公开(公告)号：US12142477B2

公开(公告)日：2024-11-12

申请号：US18134802

申请日：2023-04-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US11732356B2

公开(公告)日：2023-08-22

申请号：US16941843

申请日：2020-07-29

Applicant: Applied Materials, Inc.

Inventor： Cong Trinh ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Ning Li ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Keenan N. Woods ,  Lisa J. Enman

IPC: C23C16/455 ,  C23C16/02 ,  H01L21/56 ,  H10N70/00

CPC classification number: C23C16/45542 ,  C23C16/0209 ,  C23C16/45546 ,  C23C16/45553 ,  H01L21/56 ,  H10N70/023

Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.

公开(公告)号：US20230008986A1

公开(公告)日：2023-01-12

申请号：US17861395

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Prahallad Iyengar ,  Sanjeev Baluja ,  Kartik Shah ,  Chaowei Wang ,  Janisht Golcha ,  Eric J. Hoffmann ,  Joseph AuBuchon ,  Ashutosh Agarwal ,  Lin Sun ,  Cong Trinh

IPC: C23C16/455

Abstract: Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

公开(公告)号：US20220310909A1

公开(公告)日：2022-09-29

申请号：US17210657

申请日：2021-03-24

Applicant: Applied Materials, Inc.

Inventor： Maribel Maldonado-Garcia ,  Cong Trinh ,  Mihaela A. Balseanu

IPC: H01L45/00

Abstract: Methods of forming a stack without damaging underlying layers are discussed. The encapsulation layer and dielectric layer are highly conformal, have low etch rates, and good hermeticity. These films may be used to protect chalcogen materials in PCRAM devices or any substrates sensitive to oxygen or moisture. Some embodiments utilize a two-step process comprising a first ALD process to form an encapsulation layer and oxidation process to form a dielectric layer.

公开(公告)号：US20210265157A1

公开(公告)日：2021-08-26

申请号：US17316124

申请日：2021-05-10

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Maribel Maldonado-Garcia

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

公开(公告)号：US20210140046A1

公开(公告)日：2021-05-13

申请号：US17096341

申请日：2020-11-12

Applicant: Applied Materials, Inc.

Inventor： Keenan N. Woods ,  Cong Trinh ,  Mark Saly ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Lisa J. Enman

IPC: C23C16/455 ,  H01L21/768 ,  H01L21/02 ,  C08K5/5475 ,  C23C16/34 ,  C23C16/40

Abstract: Silyl pseudohalides having a general formula of R4−nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.

公开(公告)号：US20190309412A1

公开(公告)日：2019-10-10

申请号：US16376176

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Cong Trinh ,  Mihaela Balseanu ,  Lakmal C. Kalutarage

IPC: C23C16/40 ,  C23C16/455

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.