获得表示是否存在缺陷的测试结构的电压对比度数据。 分析电压对比度数据以确定是否存在一个或多个有缺陷的测试结构。

公开(公告)号：US06211518B1

公开(公告)日：2001-04-03

申请号：US09195097

申请日：1998-11-18

Applicant: Neil Richardson ,  Farid Askary ,  Stefano E. Concina ,  Kevin M. Monahan ,  David L. Adler

Inventor： Neil Richardson ,  Farid Askary ,  Stefano E. Concina ,  Kevin M. Monahan ,  David L. Adler

IPC: H01J3700

CPC classification number: H01J37/28 ,  H01J2237/004 ,  H01J2237/2817

Abstract: A system and method for controlling electron exposure on image specimens by adjusting a raster scan area in-between scan frame cycles. A small, zoomed-in, scan area and the surrounding area are flooded with positive charge for a number of frame cycles between scan frames to reduce the voltage differential between the scan area and surrounding area, thereby reducing the positive charge buildup which tends to obscure small features in scanned images. The peak current into a pixel element on the specimen is reduced by scanning the beam with a line period that is very short compared to regular video. Frames of image data may further be acquired non-sequentially, in arbitrarily programmable patterns. Alternatively, an inert gas can be injected into the scanning electron microscope at the point where the electron beam impinges the specimen to neutralize a charge build-up on the specimen by the ionization of the inert gas by the electron beam.

Abstract translation: 通过调整扫描帧周期之间的光栅扫描区域来控制图像样本上的电子曝光的系统和方法。 一个小的，放大的扫描区域和周围区域在扫描帧之间的多个帧周期中充满正电荷，以减少扫描区域和周围区域之间的电压差，从而减少倾向于模糊的正电荷积聚 扫描图像中的小功能。 通过以与常规视频相比非常短的线周期扫描光束来减小进入样品中的像素元件的峰值电流。 图像数据的帧可以以任意可编程的模式进一步非依次获取。 或者，可以在电子束照射样品的点处将惰性气体注入到扫描电子显微镜中，以通过电子束电离惰性气体来中和样品上的电荷积累。

公开(公告)号：US5144225A

公开(公告)日：1992-09-01

申请号：US737553

申请日：1991-07-25

Applicant: Christopher G. Talbot ,  Neil Richardson

Inventor： Christopher G. Talbot ,  Neil Richardson

IPC: G01R31/305

CPC classification number: G01R31/305

Abstract: Methods and apparatus are disclosed for conditional acquisition of potential measurements in integrated circuits, with the aid of electron-beam probes. The conditional acquisition enables display of waveform images which permit diagnosis of the causes and/or origins of failure in circuits which fail intermittently. Data is acquired in the normal manner on each pass through the test pattern. At the end of each test pattern execution a pass/fail signal from the tester exercising the circuit is used to reject or accept the acquired data. In this fashion, it is possible to accumulate only that data which carries information about the failure of interest and to reject data which does not. Over several test pattern repetitions it is possible to display only that data which shows the failure. Engineers are thus able to efficiently diagnose intermittent failures without the need to change device operating parameters. In one form of the invention, (a) initially a first buffer is defined as a "good-data" buffer and a second buffer is defined as a "temporary-data" buffer; (b) the circuit is probed during application of a test vector pattern to acquire data; (c) the acquired data is summed with stored data from the "good-data" buffer, and the sum is stored in the "temporary-data" buffer; (d) a determination is made whether circuit has failed to operate as expected in response to the pattern and, if the circuit has failed to operate as expected, the second buffer is redefined as a "good-data" buffer and the first buffer is re-defined as a "temporary-data" buffer; and (e) steps (b)-(d) are repeated, such that the data stored in the "good-data" buffer represents failing operation of the circuit.

Abstract translation: 公开了借助于电子束探针在集成电路中对电位测量进行条件采集的方法和装置。 条件采集可以显示允许诊断间歇性故障的电路故障原因和/或故障起因的波形图像。 在通过测试图案的每次通过中以正常方式获取数据。 在每个测试模式结束时，执行来自运行电路的测试仪的通过/失败信号用于拒绝或接受所获取的数据。 以这种方式，只能累积携带关于感兴趣的失败的信息的数据，并且拒绝不存在的数据。 在几个测试模式重复中，可以仅显示显示故障的数据。 因此，工程师能够有效地诊断间歇性故障，而不需要改变设备操作参数。 在本发明的一种形式中，（a）最初将第一缓冲器定义为“良好数据”缓冲器，将第二缓冲器定义为“临时数据”缓冲器; （b）在应用测试矢量模式获取数据时探测电路; （c）将获取的数据与来自“好数据”缓冲器的存储数据相加，并将和存储在“临时数据”缓冲器中; （d）确定电路是否按照预期的方式响应于该模式而失败，并且如果电路未按预期操作失败，则将第二缓冲器重新定义为“良好数据”缓冲器，并且第一缓冲器 重新定义为“临时数据”缓冲区; 和（e）重复步骤（b） - （d），使得存储在“良好数据”缓冲器中的数据表示电路的故障操作。

公开(公告)号：US06627884B2

公开(公告)日：2003-09-30

申请号：US09912732

申请日：2001-07-23

Applicant: Mark A. McCord ,  David Walker ,  Jun Pei ,  Neil Richardson

Inventor： Mark A. McCord ,  David Walker ,  Jun Pei ,  Neil Richardson

IPC: G21K700

CPC classification number: H01J37/28 ,  G01N23/225 ,  H01J2237/004 ,  H01J2237/2817

Abstract: Disclosed are methods and apparatus for simultaneously flooding a sample (e.g., a semiconductor wafer) to control charge and inspecting the sample. The apparatus includes a charged particle beam generator arranged to generate a charged particle beam substantially towards a first portion of the sample and a flood gun for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam. The apparatus further includes a detector arranged to detect charged particles originating from the sample portion. In a further implementation, the apparatus further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample. A second area of the sample is inspected with an inspection beam. The second area comprises at least a portion of the first area flooded by the flood beam. The inspection beam moves in tandem with the flood beam. In another aspect of the present invention, methods and apparatus are provided for controlling the charge buildup of an area of the sample by an electrode having a voltage applied to it and through which the flood beam and charged particles emitted from the area of the sample can pass.

Abstract translation: 公开了用于同时淹没样品（例如，半导体晶片）以控制电荷并检查样品的方法和装置。 该装置包括带电粒子束发生器，其布置成基本上朝向样品的第一部分产生带电粒子束，以及用于产生朝向样品的第二部分的第二束的泛喷枪。 第二光束基本上与检查光束同时产生。 该装置还包括检测器，其被布置成检测源自样品部分的带电粒子。 在另一实施方式中，该装置还包括图像发生器，用于从检测到的粒子生成样品的第一部分的图像。 在一个实施例中，样品是半导体晶片。 在方法方面，样品的第一区域用泛光束淹没以控制样品表面上的电荷。 用检查梁检查样品的第二个区域。 第二区域包括由洪水束淹没的第一区域的至少一部分。 检查光束与泛光束一起移动。在本发明的另一方面，提供了一种方法和装置，用于通过具有施加到其上的电压的电极来控制样品区域的电荷积累，通过该方法和装置， 并且从样品的区域发射的带电粒子可以通过。

公开(公告)号：US06576923B2

公开(公告)日：2003-06-10

申请号：US10178329

申请日：2002-06-21

Applicant: Akella V. S. Satya ,  Robert Thomas Long ,  Lynda C. Mantalas ,  Gustavo A. Pinto ,  Neil Richardson

Inventor： Akella V. S. Satya ,  Robert Thomas Long ,  Lynda C. Mantalas ,  Gustavo A. Pinto ,  Neil Richardson

IPC: H01L2358

CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S977/712 ,  Y10S977/723 ,  Y10S977/888 ,  Y10S977/89 ,  H01L2924/00

Abstract: Disclosed is a semiconductor die having a lower test structure formed in a lower metal layer of the semiconductor die. The lower conductive test structure has a first end and a second end. The first end is coupled to a predetermined voltage level. The semiconductor die also includes an insulating layer formed over the lower metal layer. The die further includes an upper test structure formed in an upper metal layer of the semiconductor die. The upper conductive test structure is coupled with the second end of the lower conductive test structure. The upper metal layer is formed over the insulating layer. In a specific implementation, the first end of the lower test structure is coupled to ground. In another embodiment, the semiconductor die also includes a substrate and a first via coupled between the first end of the lower test structure and the substrate. In yet another aspect, the lower test structure is an extended metal line, and the upper test structure is a voltage contrast element. Methods for inspecting and fabricating such semiconductor die are also disclosed.

公开(公告)号：US5830754A

公开(公告)日：1998-11-03

申请号：US361014

申请日：1994-12-21

Applicant: Ellis Reinherz ,  Peter Sayre ,  Hsiu-Ching Chang ,  Neil Richardson

Inventor： Ellis Reinherz ,  Peter Sayre ,  Hsiu-Ching Chang ,  Neil Richardson

IPC: A61K38/00 ,  C07K14/705 ,  C07K16/28 ,  C12N5/00 ,  C07H21/02 ,  C07H21/04 ,  C12N15/00

CPC classification number: C07K14/70507 ,  C07K16/2806 ,  A61K38/00

Abstract: A cDNA sequence encoding human T11 or a fragment thereof which is capable of inhibiting T-lymphocyte activation.

公开(公告)号：US5550055A

公开(公告)日：1996-08-27

申请号：US449199

申请日：1995-05-24

Applicant: Ellis Reinherz ,  Peter Sayre ,  Hsiu-Ching Chang ,  Neil Richardson

Inventor： Ellis Reinherz ,  Peter Sayre ,  Hsiu-Ching Chang ,  Neil Richardson

IPC: A61K38/00 ,  C07K14/705 ,  C07K16/28 ,  C12N15/00 ,  C07H21/04 ,  C07K14/00 ,  C12P21/06

CPC classification number: C07K16/2806 ,  C07K14/70507 ,  A61K38/00

Abstract: A cDNA sequence encoding human T11 or a fragment thereof which is capable of inhibiting T-lymphocyte activation.

Abstract translation: 编码能够抑制T淋巴细胞活化的人T11或其片段的cDNA序列。

公开(公告)号：US5210487A

公开(公告)日：1993-05-11

申请号：US710768

申请日：1991-06-04

Applicant: Hitoshi Takahashi ,  Douglas Masnaghetti ,  Neil Richardson

Inventor： Hitoshi Takahashi ,  Douglas Masnaghetti ,  Neil Richardson

IPC: G01N23/225 ,  G01Q80/00 ,  G01R31/302 ,  G01R31/305 ,  H01L21/66

CPC classification number: G01R31/305

Abstract: A surface is probed with a pulsed electron beam and secondary electrons are detected to produce a detector signal. First portions of the detector signal are substantially dependent on the voltage of the surface being probed, while second portions of the detector signal are substantially independent of the voltage of the surface being probed. In general, the first and second portions of the detector signal include unwanted noise caused by low-level sampling due to beam leakage and/or by scintillator afterglow in the secondary-electron detector. The detector signal is sampled during the first signal portions and is sampled during the second signal portions. The sampled first signal portions are combined with the complement of the sampled second signal portions to produce a measured voltage signal representing voltage of the conductor. In a preferred sampling scheme, alternate electron-beam sampling pulses are held-off. A first gate samples the secondary-electron detector signal when sampling pulses are not held off. A second gate samples the secondary-electron detector signal when sampling pulses are held off, and these samples are inverted. The samples from the first gate are combined with the inverted samples from the second gate to substantially cancel unwanted background noise caused by beam leakage and/or scintillator afterglow after sufficient integration.