公开(公告)号：US11644741B2

公开(公告)日：2023-05-09

申请号：US17229299

申请日：2021-04-13

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from carbon and antimony.

公开(公告)号：US11592738B2

公开(公告)日：2023-02-28

申请号：US17160844

申请日：2021-01-28

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy of molybdenum (Mo) and antimony (Sb).

公开(公告)号：US11537040B2

公开(公告)日：2022-12-27

申请号：US17157093

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

公开(公告)号：US11513437B2

公开(公告)日：2022-11-29

申请号：US17145592

申请日：2021-01-11

Applicant: Applied Materials, Inc.

Inventor： Shiyu Liu ,  Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).

公开(公告)号：US11365475B2

公开(公告)日：2022-06-21

申请号：US16943292

申请日：2020-07-30

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Shiyu Liu ,  Sanjay Bhat ,  Shuwei Liu ,  Wen Xiao

IPC: H01J37/32 ,  C23C14/56

Abstract: Methods of cleaning a PVD chamber component, for example, process kit components are disclosed. The method comprises at least one of directing a jet of pressurized fluid at a surface of the PVD chamber component, directing pressurized carbon dioxide at the surface of the PVD chamber component, placing the PVD chamber component in a liquid and producing ultrasonic waves in the liquid to further remove contaminants from the surface of the PVD chamber component, using a plasma to clean the surface of the PVD chamber component, subjecting the PVD chamber component to a thermal cycle by heating up to a peak temperature of at least 50° C. and subsequently cooling down to room, placing the PVD chamber component in a process chamber, reducing the pressure in the process chamber below atmospheric pressure and purging the process chamber with a gas, surface conditioning the surface of the PVD chamber component, and drying the surface of the PVD chamber component by directing a gas on the surface of the PVD chamber component.

公开(公告)号：US11327394B2

公开(公告)日：2022-05-10

申请号：US16850665

申请日：2020-04-16

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Shuwei Liu

IPC: G03F1/24 ,  G03F7/20 ,  G02B5/08

Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

公开(公告)号：US11275303B2

公开(公告)日：2022-03-15

申请号：US16877948

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from copper and hafnium.

公开(公告)号：US20210341828A1

公开(公告)日：2021-11-04

申请号：US16861788

申请日：2020-04-29

Applicant: Applied Materials, Inc.

Inventor： Shiyu Liu ,  Shuwei Liu ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/60

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.

公开(公告)号：US20210232041A1

公开(公告)日：2021-07-29

申请号：US17157093

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/54 ,  C22C27/06 ,  C22C27/02

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

公开(公告)号：US20200371423A1

公开(公告)日：2020-11-26

申请号：US16877931

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/60 ,  G21K1/06

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from iron and tellurium.