公开(公告)号：US10026861B2

公开(公告)日：2018-07-17

申请号：US13653051

申请日：2012-10-16

Applicant: First Solar, Inc.

Inventor： Igor Sankin ,  Markus Gloeckler ,  Benyamin Buller ,  Kieran Tracy

IPC: H01L31/065 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/073 ,  H01L21/02

Abstract: An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.

公开(公告)号：US20140186975A1

公开(公告)日：2014-07-03

申请号：US14133946

申请日：2013-12-19

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Douglas Dauson ,  David Hwang ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/66 ,  H01L31/0224 ,  G01B11/06

CPC classification number: H01L22/12 ,  G01B11/0625 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/1884 ,  H02S50/00 ,  Y02E10/50

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract translation: 提供了一种用于光电装置的多层透明导电氧化物层的光电性质和层的厚度实时的在线计算的方法和系统。 该方法和系统包括在沉积期间对堆叠的每个层进行测量。 然后测量用于实时地计算层的光电特性和厚度。

公开(公告)号：US20140174533A1

公开(公告)日：2014-06-26

申请号：US14102879

申请日：2013-12-11

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Stephen P. Murphy ,  Brian E. Cohen

IPC: H01L31/048

CPC classification number: H01L31/048 ,  H01L31/0488 ,  Y02E10/50

Abstract: A solar module with a front support, a back support, and a photovoltaic active material located between the front and back supports. An electrically insulative light transmissive seal is located at the peripheral edges of the front support and back support to electrically isolate the active material from the outer surfaces of the solar module.

Abstract translation: 具有前支撑件，后支撑件和位于前支撑件和后支撑件之间的光伏活性材料的太阳能模块。 电绝缘透光密封件位于前支撑件和后支撑件的周缘处，以将活性材料与太阳能模块的外表面电隔离。

公开(公告)号：US20130196466A1

公开(公告)日：2013-08-01

申请号：US13754613

申请日：2013-01-30

Applicant: FIRST SOLAR, INC

Inventor： Zhibo Zhao ,  Rui Shao ,  Benyamin Buller ,  Dale Roberts

IPC: H01L31/18

CPC classification number: H01L31/1884 ,  C23C14/02 ,  C23C14/024 ,  C23C14/086 ,  C23C14/568 ,  Y02E10/50

Abstract: A method and apparatus for manufacturing a multi-layered structure includes forming a crystalline layer of a material by depositing an amorphous layer of the material on a heated substrate.

Abstract translation: 用于制造多层结构的方法和装置包括通过在加热的衬底上沉积材料的非晶层来形成材料的结晶层。

公开(公告)号：US20130098433A1

公开(公告)日：2013-04-25

申请号：US13653051

申请日：2012-10-16

Applicant: First Solar, Inc.

Inventor： Igor Sankin ,  Markus Gloeckler ,  Benyamin Buller ,  Kieran Tracy

IPC: H01L31/065 ,  H01L31/18

CPC classification number: H01L31/065 ,  H01L21/02411 ,  H01L21/02422 ,  H01L21/0248 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L31/02966 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.

Abstract translation: 一种改进的光电器件及其制造方法，其包括与半导体吸收层相邻的界面层，其中界面层包括半导体层中的材料，该材料从接触吸收层的界面层的侧面减少到 接口层的相对侧。

公开(公告)号：US20200066928A1

公开(公告)日：2020-02-27

申请号：US16665516

申请日：2019-10-28

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  Zhibo Zhao

IPC: H01L31/0224 ,  H01L31/073 ,  H01L31/0749

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

公开(公告)号：US09799784B2

公开(公告)日：2017-10-24

申请号：US14209740

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.

公开(公告)号：US09406829B2

公开(公告)日：2016-08-02

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US09245808B2

公开(公告)日：2016-01-26

申请号：US14133946

申请日：2013-12-19

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Douglas Dauson ,  David Hwang ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L21/66 ,  G01B11/06 ,  H01L31/0224 ,  H01L31/18 ,  G01R31/40

CPC classification number: H01L22/12 ,  G01B11/0625 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/1884 ,  H02S50/00 ,  Y02E10/50

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract translation: 提供了一种用于光电装置的多层透明导电氧化物层的光电性质和层的厚度实时的在线计算的方法和系统。 该方法和系统包括在沉积期间对堆叠的每个层进行测量。 然后测量用于实时地计算层的光电特性和厚度。

公开(公告)号：US09236523B2

公开(公告)日：2016-01-12

申请号：US13785495

申请日：2013-03-05

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Markus Gloeckler ,  David Hwang ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/18 ,  C23C14/08 ,  C23C14/58 ,  H01L31/073 ,  H01L31/0224 ,  H01L31/0392

CPC classification number: H01L21/67109 ,  C23C14/086 ,  C23C14/5806 ,  H01L21/677 ,  H01L31/022466 ,  H01L31/0324 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

Abstract translation: 一种用于通过在氢气存在下加热非晶层来形成光伏器件的结晶镉锡酸盐层的方法和装置。