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    Photoresist treatment method by low bombardment plasma
    21.
    发明授权
    Photoresist treatment method by low bombardment plasma 有权
    光刻胶处理方法采用低轰击等离子体

    公开(公告)号：US09177824B2

    公开(公告)日：2015-11-03

    申请号：US14301847

    申请日：2014-06-11

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Banqiu Wu ,  Ajay Kumar ,  Leonid Dorf ,  Shahid Rauf ,  Kartik Ramaswamy ,  Omkaram Nalamasu

    IPC: H01L21/311 ,  H01L21/027 ,  G03F7/004 ,  G03F7/00 ,  H01J37/32

    CPC classification number: H01L21/31138 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/004 ,  H01J37/32091 ,  H01J37/3233 ,  H01J37/3266 ,  H01L21/0273

    Abstract: Methods for reducing the line width roughness on a photoresist pattern are provided herein. In some embodiments, a method of processing a patterned photoresist layer disposed atop a substrate includes flowing a process gas into a processing volume of a process chamber having the substrate disposed therein; forming a plasma within the process chamber from the process gas, wherein the plasma has a ion energy of about 1 eV to about 10 eV; and etching the patterned photoresist layer with species from the plasma to at least one of smooth a line width roughness of a sidewall of the patterned photoresist layer or remove debris.

    Abstract translation: 本文提供了减少光致抗蚀剂图案上的线宽粗糙度的方法。 在一些实施例中，处理设置在基板顶上的图案化光致抗蚀剂层的方法包括将工艺气体流入其中布置有衬底的处理室的处理容积; 在所述处理室内从所述处理气体形成等离子体，其中所述等离子体具有约1eV至约10eV的离子能; 以及将来自等离子体的物质的图案化光致抗蚀剂层蚀刻成图案化光致抗蚀剂层的侧壁的线宽粗糙度的至少一个或去除碎屑。

    Megasonic clean with cavity property monitoring
    23.
    发明授权
    Megasonic clean with cavity property monitoring 有权

    公开(公告)号：US12128456B2

    公开(公告)日：2024-10-29

    申请号：US18133972

    申请日：2023-04-12

    Applicant: Applied Materials, Inc.

    Inventor： Banqiu Wu ,  Khalid Makhamreh ,  Eliyahu Shlomo Dagan

    IPC: B08B3/12 ,  B08B13/00 ,  G01B11/30

    CPC classification number: B08B3/123 ,  B08B13/00 ,  G01B11/303

    Abstract: A method of cleaning a substrate in a megasonic cleaning chamber, comprises: flowing a cleaning fluid through a supply tube in a megasonic cleaning chamber toward a substrate; using a megasonic transducer to generate megasonic waves through the cleaning fluid and create cavities in the cleaning fluid; and using one or more sensors to determine properties of the cavities in-situ based on emissions received from the cavities. A non-transitory computer readable medium has instructions stored thereon that, when executed, causes the method to be performed.

    Atomic oxygen and ozone cleaning device having a temperature control apparatus
    24.
    发明授权
    Atomic oxygen and ozone cleaning device having a temperature control apparatus 有权

    公开(公告)号：US11964068B2

    公开(公告)日：2024-04-23

    申请号：US17200408

    申请日：2021-03-12

    Applicant: Applied Materials, Inc.

    Inventor： Banqiu Wu ,  Eli Dagan

    IPC: A61L2/20 ,  A61L2/10

    CPC classification number: A61L2/202 ,  A61L2/10 ,  A61L2202/11 ,  A61L2202/122

    Abstract: Embodiments of the present disclosure relate to an oxygen cleaning chamber with UV radiation generator temperature control and a method of atomic oxygen cleaning a substrate. The atomic oxygen cleaning chamber includes a process chamber and a cooling chamber coupled to the process chamber and a divider sealingly separating the process chamber from the cooling chamber. An ultraviolet (UV) radiation generator is disposed in the cooling chamber and provides UV radiation through the divider into the process chamber. A gas distribution assembly distributes ozone over an upper surface of a pedestal in the process chamber and a coolant distribution assembly distributes cooling gas into the cooling chamber to cool the UV radiation generator. By actively cooling the UV radiation generator, a higher intensity UV radiation at a stable wavelength is produced, i.e., without wavelength drift normally associated with high power UV radiation generator outputs.

    Atomic oxygen and ozone device for cleaning and surface treatment
    25.
    发明授权
    Atomic oxygen and ozone device for cleaning and surface treatment 有权

    公开(公告)号：US11908679B2

    公开(公告)日：2024-02-20

    申请号：US16556562

    申请日：2019-08-30

    Applicant: Applied Materials, Inc.

    Inventor： Banqiu Wu ,  Eli Dagan

    IPC: H01L21/02 ,  H01L21/67 ,  B08B7/00

    CPC classification number: H01L21/02057 ,  B08B7/00 ,  H01L21/67028 ,  H01L21/67115

    Abstract: Embodiments described herein relate to oxygen cleaning chambers and a method of atomic oxygen cleaning a substrate. The oxygen cleaning chambers and method of atomic oxygen cleaning a substrate provide for generation of atomic oxygen in situ to oxidize materials on the surfaces of the substrate. The atomic oxygen cleaning chamber includes a chamber body, a chamber lid, a processing volume defined by the chamber body and the chamber lid, an UV radiation generator including one or more UV radiation sources, a pedestal disposed in the processing volume, and a gas distribution assembly. The pedestal has a processing position corresponding to a distance from the UV radiation generator to an upper surface of the pedestal. The gas distribution assembly is configured to be connected to an ozone generator to distribute ozone over the upper surface of the pedestal.

    Intelligent processing tools
    26.
    发明授权
    Intelligent processing tools 有权

    公开(公告)号：US11209804B2

    公开(公告)日：2021-12-28

    申请号：US14538779

    申请日：2014-11-11

    Applicant: Applied Materials, Inc.

    Inventor： Banqiu Wu

    IPC: G05B19/418

    Abstract: One or more first parameters associated with an electronic device manufacturing process are monitored. An artificial neural network associated with the one or more first parameters is determined. One or more second parameters are determined using the artificial neural network. The one or more first parameters are adjusted using the one or more second parameters.

    Photomask pellicle glue residue removal
    27.
    发明授权
    Photomask pellicle glue residue removal 有权

    公开(公告)号：US10710358B2

    公开(公告)日：2020-07-14

    申请号：US16443341

    申请日：2019-06-17

    Applicant: Applied Materials, Inc.

    Inventor： Banqiu Wu ,  Eli Dagan

    IPC: H01L21/027 ,  G03F7/20 ,  B41C1/10

    Abstract: Embodiments described herein generally relate to an apparatus and methods for removing a glue residue from a photomask. The glue residue may be exposed when a pellicle is removed from the photomask. Before a new pellicle can be adhered to the photomask, the glue residue may be removed. To remove the glue residue, a laser beam may be projected through a lens and focused on a surface of the glue residue. The glue residue may be ablated from the photomask by the laser beam.

    Atomic layer deposition lithography
    30.
    发明授权
    Atomic layer deposition lithography 有权
    原子层沉积光刻

    公开(公告)号：US08932802B2

    公开(公告)日：2015-01-13

    申请号：US13762446

    申请日：2013-02-08

    Applicant: Applied Materials, Inc.

    Inventor： Banqiu Wu ,  Ajay Kumar ,  Omkaram Nalamasu

    IPC: G03F7/26 ,  G03F7/16

    CPC classification number: G03F7/16 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/167

    Abstract: Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.

    Abstract translation: 在本公开中提供了用于执行原子层沉积光刻工艺的方法和装置。 在一个实施例中，用于在器件中的材料层上形成特征的方法包括将第一反应气体混合物脉动到设置在处理室中的衬底的表面，以在衬底表面上形成材料层的第一单层， 高能辐射以处理第一单层的第一区域，以及将第二反应气体混合物脉冲至衬底表面以在第一单层的第二区域上选择性地形成第二单层。

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