公开(公告)号：US11152479B2

公开(公告)日：2021-10-19

申请号：US16773848

申请日：2020-01-27

Applicant: Applied Materials, Inc.

Inventor： Gaurav Thareja ,  Xuebin Li ,  Abhishek Dube ,  Yi-Chiau Huang ,  Andy Lo ,  Patricia M. Liu ,  Sanjay Natarajan ,  Saurabh Chopra

IPC: H01L29/45 ,  H01L29/08 ,  H01L29/40 ,  H01L29/78 ,  H01L29/417

Abstract: The present disclosure generally relates to methods for forming a semiconductor device, a semiconductor device, and a processing chamber. The method includes forming a source/drain region in a processing system, forming a doped semiconductor layer on the source/drain region in the processing system, forming a metal silicide layer, forming a dielectric material, forming a trench in the dielectric material, and filling the trench with a conductor. The source/drain region, the doped semiconductor layer, and the metal silicide layer are formed without breaking vacuum. A semiconductor device includes a plurality of layers, and the semiconductor device has reduced contact resistance. A processing system is configured to perform the method and form the semiconductor device. Embodiments of the present disclosure enable formation of a source/drain contact with reduced contact resistance by using integrated processes, which allows various operations of the source/drain contact formation to be performed within the same processing system.

公开(公告)号：US10128110B2

公开(公告)日：2018-11-13

申请号：US15882939

申请日：2018-01-29

Applicant: Applied Materials, Inc.

Inventor： Abhishek Dube ,  Xuebin Li ,  Yi-Chiau Huang ,  Hua Chung ,  Schubert S. Chu

IPC: H01L21/02

Abstract: Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees Celsius to about 800 degrees Celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (TCS), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, wherein the silicon containing epitaxial layer is deposited at a chamber pressure of about 150 Torr or greater.

公开(公告)号：US09966438B2

公开(公告)日：2018-05-08

申请号：US15418286

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Yi-Chiau Huang ,  Hua Chung ,  Sheng-Chin Kung ,  Xuebin Li

IPC: H01L21/02 ,  H01L29/167 ,  H01L29/161 ,  H01L21/225 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205

CPC classification number: H01L29/167 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/02661 ,  H01L21/02667 ,  H01L21/2018 ,  H01L21/2033 ,  H01L21/2053 ,  H01L21/2252 ,  H01L21/26513 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67184 ,  H01L21/67207 ,  H01L29/161 ,  H01L29/785

Abstract: Implementations described herein generally relate to methods and systems for depositing layer on substrates, and more specifically, to methods for forming boron or gallium-doped germanium on silicon-containing surfaces. In one implementation, a method of processing a substrate is provided. The method comprises exposing a substrate having an exposed silicon-germanium surface and an exposed dielectric surface to a pre-treatment process, selectively depositing a boron-doped or a gallium-doped layer on the exposed silicon-germanium surface and exposing the substrate to a post-treatment process.

公开(公告)号：US09929055B2

公开(公告)日：2018-03-27

申请号：US15391623

申请日：2016-12-27

Applicant: Applied Materials, Inc.

Inventor： Abhishek Dube ,  Hua Chung ,  Jenn-Yue Wang ,  Xuebin Li ,  Yi-Chiau Huang ,  Schubert S. Chu

IPC: H01L21/20 ,  H01L21/8234 ,  H01L21/02 ,  H01L29/78 ,  H01L21/3065

CPC classification number: H01L21/823431 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L29/7848 ,  H01L29/7851

Abstract: Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375° C. to about 450° C. and a chamber pressure of about 5 Torr to about 20 Torr.

公开(公告)号：US09805942B2

公开(公告)日：2017-10-31

申请号：US15384051

申请日：2016-12-19

Applicant: Applied Materials, Inc.

Inventor： Yihwan Kim ,  Xuebin Li ,  Abhishek Dube

IPC: H01L21/308 ,  H01L21/02 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L21/3083 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/823431 ,  H01L29/0847 ,  H01L29/66795

Abstract: Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

公开(公告)号：US09704708B2

公开(公告)日：2017-07-11

申请号：US14794914

申请日：2015-07-09

Applicant: Applied Materials, Inc.

Inventor： Abhishek Dube ,  Yihwan Kim ,  Xuebin Li

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/24 ,  H01L21/3213

CPC classification number: H01L21/02579 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/32135

Abstract: A method for forming a film on a substrate is provided. The method includes positioning a substrate within a processing volume of a process chamber and heating the substrate. The method further includes forming a semiconductor film on the substrate by exposing the substrate to two or more reactants including a silicon source and a halogenated dopant source. The semiconductor film includes one or more epitaxial regions and one or more non-epitaxial regions.

公开(公告)号：US09532401B2

公开(公告)日：2016-12-27

申请号：US14181035

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Balasubramanian Ramachandran ,  Masato Ishii ,  Xuebin Li ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Paul Brillhart

IPC: F27D5/00 ,  C23C14/00 ,  H01L21/302 ,  H05B1/02

CPC classification number: H05B1/0227 ,  H05B2203/032

Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。 在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。

公开(公告)号：US09530661B2

公开(公告)日：2016-12-27

申请号：US14799387

申请日：2015-07-14

Applicant: Applied Materials, Inc.

Inventor： Yihwan Kim ,  Xuebin Li ,  Abhishek Dube

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L21/3083 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02639 ,  H01L21/823431 ,  H01L29/0847 ,  H01L29/66795

Abstract: Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.

Abstract translation: 提供了诸如FinFET的半导体器件的形成方法。 在半导体翅片上形成外延膜，外延膜包括具有两个面的顶面。 覆盖层沉积在顶表面上，并且外延膜的横向方向的部分被去除。 具有较小的横向尺寸防止外延膜与相邻的外延膜合并并在外延膜和相邻的外延膜之间产生间隙。

公开(公告)号：US20140263268A1

公开(公告)日：2014-09-18

申请号：US14181035

申请日：2014-02-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Balasubramanian Ramachandran ,  Masato Ishii ,  Xuebin Li ,  Mehmet Tugrul Samir ,  Shu-Kwan Lau ,  Paul Brillhart

IPC: H05B3/02

CPC classification number: H05B1/0227 ,  H05B2203/032

Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。 在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。