公开(公告)号：US20230238488A1

公开(公告)日：2023-07-27

申请号：US18118488

申请日：2023-03-07

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Tsung-Hsun CHIANG ,  Bo-Jiun HU ,  Wen-Hung CHUANG ,  Yu-Ling LIN

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/0012 ,  H01L33/02

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

公开(公告)号：US20210210659A1

公开(公告)日：2021-07-08

申请号：US17206647

申请日：2021-03-19

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

公开(公告)号：US20160172560A1

公开(公告)日：2016-06-16

申请号：US14948733

申请日：2015-11-23

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Tsung-Hsun CHIANG ,  Chien-Chih LIAO ,  Wen-Hung CHUANG ,  Min-Yen TSAI ,  Bo-Jiun HU

IPC: H01L33/62 ,  H01L33/36 ,  H01L33/02

CPC classification number: H01L33/44 ,  H01L23/562 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

Abstract: A light-emitting element includes: a semiconductor light-emitting stack including a first semiconductor layer with a first conductivity, an active layer, and a second semiconductor layer with a second conductivity; a first conductive layer disposed on the semiconductor light-emitting stack and electrically connecting the second semiconductor layer; a first insulating layer on the first conductive layer; a second conductive layer disposed on the first insulating layer and electrically connecting the first semiconductor layer; a second insulating layer on the second conductive layer; a first pad and a second pad on the second conductive layer; and a cushion part disposed between the first pad and the second pad.

Abstract translation: 发光元件包括：包括具有第一导电性的第一半导体层，有源层和具有第二导电性的第二半导体层的半导体发光堆叠; 设置在所述半导体发光堆叠上并电连接所述第二半导体层的第一导电层; 在所述第一导电层上的第一绝缘层; 第二导电层，设置在所述第一绝缘层上并电连接所述第一半导体层; 在所述第二导电层上的第二绝缘层; 在第二导电层上的第一焊盘和第二焊盘; 以及设置在第一垫和第二垫之间的缓冲部。

公开(公告)号：US20210249565A1

公开(公告)日：2021-08-12

申请号：US17241958

申请日：2021-04-27

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Tsung-Hsun CHIANG ,  Chien-Chih LIAO ,  Wen-Hung CHUANG ,  Min-Yen TSAI ,  Bo-Jiun HU

IPC: H01L33/44 ,  H01L33/62 ,  H01L23/00 ,  H01L33/38 ,  H01L33/02 ,  H01L33/40

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

公开(公告)号：US20170373226A1

公开(公告)日：2017-12-28

申请号：US15633264

申请日：2017-06-26

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Wen-Hung CHUANG ,  Tzu-Yao TSENG ,  Cheng-Lin LU ,  Chi-Shiang HSU ,  Tsung-Hsun CHIANG ,  Bo-Jiun HU

IPC: H01L33/38 ,  F21K9/237 ,  F21V3/02 ,  H01L33/62 ,  H01L33/42 ,  H01L33/40 ,  F21V29/77 ,  F21V23/06 ,  F21V5/04 ,  F21K9/232 ,  H01L33/44 ,  F21Y2115/10

CPC classification number: H01L33/387 ,  F21K9/232 ,  F21K9/237 ,  F21V3/02 ,  F21V5/04 ,  F21V23/06 ,  F21V29/77 ,  F21Y2115/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to the second semiconductor layer; and a metal layer formed on the semiconductor stack, wherein the metal layer surrounds the multiple sidewalls of the second pad and the metal layer is separated from the second pad.

公开(公告)号：US20170141260A1

公开(公告)日：2017-05-18

申请号：US15350893

申请日：2016-11-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US20190245116A1

公开(公告)日：2019-08-08

申请号：US16384890

申请日：2019-04-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US20180233631A1

公开(公告)日：2018-08-16

申请号：US15948738

申请日：2018-04-09

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US20170331007A1

公开(公告)日：2017-11-16

申请号：US15669613

申请日：2017-08-04

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Tsung-Hsun CHIANG ,  Chien-Chih LIAO ,  Wen-Hung CHUANG ,  Min-Yen TSAI ,  Bo-Jiun HU

IPC: H01L33/44 ,  H01L33/40 ,  H01L33/38 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/44 ,  H01L23/562 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, an active layer, and a second semiconductor layer; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on the semiconductor light-emitting stack; wherein in a top view, the cushion part is disposed in a center region of the light-emitting element.

公开(公告)号：US20240266476A1

公开(公告)日：2024-08-08

申请号：US18638220

申请日：2024-04-17

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Tsung-Hsun CHIANG ,  Chien-Chih LIAO ,  Wen-Hung CHUANG ,  Min-Yen TSAI ,  Bo-Jiun HU

IPC: H01L33/44 ,  H01L23/00 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L23/562 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.