公开(公告)号：US10910243B2

公开(公告)日：2021-02-02

申请号：US16555764

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Dhritiman Subha Kashyap ,  Sanjeev Baluja

IPC: H01L21/67 ,  F28F3/14 ,  F28F27/02 ,  G01K13/02 ,  G01K7/02

Abstract: A thermal management system comprising a fluid channel with a plurality of parallel first flow paths extending along a first level in a first thermal mass and a plurality of parallel second flow paths extending along a second level in a second thermal mass are described. Methods for controlling the temperature of a substrate or heater surface and fluid manifolds are also described.

公开(公告)号：US20200370180A1

公开(公告)日：2020-11-26

申请号：US16876252

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Ashutosh Agarwal ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Kartik Shah ,  Yanjun Xia

IPC: C23C16/455 ,  H01J37/32

Abstract: Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.

公开(公告)号：US10325799B2

公开(公告)日：2019-06-18

申请号：US14875392

申请日：2015-10-05

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Ganesh Balasubramanian ,  Lipyeow Yap ,  Jianhua Zhou ,  Thomas Nowak

IPC: B05C13/00 ,  H01L21/68 ,  C23C16/458 ,  H01J37/32 ,  H01L21/687 ,  H01L21/324 ,  H01L21/67

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

公开(公告)号：US08753449B2

公开(公告)日：2014-06-17

申请号：US13904468

申请日：2013-05-29

Applicant: Applied Materials, Inc.

Inventor： Mahendra Chhabra ,  Scott A. Hendrickson ,  Sanjeev Baluja ,  Tsutomu Kiyohara ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos

IPC: C25C1/00 ,  C23C16/44 ,  C23C14/00 ,  B05D3/06 ,  H01L21/67 ,  G02B1/00

CPC classification number: C23C16/4405 ,  B05D3/066 ,  C23C14/00 ,  C23C16/56 ,  G02B1/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76825

Abstract: Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material.

Abstract translation: 本发明的实施例提供了在UV处理室内固化超低k电介质膜的方法。 在一个实施例中，该方法包括在沉积室中的衬底上沉积超低k电介质层，以及在UV处理室中对沉积的超低k电介质层进行UV固化过程。 该方法包括通过以约1：50000至约1:100的流量比将氧气和净化气体流入UV处理室来稳定UV处理室。 在流过氧掺杂的净化气体的同时，衬底暴露于UV辐射以固化沉积的超低k电介质层。 本发明的氧掺杂清洗固化方法提供构建超低k电介质材料的硅 - 氧网络的替代途径，从而加速交联效率而不显着影响沉积的超低k电介质材料的膜性质。

公开(公告)号：US12183618B2

公开(公告)日：2024-12-31

申请号：US17061015

申请日：2020-10-01

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Tejas Ulavi ,  Eric J. Hoffmann ,  Ashutosh Agarwal

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An actuation plate within the processing volume causes, upon movement of the support assembly, the primary lift pins to elevate through contact with the secondary lift pins.

公开(公告)号：US20240420924A1

公开(公告)日：2024-12-19

申请号：US18209716

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Amit Sahu ,  Shashidhara Patel H B ,  Muhannad Mustafa ,  Rakesh Ramadas ,  Sanjeev Baluja

IPC: H01J37/32 ,  H01L21/67

Abstract: Cooling flanges and semiconductor manufacturing processing chamber comprising the cooling flanges are disclosed. The cooling flanges comprise a flange body with a gas channel extending through the length thereof. The gas channel has an inlet funnel, a middle channel and an outlet funnel with a purge gas inlet in a side of the flange body. The purge gas inlet connects to the middle channel of the gas channel.

公开(公告)号：US11950384B2

公开(公告)日：2024-04-02

申请号：US18103812

申请日：2023-01-31

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Uday Pai ,  Timothy J. Roggenbuck ,  Sanjeev Baluja ,  Kalesh Panchaxari Karadi ,  Tejas Ulavi

IPC: H05K5/02 ,  C23C16/455 ,  C23C16/458 ,  H02G3/04

CPC classification number: H05K5/0247 ,  C23C16/45544 ,  C23C16/4588 ,  H02G3/0437 ,  C23C16/4586

Abstract: Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

公开(公告)号：US20240047256A1

公开(公告)日：2024-02-08

申请号：US17879074

申请日：2022-08-02

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: H01L21/68 ,  B25B11/00

CPC classification number: H01L21/68 ,  B25B11/005 ,  H01L21/6838

Abstract: Processing chambers, substrate supports, centering wafers and methods of center calibrating wafer hand-off are described. A centering wafer comprises a disc-shaped body having a top surface and a bottom surface defining a thickness, a center, an outer edge having an outer peripheral face, a first arc-shaped slit and a second arc-shaped slit. Embodiments of the disclosure advantageously provide the ability to use the centering wafer to monitor and control backside pressure and thereby determine the center of a substrate support prior to processing the centering wafer. The centering wafer may be centered at a plurality of different angles by rotating the centering wafer.

公开(公告)号：US11623253B2

公开(公告)日：2023-04-11

申请号：US17582100

申请日：2022-01-24

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Sanjeev Baluja ,  Wei V. Tang

IPC: B08B7/00

Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.

公开(公告)号：US20230076170A1

公开(公告)日：2023-03-09

申请号：US17466403

申请日：2021-09-03

Applicant: Applied Materials, Inc.

Inventor： Kenneth Brian Doering ,  Vivek B. Shah ,  Ashutosh Agarwal ,  Sanjeev Baluja ,  Shrihari Sampathkumar ,  Chunlei Zhang

IPC: H01L21/67 ,  H01L21/66

Abstract: Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.