公开(公告)号：US20170133246A1

公开(公告)日：2017-05-11

申请号：US14981258

申请日：2015-12-28

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  David Hwang ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/67 ,  H01L21/677 ,  H01L31/18 ,  H01L31/032

CPC classification number: H01L21/67109 ,  C23C14/086 ,  C23C14/5806 ,  H01L21/677 ,  H01L31/022466 ,  H01L31/0324 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

公开(公告)号：US20150236173A1

公开(公告)日：2015-08-20

申请号：US14699574

申请日：2015-04-29

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Akhlesh Gupta

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0232

CPC classification number: H01L31/02963 ,  B22F3/03 ,  B22F3/15 ,  B22F7/08 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414 ,  C23C26/00 ,  C23C28/04 ,  H01L31/022466 ,  H01L31/0232 ,  H01L31/0296 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: A multilayered structure may include a doped buffer layer on a transparent conductive oxide layer.

Abstract translation: 多层结构可以包括在透明导电氧化物层上的掺杂缓冲层。

公开(公告)号：US20150004743A1

公开(公告)日：2015-01-01

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US20150000733A1

公开(公告)日：2015-01-01

申请号：US14317433

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  Zhibo Zhao

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

Abstract translation: 对于光伏器件描述了方法和装置。 光电器件包括玻璃衬底，形成在玻璃衬底上的半导体吸收层，形成在半导体吸收层上的金属背接触层，以及由MnTe，Cd1-xMnxTe和 SnTe，设置在半导体吸收层和金属背接触层之间的缓冲层。

公开(公告)号：US20140261685A1

公开(公告)日：2014-09-18

申请号：US14209094

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Feng Liao ,  Jigish Trivedi ,  Zhibo Zhao ,  Rick C. Powell ,  Long Cheng ,  Markus Gloeckler ,  Benyamin Buller ,  Igor Sankin ,  Jeremy Brewer

IPC: H01L31/0352 ,  H01L31/0203 ,  H01L31/0296

CPC classification number: H01L31/035272 ,  H01L31/0203 ,  H01L31/0296 ,  H01L31/1828 ,  Y02E10/543

Abstract: Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdSxTe1-x (where 0≦x≦1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 μm and about 14 μm and methods for forming the same.

Abstract translation: 实施例包括光伏器件，其包括至少一个吸收层，例如 CdTe和/或CdSxTe1-x（其中0＆nlE; x＆nlE; 1），其平均晶粒尺寸与厚度之比大于2至约50，平均晶粒尺寸在约4μm至约14μm之间， 相同。

公开(公告)号：US20140261667A1

公开(公告)日：2014-09-18

申请号：US14209924

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Benyamin Buller ,  Igor Sankin ,  Long Cheng ,  Jigish Trivedi ,  Jianjun Wang ,  Kieran Tracy ,  Scott Christensen ,  Gang Xiong ,  Markus Gloeckler ,  San Yu

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/046 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoNx material is provided over the ZnTe material. A Mo material may also be included in the back electrode above or below the MoNx layer and a metal layer may be also provided over the MoNx layer.

Abstract translation: 公开了一种用于PV器件的背面电极和形成方法。 在吸收材料上提供ZnTe材料，并且在ZnTe材料上提供MoNx材料。 在MoNx层上方或下方的背电极中也可以包含Mo材料，也可以在MoNx层上设置金属层。

公开(公告)号：US20130255999A1

公开(公告)日：2013-10-03

申请号：US13847821

申请日：2013-03-20

Applicant: FIRST SOLAR, INC.

Inventor： Benyamin Buller ,  Stephen P. Murphy ,  Raymond Domsic ,  Wenlai Feng

IPC: H05K7/06 ,  H01R43/00 ,  H05K1/02

CPC classification number: H05K7/06 ,  H01L31/02013 ,  H01L31/02021 ,  H01R13/5221 ,  H02S40/34 ,  Y02E10/50 ,  Y10T29/49174

Abstract: Described embodiments provide a conductor interface for a photovoltaic module that includes a raised feature on a bottom surface. Methods of forming such structures are also disclosed, as are photovoltaic modules containing the conductor interface.

Abstract translation: 描述的实施例提供了一种用于光伏模块的导体接口，其包括底表面上的凸起特征。 还公开了形成这种结构的方法，以及包含导体界面的光伏模块也是如此。

公开(公告)号：US20170288073A1

公开(公告)日：2017-10-05

申请号：US15619674

申请日：2017-06-12

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  Zhibo Zhao

IPC: H01L31/0224 ,  H01L31/073 ,  H01L31/0749

CPC classification number: H01L31/022425 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

公开(公告)号：USD739345S1

公开(公告)日：2015-09-22

申请号：US29448533

申请日：2013-03-13

Applicant: First Solar, Inc.

Designer： Benyamin Buller ,  Joshua Conley ,  Richard S. Malik, Jr. ,  Brian Maus ,  Thomas Truman

公开(公告)号：US20140261689A1

公开(公告)日：2014-09-18

申请号：US14211398

申请日：2014-03-14

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Dan Damjanovic ,  Jing Guo ,  David Hwang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022483 ,  H01L31/073 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed, the device having a zinc-containing layer, such as a ZnO1-xSx layer, as a window layer, as part of a composite window layer, and/or as a buffer layer. Use of the ZnO1-xSx layer improves an overall efficiency of the photovoltaic device due to improved optical transmission thereof as compared to CdS window layers, and due to a improved quantum efficiency of the photovoltaic device in the blue light spectrum due to the presence of the ZnO1-xSx layer.

Abstract translation: 公开了一种光电器件，该器件具有诸如ZnO1-xSx层的含锌层，作为窗口层，作为复合窗口层的一部分，和/或作为缓冲层。 与CdS窗层相比，ZnO1-xSx层的使用改善了光电器件的整体效率，并且由于光电子器件在蓝光光谱中的量子效率提高，由于存在 ZnO1-xSx层。