公开(公告)号：US20240002412A1

公开(公告)日：2024-01-04

申请号：US18216395

申请日：2023-06-29

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron

IPC: C07F7/22

CPC classification number: C07F7/2284 ,  C07F7/2224

Abstract: The present disclosure includes the preparation of mixed-ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for extreme ultraviolet (EUV) lithography. The compounds of the present disclosure can also be used as plasma chemical vapor deposition (CVD) precursors for EUV lithography.

公开(公告)号：US11697660B2

公开(公告)日：2023-07-11

申请号：US17585971

申请日：2022-01-27

Applicant: ENTEGRIS, INC.

Inventor： David Kuiper ,  David M. Ermert ,  Thomas Coyne

IPC: C07F7/22

CPC classification number: C07F7/2284 ,  C07F7/2296

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

公开(公告)号：US20230126125A1

公开(公告)日：2023-04-27

申请号：US17899156

申请日：2022-08-30

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Tom M. Cameron

IPC: G03F7/004 ,  G03F7/20

Abstract: The invention provides certain mixed Sn (II) amide/alkoxide precursor compounds. These compounds are useful in precursor compositions in the vapor deposition of tin-containing films such as tin oxide films onto a surface of a microelectronic device. These precursor compounds are useful in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing when paired with certain counter-reactants in a vapor deposition process. In this process, the resulting organotin polymeric surface is thus EUV-patternable insofar as when exposed to a patterned beam of EUV light, exposed portions are subjected to further reaction, thus creating regions which are chemically and physically different; this difference enables further processing and lithography of exposed regions and/or non-exposed regions and lithography in pursuit of the ultimate fabricated microelectronic device.

公开(公告)号：US20220242888A1

公开(公告)日：2022-08-04

申请号：US17585971

申请日：2022-01-27

Applicant: ENTEGRIS, INC.

Inventor： David Kuiper ,  David M. Ermert ,  Thomas Coyne

IPC: C07F7/22

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

公开(公告)号：US12297217B2

公开(公告)日：2025-05-13

申请号：US17591007

申请日：2022-02-02

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron ,  David Kuiper ,  Thomas H. Baum

IPC: C07F7/22

Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

公开(公告)号：US20250002509A1

公开(公告)日：2025-01-02

申请号：US18884024

申请日：2024-09-12

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron

IPC: C07F7/22

Abstract: The invention provides a facile process for preparing certain organotin compounds having alkyl and aryl substituents. These compounds are useful as intermediates in the synthesis of certain alkylamino- and alkoxy-substituted alkyl tin compounds, which are in turn useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

公开(公告)号：US20240343591A1

公开(公告)日：2024-10-17

申请号：US18752725

申请日：2024-06-24

Applicant: ENTEGRIS, INC.

Inventor： Scott A. Laneman ,  Thomas M. Cameron ,  Thomas H. Baum ,  David Kuiper ,  David M. Ermert ,  Johathan W. Dube

IPC: C01B33/107

CPC classification number: C01B33/107

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

公开(公告)号：US11919780B2

公开(公告)日：2024-03-05

申请号：US16923899

申请日：2020-07-08

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Robert L. Wright, Jr. ,  Thomas H. Baum ,  Bryan C. Hendrix

IPC: C01G39/04 ,  C01G41/04

CPC classification number: C01G39/04 ,  C01G41/04 ,  C01P2002/72

Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.

公开(公告)号：US20240034745A1

公开(公告)日：2024-02-01

申请号：US18373868

申请日：2023-09-27

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas H. Baum ,  Robert Wright, Jr.

IPC: C07F11/00 ,  H01L21/3205 ,  H01L21/02

CPC classification number: C07F11/00 ,  H01L21/32051 ,  H01L21/02192

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

公开(公告)号：US20230391803A1

公开(公告)日：2023-12-07

申请号：US18204210

申请日：2023-05-31

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Claudia Fafard ,  Thomas Coyne ,  Thomas M. Cameron

IPC: C07F7/22 ,  C07D307/06 ,  C07C43/04

CPC classification number: C07F7/2208 ,  C07D307/06 ,  C07C43/043 ,  C07F7/2284

Abstract: The present disclosure includes a method of obtaining an alkyltintrihalide, obtaining a solvent, and contacting the alkyltintrihalide and the solvent, thereby forming an alkyltintrihalide adduct. Also described is a composition including: an alkyltintrihalide adduct of the formula: RSnX3·(solv)n, wherein: R is a substituted C1-C5 alkyl, an unsubstituted C1-C5 alkyl, a substituted C1-C5 alkenyl, or an unsubstituted C1-C5 alkenyl; X is Cl, Br, or I; solv is a solvent; and n is at least 1.