公开(公告)号：US10068747B2

公开(公告)日：2018-09-04

申请号：US15253795

申请日：2016-08-31

Applicant: Carl Zeiss SMT GmbH

Inventor： Michael Budach ,  Michael Schnell ,  Bernd Schindler ,  Markus Boese

IPC: H01J37/28 ,  H01J37/02 ,  H01J37/22 ,  G01Q30/02

CPC classification number: H01J37/28 ,  G01Q30/02 ,  H01J37/026 ,  H01J37/222 ,  H01J2237/004 ,  H01J2237/2818 ,  H01J2237/3174

Abstract: A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.

公开(公告)号：US09846133B2

公开(公告)日：2017-12-19

申请号：US14443720

申请日：2012-11-19

Applicant: Hitachi, Ltd.

Inventor： Yoshinobu Kimura ,  Natsuki Tsuno ,  Hiroya Ohta ,  Renichi Yamada ,  Toshiyuki Ohno ,  Yuki Mori

IPC: G01N23/225 ,  H01J37/28 ,  G01N23/22 ,  H01J37/22 ,  H01L21/66 ,  H01J37/285 ,  H01L21/67 ,  H01J37/147 ,  H01L29/16

CPC classification number: G01N23/225 ,  G01N23/2208 ,  H01J37/1474 ,  H01J37/22 ,  H01J37/28 ,  H01J37/285 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/221 ,  H01J2237/2806 ,  H01J2237/2817 ,  H01L21/67288 ,  H01L22/12 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

公开(公告)号：US09822443B1

公开(公告)日：2017-11-21

申请号：US15010653

申请日：2016-01-29

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  C23C14/48

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US20160365222A1

公开(公告)日：2016-12-15

申请号：US14739198

申请日：2015-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ting-Tsung CHOU

IPC: H01J37/29 ,  H01L21/68 ,  H01J37/02 ,  H01J37/21 ,  H01J37/26

CPC classification number: H01J37/265 ,  H01J37/21 ,  H01J2237/004 ,  H01J2237/216 ,  H01L22/12

Abstract: A method for processing a semiconductor wafer is provided. The method includes positioning the semiconductor wafer in a scanning electron microscope (SEM). The method further includes producing images of at least a portion of a test region that is designated on a process surface of the semiconductor wafer. The method also includes adjusting the condition of a charged particle beam of the SEM at a check point selected in the test region. In addition, the method includes producing images of another portion of the test region after the condition of the charged particle beam is adjusted.

Abstract translation: 提供了一种用于处理半导体晶片的方法。 该方法包括将半导体晶片定位在扫描电子显微镜（SEM）中。 该方法还包括产生在半导体晶片的工艺表面上指定的测试区域的至少一部分的图像。 该方法还包括在测试区域中选择的检查点处调整SEM的带电粒子束的状态。 此外，该方法包括在调整带电粒子束的状态之后产生测试区域的另一部分的图像。

公开(公告)号：US09485846B2

公开(公告)日：2016-11-01

申请号：US14575102

申请日：2014-12-18

Applicant: Hermes Microvision Inc.

Inventor： Guochong Weng ,  Youjin Wang ,  Chiyan Kuan ,  Chung-Shih Pan

IPC: G01N23/00 ,  H05F3/02 ,  H01J37/20 ,  G01N23/225 ,  H01J37/02

CPC classification number: G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/202 ,  H01J2237/2448 ,  H01J2237/2602 ,  H01J2237/2811 ,  H01J2237/2813 ,  H05F3/02

Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

Abstract translation: 提供一种用于接地极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于将EUV掩模接地的结构包括至少一个接地引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或背侧上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUV掩模上的累积充电是接地的。 通过同时使用电子束扫描连续移动台上的EUV掩模的反射表面。 舞台的移动方向垂直于电子束的扫描方向。

公开(公告)号：US09355816B2

公开(公告)日：2016-05-31

申请号：US14773233

申请日：2014-01-22

Applicant: Dai Nippon Printing Co., Ltd.

Inventor： Yohei Ookawa ,  Hidenori Ozawa

IPC: H01J37/00 ,  H01J37/304 ,  H01J37/317 ,  H01J37/20

CPC classification number: H01J37/3045 ,  H01J37/20 ,  H01J37/3174 ,  H01J2237/004 ,  H01J2237/30455

Abstract: The present invention provides a non-transitory medium storing a program for correcting an irradiation position of a charged particle beam, a correction amount calculation device, a charged particle beam irradiation system, and a method for correcting an irradiation position of a charged particle beam. The medium includes instructions for causing a control unit to perform actions including replacing charging of a resist with surface charges at an interface between the resist and a work piece, and calculating a charge density distribution of the surface charges; calculating a trajectory of a charged particle based on the charge density distribution; calculating an amount of error of the irradiation position of the charged particle beam based on the trajectory and calculating an amount of correction of the irradiation position of the charged particle beam based on the error amount.

Abstract translation: 本发明提供一种存储用于校正带电粒子束的照射位置的程序的非暂时介质，校正量计算装置，带电粒子束照射系统和用于校正带电粒子束的照射位置的方法。 所述介质包括用于使控制单元执行动作的指令，包括用抗蚀剂和工件之间的界面处的表面电荷替换抗蚀剂的充电，以及计算表面电荷的电荷密度分布; 基于电荷密度分布计算带电粒子的轨迹; 基于轨迹计算带电粒子束的照射位置的误差量，并基于误差量计算带电粒子束的照射位置的校正量。

公开(公告)号：US20150303030A1

公开(公告)日：2015-10-22

申请号：US14443720

申请日：2012-11-19

Applicant: HITACHI, LTD.

Inventor： Yoshinobu Kimura ,  Natsuki Tsuno ,  Hiroya Ohta ,  Renichi Yamada ,  Toshiyuki Ohno ,  Yuki Mori

IPC: H01J37/285 ,  H01J37/147 ,  H01L21/67 ,  H01L21/66 ,  H01L29/16

CPC classification number: G01N23/225 ,  G01N23/2208 ,  H01J37/1474 ,  H01J37/22 ,  H01J37/28 ,  H01J37/285 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/221 ,  H01J2237/2806 ,  H01J2237/2817 ,  H01L21/67288 ,  H01L22/12 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, said device being capable of applying a positive or negative voltage to the electrode and obtaining images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. First, an image (first image) is obtained using the EH and positive potential conditions. Next, an image (second image) is obtained using the EL and negative potential conditions. Next, an image (third image) is obtained at the same position as the second image, and by using the EL and positive potential conditions.

Abstract translation: 提供了一种检测装置，其高精度地检测并分类表面不匀，步进分批，穿透叶片位错，穿透螺旋位错，基面位错以及在SiC衬底和外延层中形成的堆垛缺陷; 和一个系统。 在使用带电粒子束的检查装置中，使用具有设置在样品和物镜之间的电极的装置，所述装置能够向电极施加正电压或负电压并获得图像。 测量二次电子发射速率，并发现带电粒子的能量EL和EH。 首先，使用EH和正电位条件获得图像（第一图像）。 接下来，使用EL和负电位条件获得图像（第二图像）。 接下来，在与第二图像相同的位置处获得图像（第三图像），并且通过使用EL和正电位条件。

公开(公告)号：US20150214003A1

公开(公告)日：2015-07-30

申请号：US14416848

申请日：2013-06-12

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  LIFESEM INC.

Inventor： Toshihiko Ogura

IPC: H01J37/26 ,  G01N23/225

CPC classification number: H01J37/261 ,  G01N23/225 ,  H01J37/20 ,  H01J2237/004 ,  H01J2237/2003

Abstract: In an upper main body of a sample holder, a laminate of an insulative thin film and a secondary electron emission protective thin film is provided. An electron beam emitted from an electron gun enters the secondary electron emission protective thin film side. The undersurface of the insulative thin film is a sample adhesion surface, where a sample to be an observation target is held by adsorption or the like. The secondary electron emission protective thin film is made of a material having a low secondary electron emission coefficient δ and, preferably, is non-insulative. That is, the secondary electron emission protective thin film is conductive even though the electric resistance is high. Accordingly, the charge level of a site irradiated with the electron beam has a low charge level.

Abstract translation: 在样品保持器的上主体中，设置绝缘薄膜和二次电子发射保护薄膜的叠层体。 从电子枪发射的电子束进入二次电子发射保护薄膜一侧。 绝缘性薄膜的下表面是样品粘合面，通过吸附等保持作为观察对象物的样品。 二次电子发射保护薄膜由二次电子发射系数δ低的材料制成，优选为非绝缘性。 也就是说，即使电阻高，二次电子发射保护薄膜也是导电的。 因此，用电子束照射的部位的电荷水平具有低的电荷水平。

公开(公告)号：US08968535B2

公开(公告)日：2015-03-03

申请号：US12967304

申请日：2010-12-14

Applicant: John MacNeil ,  Paul George Bennett

Inventor： John MacNeil ,  Paul George Bennett

IPC: C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  H01J27/02 ,  C23C14/34 ,  C23C14/46 ,  H01J37/24 ,  H01J37/305

CPC classification number: H01J27/022 ,  C23C14/3485 ,  C23C14/46 ,  H01J37/243 ,  H01J37/305 ,  H01J2237/004 ,  H01J2237/043 ,  H01J2237/08 ,  H01J2237/304

Abstract: This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pass power to the grid (13) to extract the ions.

Abstract translation: 本发明涉及一种用于非导电靶（14）的离子束源（10），其包括用于提取离子的栅格（13）和用于向栅格（13）提供通过电力以提取离子的电源。

公开(公告)号：US08624182B2

公开(公告)日：2014-01-07

申请号：US13195927

申请日：2011-08-02

Applicant: Kenji Watanabe ,  Masahiro Hatakeyama ,  Yoshihiko Naito ,  Tatsuya Kohama ,  Kenji Terao ,  Takeshi Murakami ,  Takehide Hayashi ,  Kiwamu Tsukamoto ,  Hiroshi Sobukawa ,  Norio Kimura

Inventor： Kenji Watanabe ,  Masahiro Hatakeyama ,  Yoshihiko Naito ,  Tatsuya Kohama ,  Kenji Terao ,  Takeshi Murakami ,  Takehide Hayashi ,  Kiwamu Tsukamoto ,  Hiroshi Sobukawa ,  Norio Kimura

IPC: H01J37/244 ,  H01J37/285 ,  H01J37/29

CPC classification number: H01J37/22 ,  H01J37/265 ,  H01J37/29 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/24495 ,  H01J2237/24564 ,  H01J2237/2817

Abstract: An electro-optical inspection apparatus prevents adhesion of dust or particles to a sample surface, wherein a stage on which a sample is placed is disposed inside a vacuum chamber that can be evacuated, and a dust collecting electrode is disposed to surround a periphery of the sample. The dust collecting electrode is applied with a voltage having the same polarity as a voltage applied to the sample and an absolute value that is the same or larger than an absolute value of the voltage. Because dust or particles adhere to the dust collecting electrode, adhesion of the dust or particles to the sample surface can be reduced. Instead of using the dust collecting electrode, it is possible to form a recess on a wall of the vacuum chamber, or to dispose on the wall a metal plate having a mesh structure to which a predetermined voltage is applied.

Abstract translation: 电光检查装置防止灰尘或颗粒附着到样品表面，其中放置样品的阶段设置在可以抽真空的真空室内，并且集尘电极被设置成围绕 样品。 集尘电极施加与施加到样品的电压极性相同的电压，绝对值等于或大于电压的绝对值。 由于灰尘或颗粒附着在集尘电极上，所以可以减少灰尘或颗粒附着到样品表面。 代替使用集尘电极，可以在真空室的壁上形成凹部，或者在壁上设置具有施加了预定电压的网状结构的金属板。