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    Calibration methods for improving uniformity in X-ray photon counting detectors
    22.
    发明授权
    Calibration methods for improving uniformity in X-ray photon counting detectors 有权

    公开(公告)号：US11344266B2

    公开(公告)日：2022-05-31

    申请号：US17019750

    申请日：2020-09-14

    Applicant: REDLEN TECHNOLOGIES, INC.

    Inventor： Krzysztof Iniewski ,  Elmaddin Guliyev ,  Conny Hansson

    IPC: A61B6/00 ,  G01N23/046

    Abstract: Various aspects include methods for use in X-ray detectors for adjusting count measurements from pixel detectors within a pixelated detector module to correct for the effects of pileup events that occur when more than one photon is absorbed in a pixel detector during a deadtime of the detector system. In various embodiments, count measurements may be obtained at two different X-ray tube currents, from which the detector system deadtime may be calculated based on the two count measurements and a ratio of the two X-ray tube currents. Using the calculated deadtime, a pileup correction factor may be determined appropriate for the behavior of the detector system in response to pileup events. The pileup correction factor may be applied to pixel detector count values after the counts have been corrected for pixel-to-pixel differences using a flat field correction.

    LOW DARK CURRENT RADIATION DETECTOR AND METHOD OF MAKING THE SAME
    23.
    发明申请
    LOW DARK CURRENT RADIATION DETECTOR AND METHOD OF MAKING THE SAME 有权

    公开(公告)号：US20220107431A1

    公开(公告)日：2022-04-07

    申请号：US17064089

    申请日：2020-10-06

    Applicant: REDLEN TECHNOLOGIES, INC.

    Inventor： Saeid TAHERION ,  Michael K. Jackson

    IPC: G01T1/24 ,  H01L27/146

    Abstract: A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.

    Compensation for charge sharing between detector pixels in a pixilated radiation detector
    24.
    发明授权
    Compensation for charge sharing between detector pixels in a pixilated radiation detector 有权

    公开(公告)号：US11246547B2

    公开(公告)日：2022-02-15

    申请号：US16931800

    申请日：2020-07-17

    Applicant: REDLEN TECHNOLOGIES, INC.

    Inventor： Krzysztof Iniewski ,  Elmaddin Guliyev ,  Conny Hansson

    IPC: A61B6/00 ,  A61B6/03

    Abstract: Various aspects include methods for compensating for the effects of charge sharing among pixelate detectors in X-ray detectors by applying a correspondence factor to counts of X-ray photons in energy bins to estimate incident X-ray photon energy bins. The correspondence factor may be determined by determining an incident X-ray photon energy spectrum, adjusting the incident X-ray photon energy spectrum to account for an energy resolution of the pixelated detector, generating a charge sharing model for the adjusted incident X-ray photon energy spectrum based on a percentage charge sharing parameter of the pixelated detector, applying the charge sharing model to energy bins of the pixelated detector to estimate counts in each of the energy bins, and determining the correspondence factor by comparing the estimated counts in each of the energy bins to counts in the energy bins that would be expected for the adjusting the incident X-ray photon energy spectrum.

    HIGH-PERFORMANCE RADIATION DETECTORS AND METHODS OF FABRICATING THEREOF
    25.
    发明申请
    HIGH-PERFORMANCE RADIATION DETECTORS AND METHODS OF FABRICATING THEREOF 有权
    高性能辐射探测器及其制作方法

    公开(公告)号：US20160240584A1

    公开(公告)日：2016-08-18

    申请号：US15014707

    申请日：2016-02-03

    Applicant: REDLEN TECHNOLOGIES, INC.

    Inventor： Uri EL-HANANY ,  Adam DENSMORE ,  Saeid TAHERION ,  Georgios PREKAS ,  Veeramani PERUMAL

    IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0224

    CPC classification number: H01L27/14696 ,  H01L27/14658 ,  H01L27/14661 ,  H01L27/14687 ,  H01L27/14698 ,  H01L31/022408 ,  H01L31/1832

    Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

    Abstract translation: 制造固态放射线检测器方法的方法包括使用多个研磨和抛光步骤对半导体晶片的第一和第二表面进行机械研磨和抛光。 该方法还包括通过在抛光的第一和第二表面的顶部上使用氧等离子体来生长钝化氧化物层，以钝化半导体晶片。 在第一钝化氧化物层的顶部沉积阳极接触并将其图案化，其位于第一表面的顶部。 单片或图案化的阴极触点沉积在位于第二表面上的第二钝化氧化物层的顶部上。 氮化铝封装层可以沉积在阳极触点上并被图案化以封装第一钝化氧化物层，同时物理地暴露每个阳极触点的中心部分以电连接阳极触点。

    DIRECT ATTACH RADIATION DETECTOR STRUCTURES INCLUDING PIXELATED SENSORS AND READ-OUT CIRCUITRY HAVING VARYING PITCH
    26.
    发明申请
    DIRECT ATTACH RADIATION DETECTOR STRUCTURES INCLUDING PIXELATED SENSORS AND READ-OUT CIRCUITRY HAVING VARYING PITCH 有权

    公开(公告)号：US20240377544A1

    公开(公告)日：2024-11-14

    申请号：US18612288

    申请日：2024-03-21

    Applicant: REDLEN TECHNOLOGIES, INC.

    Inventor： Glenn BINDLEY ,  Krzysztof INIEWSKI ,  Michael AYUKAWA

    IPC: G01T1/29 ,  G01T1/24

    Abstract: Direct attach radiation detector structures include an application specific integrated circuit (ASIC) including an array of unit cells including signal processing channel circuitry and at least one radiation sensor including an array of pixel detectors located over a front surface of the ASIC. In various embodiments, an ASIC having a fixed layout of unit cells may accommodate different radiation sensors having varying layouts of pixel detectors. In some embodiments, a redistribution layer on the front surface of the ASIC may route detection signals from pixel detectors to the corresponding unit cells. Alternatively, or in addition, a subset of the unit cells of the ASIC may be active unit cells that are electrically coupled to a pixel detector. The remaining unit cells may be inactive unit cells that may be powered down.

    RADIATION DETECTOR HAVING ASYMMETRIC CONTACTS
    28.
    发明公开
    RADIATION DETECTOR HAVING ASYMMETRIC CONTACTS 审中-公开

    公开(公告)号：US20230375729A1

    公开(公告)日：2023-11-23

    申请号：US18318987

    申请日：2023-05-17

    Applicant: REDLEN TECHNOLOGIES, INC.

    Inventor： Yuxin SONG ,  Brad AITCHISON ,  Michael Kevin JACKSON

    IPC: G01T1/24

    CPC classification number: G01T1/241 ,  G01T1/244 ,  G01T1/247

    Abstract: Radiation detectors include a radiation-sensitive semiconductor substrate and at least one asymmetric contact (i.e., a cathode electrode or anode electrode) that exhibits different blocking effect for charge carriers (i.e., holes and electrons) of opposite types. In one exemplary embodiment, a radiation detector includes a cathode electrode having a first metallic material having a work function that is ≥4.6 over a first surface of the radiation-sensitive semiconductor substrate, and at least one anode electrode including a second metallic material having a work function that is

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