公开(公告)号：US11982946B2

公开(公告)日：2024-05-14

申请号：US17628668

申请日：2020-07-06

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Nikhil Mehta ,  Maurits Van Der Schaar ,  Markus Gerardus Martinus Maria Van Kraaij ,  Hugo Augustinus Joseph Cramer ,  Olger Victor Zwier ,  Jeroen Cottaar ,  Patrick Warnaar

IPC: G03F7/20 ,  G01N21/956 ,  G03F1/84 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G01N21/956 ,  G03F1/84 ,  G03F7/70633

Abstract: A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.

公开(公告)号：US20230296533A1

公开(公告)日：2023-09-21

申请号：US18200947

申请日：2023-05-23

Applicant: ASML Netherlands B.V.

Inventor： Nitish KUMAR ,  Richard Quintanilha ,  Markus Gerardus Martinus Maria Van Kraaij ,  Konstantin Tsigutkin ,  Willem Marie Julia Marcel Coene

IPC: G01N21/956 ,  G02F1/35 ,  G03F1/84

CPC classification number: G01N21/956 ,  G02F1/353 ,  G03F1/84 ,  G01N2021/95676 ,  G01N2201/06113

Abstract: A method of inspection for defects on a substrate, such as a reflective reticle substrate, and associated apparatuses. The method includes performing the inspection using inspection radiation obtained from a high harmonic generation source and having one or more wavelengths within a wavelength range of between 20 nm and 150 nm. Also, a method including performing a coarse inspection using first inspection radiation having one or more first wavelengths within a first wavelength range; and performing a fine inspection using second inspection radiation having one or more second wavelengths within a second wavelength range, the second wavelength range comprising wavelengths shorter than the first wavelength range.

公开(公告)号：US11119414B2

公开(公告)日：2021-09-14

申请号：US16851477

申请日：2020-04-17

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Willem Maria Julia Marcel Coene ,  Frank Arnoldus Johannes Maria Driessen ,  Adrianus Cornelis Matheus Koopman ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G06F15/18 ,  G03F7/20 ,  G06N20/00 ,  G06F30/367 ,  G06N7/00

Abstract: A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.

公开(公告)号：US11067901B2

公开(公告)日：2021-07-20

申请号：US16464705

申请日：2017-11-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Scott Anderson Middlebrooks ,  Adrianus Cornelis Matheus Koopman ,  Markus Gerardus Martinus Maria Van Kraaij ,  Maxim Pisarenco

IPC: G06K9/00 ,  G03F7/20 ,  G06T7/143 ,  G06T7/149 ,  G06T7/00

Abstract: A method including: obtaining a logistic mathematical model predicting the formation of a physical structure created using a patterning process; evaluating the logistic mathematical model to predict formation of a part of the physical structure and generate an output; and adapting, based on the output, an aspect of the patterning process.

公开(公告)号：US10983445B2

公开(公告)日：2021-04-20

申请号：US16268564

申请日：2019-02-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitesh Pandey ,  Zili Zhou ,  Gerbrand Van Der Zouw ,  Arie Jeffrey Den Boef ,  Markus Gerardus Martinus Maria Van Kraaij ,  Armand Eugene Albert Koolen ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen ,  Martinus Hubertus Maria Van Weert ,  Anagnostis Tsiatmas ,  Shu-jin Wang ,  Bastiaan Onne Fagginger Auer ,  Alok Verma

IPC: G03F7/20 ,  G01N21/21 ,  G01N21/88

Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.

公开(公告)号：US10955353B2

公开(公告)日：2021-03-23

申请号：US16270155

申请日：2019-02-07

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Arno Jan Bleeker ,  Youri Johannes Laurentius Maria Van Dommelen ,  Mircea Dusa ,  Antoine Gaston Marie Kiers ,  Paul Frank Luehrmann ,  Henricus Petrus Maria Pellemans ,  Maurits Van Der Schaar ,  Cedric Desire Grouwstra ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G01B9/02 ,  G01N21/88 ,  G03F7/20 ,  G03F9/00

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

公开(公告)号：US10795269B2

公开(公告)日：2020-10-06

申请号：US16170786

申请日：2018-10-25

Applicant: ASML Netherlands B.V.

Inventor： Zili Zhou ,  Gerbrand Van Der Zouw ,  Nitesh Pandey ,  Markus Gerardus Martinus Maria Van Kraaij ,  Martinus Hubertus Maria Van Weert ,  Anagnostis Tsiatmas ,  Sergey Tarabrin ,  Hilko Dirk Bos

IPC: G01J4/00 ,  G03F7/20

Abstract: The disclosure relates to methods of determining a value of a parameter of interest of a patterning process, and of cleaning a signal containing information about the parameter of interest. In one arrangement, first and second detected representations of radiation are obtained. The radiation is provided by redirection of polarized incident radiation by a structure. The first and second detected representations are derived respectively from first and second polarization components of the redirected radiation. An asymmetry in the first detected representation comprises a contribution from the parameter of interest and a contribution from one or more other sources of asymmetry. An asymmetry in the second detected representation comprises a larger contribution from said one or more other sources of asymmetry relative to a contribution from the parameter of interest. A combination of the first and second detected representations is used to determine a value of the parameter of interest.

公开(公告)号：US10649345B2

公开(公告)日：2020-05-12

申请号：US16035961

申请日：2018-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Maxim Pisarenco ,  Markus Gerardus Martinus Maria Van Kraaij ,  Sebastianus Adrianus Goorden

IPC: G06F17/50 ,  G03F7/20 ,  G01N21/47 ,  G01N21/88 ,  G01N21/956

Abstract: Methods and apparatuses for estimation of at least one parameter of interest of a feature fabricated on a substrate, the feature having a plurality of structure parameters, the structure parameters including the at least one parameter of interest and one or more nuisance parameters. A receiver receives radiation scattered from one or more measured features on the substrate. A pupil generator generates an unprocessed pupil representation of the received radiation. A matrix multiplier multiplies a transformation matrix with intensities of each of a plurality of pixels of the unprocessed pupil representation to determine a post-processed pupil representation in which effects of the one or more nuisance parameters are mitigated or removed. A parameter estimator estimates the at least one parameter of interest based on the post-processed pupil representation.

公开(公告)号：US10126662B2

公开(公告)日：2018-11-13

申请号：US15912036

申请日：2018-03-05

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Niels Geypen ,  Hendrik Jan Hidde Smilde ,  Alexander Straaijer ,  Maurits Van Der Schaar ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

公开(公告)号：US20220026811A1

公开(公告)日：2022-01-27

申请号：US17497207

申请日：2021-10-08

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Markus Gerardus Martinus Maria Van Kraaij ,  Adrianus Cornelis Matheus Koopman ,  Stefan Hunsche ,  Willem Marie Julia Marcel Coene

IPC: G03F7/20 ,  G06T7/12 ,  G06T7/149 ,  G06T7/60

Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.