公开(公告)号：US20210066390A1

公开(公告)日：2021-03-04

申请号：US17006459

申请日：2020-08-28

Applicant: EPISTAR CORPORATION

Inventor： Cheng-Yu CHEN ,  Hui-Chun YEH ,  Chien-Fu SHEN

IPC: H01L27/15 ,  H01L33/38

Abstract: A light-emitting device, includes: a substrate, comprising a top surface; a first edge and a second edge opposite to the first edge; a plurality of light-emitting units arranged in N rows on the substrate, wherein the N rows comprises a first row at the first edge and a Nth row at the second edge; and a plurality of connection electrodes, formed on and electrically connecting the plurality of light-emitting units; wherein the plurality of light-emitting units comprises a first light-emitting unit in the first row, and the first light-emitting unit comprises a first notch on the first edge wherein the first notch comprises a bottom composed by the top surface.

公开(公告)号：US20200303590A1

公开(公告)日：2020-09-24

申请号：US16893342

申请日：2020-06-04

Applicant: EPISTAR CORPORATION

Inventor： Tzung-Shiun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/38

Abstract: An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.

公开(公告)号：US20200020839A1

公开(公告)日：2020-01-16

申请号：US16579218

申请日：2019-09-23

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Yu-Rui LIN ,  Chen OU ,  Hsin-Ying WANG ,  Hui-Chun YEH

IPC: H01L33/62

Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.

公开(公告)号：US20200006600A1

公开(公告)日：2020-01-02

申请号：US16559117

申请日：2019-09-03

Applicant: EPISTAR CORPORATION

Inventor： Chang-Huei JING ,  Chien-Fu SHEN

IPC: H01L33/38 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00

Abstract: An optoelectronic device comprises a substrate; a groove on the substrate; a plurality of semiconductor units on the substrate and separated by the groove, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between the first semiconductor layer and the second semiconductor layer; a connecting part crossing the groove for connecting two of the plurality of semiconductor units, wherein the connecting part comprises one end on the first semiconductor layer and another end on the second semiconductor layer; a first electrode comprising a plurality of first extensions jointly connected to the one end of the connecting part; and a second electrode comprising a plurality of second extensions jointly connected to the another end of the connecting part, wherein an amount of the plurality of first extensions is different from an amount of the plurality of second extensions.

公开(公告)号：US20170207368A1

公开(公告)日：2017-07-20

申请号：US15474476

申请日：2017-03-30

Applicant: EPISTAR CORPORATION

Inventor： Hong-Che CHEN ,  Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Yu-Chen YANG ,  Jia-Kuen WANG ,  Chih-Nan LIN

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

公开(公告)号：US20170018684A1

公开(公告)日：2017-01-19

申请号：US15279149

申请日：2016-09-28

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/24 ,  H01L33/46

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.

Abstract translation: 发光元件包括基板; 在所述基板上的发光半导体堆叠，所述发光半导体堆叠包括第一半导体层，所述第一半导体层上的第二半导体层以及所述第一半导体层和所述第二半导体层之间的发光层; 在所述第一半导体层上的第一电极; 形成在所述发光半导体堆叠上的反射层; 形成在所述发光半导体堆叠上的保护层; 以及形成在所述发光半导体堆叠上的导电接触层，其中所述衬底上方的每个层包括倾斜于所述衬底的顶表面的侧表面。

公开(公告)号：US20160049442A1

公开(公告)日：2016-02-18

申请号：US14924264

申请日：2015-10-27

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUN

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/20

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit; and an electrical connection, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion is configured to cover the trench, and the joining portion is configured to cover first unit and the second unit.

Abstract translation: 1.一种发光结构，包括基板; 分别形成在所述基板上的第一单元和第二单元; 第一单元和第二单元之间的沟槽; 以及电连接，电连接所述第一单元和所述第二单元，并且包括桥接部分和从所述桥接部分延伸的接合部分，其中所述桥接部分比所述接合部分宽，并且所述桥接部分构造成覆盖所述沟槽， 并且所述接合部被构造成覆盖所述第一单元和所述第二单元。

公开(公告)号：US20230361248A1

公开(公告)日：2023-11-09

申请号：US18223898

申请日：2023-07-19

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Hui-Chun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/00 ,  H01L33/62 ,  H01L33/20 ,  H01L33/14

CPC classification number: H01L33/38 ,  H01L33/32 ,  H01L33/0075 ,  H01L33/62 ,  H01L33/20 ,  H01L33/145 ,  H01L2933/0016

Abstract: A light-emitting device, includes a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, comprising a second core region under the second pad electrode and an extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the second core region; wherein in a top view, a contour of the second pad electrode has a circular shape and a contour of the second core region has a shape which is different from the circular shape and selected from square, rectangle, rounded rectangle, rhombus, trapezoid and polygon.

公开(公告)号：US20230261148A1

公开(公告)日：2023-08-17

申请号：US18136921

申请日：2023-04-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/382 ,  H01L33/38 ,  H01L33/405

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

公开(公告)号：US20210020817A1

公开(公告)日：2021-01-21

申请号：US16985945

申请日：2020-08-05

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Yu-Rui LIN ,  Chen OU ,  Hsin-Ying WANG ,  Hui-Chun YEH

IPC: H01L33/62 ,  H01L33/20

Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.