Abstract:
A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.
Abstract:
A method including inspecting, using an X-ray transmission image, internal defects in a TSV formed in a semiconductor wafer, and detecting the X-rays, and processing an X-ray transmission image. Therein, the detection of X-rays is configured such that: the detection azimuth of the X-rays, and the detection elevation angle of the X-rays relative to the X-ray source are determined on the basis of information on the arrangement interval, depth, and planar shape of structures formed in the sample. The angle of rotation of a rotating stage on which the sample is mounted is adjusted in accordance with the detection azimuth which has been determined, and the X-rays that have been transmitted through the sample are detected with the position of the detector set to the detection elevation angle which has been determined.
Abstract:
To detect an infinitesimal defect, highly precisely measure the dimensions of the detect, a detect inspection device is configured to comprise: a irradiation unit which irradiate light in a linear region on a surface of a sample; a detection unit which detect light from the linear region; and a signal processing unit which processes a signal obtained by detecting light and detecting a defect. The detection unit includes: an optical assembly which diffuses the light from the sample in one direction and forms an image in a direction orthogonal to the one direction; and a detection assembly having an array sensor in which detection pixels are positioned two-dimensionally, which detects the light diffused in the one direction and imaged in the direction orthogonal to the one direction, adds output signals of each of the detection pixels aligned in the direction in which the light is diffused, and outputs same.
Abstract:
A defect inspection method includes an illumination light adjustment step of adjusting light emitted from a light source, an illumination intensity distribution control step of forming light flux obtained in the illumination light adjustment step into desired illumination intensity distribution, a sample scanning step of displacing a sample in a direction substantially perpendicular to a longitudinal direction of the illumination intensity distribution, a scattered light detection step of counting the number of photons of scattered light emitted from plural small areas in an area irradiated with illumination light to produce plural scattered light detection signals corresponding to the plural small areas, a defect judgment step of processing the plural scattered light detection signals to judge presence of a defect, a defect dimension judgment step of judging dimensions of the defect in each place in which the defect is judged to be present and a display step of displaying a position on sample surface and the dimensions of the defect in each place in which the defect is judged to be present.
Abstract:
A defect inspection device inspecting a sample includes a movable table on which the sample as an inspection object and a pattern chip are mounted, an illumination light irradiation unit which irradiates a surface of the sample or a surface of the pattern chip with linearly-formed illumination light, a detection optical system section where a plurality of detection optical systems are disposed at a plurality of positions above the table and which detect images of scattered light generated from the sample, and a signal processing unit which processes detected signals to detect a defect of the sample surface, and a plurality of repeating patterns for generating the scattered light according to positions of the objective lenses of the plurality of detection optical systems of the detection optical system section when the linearly-formed illumination light is irradiated by the illumination light irradiation unit are periodically formed in the pattern chip.
Abstract:
In defect scanning carried out in a process of manufacturing a semiconductor or the like, a light detection optical system comprising a plurality of photosensors is used for detecting scattered light reflected from a sample. The photosensors used for detecting the quantity of weak background scattered light include a photon counting type photosensor having few pixels whereas the photosensors used for detecting the quantity of strong background scattered light include a photon counting type photosensor having many pixels or an analog photosensor. In addition, nonlinearity caused by the use of the photon counting type photosensor as nonlinearity of detection strength of defect scattered light is corrected in order to correct a detection signal of the defect scattered light.
Abstract:
To detect a bridge defect between lines of a line pattern formed on a sample at pitches narrower than the wavelength of inspection light, a defect inspection device is configured to comprise: a light source which emits laser; a vertical illumination unit which applies the laser to the sample from a vertical direction via an objective lens by converting the laser into linearly polarized light by using a polarization conversion unit in a state polarized in a direction orthogonal to the longitudinal direction of the line pattern; an oblique illumination unit which applies the laser to the sample from an oblique direction; a detection optical unit including an optical filter which selectively transmits a scattered light component from the defect by converting the polarization state of the reflected/scattered light; and a signal processing unit which detects the defect on the sample by processing a detection signal.
Abstract:
In defect scanning carried out in a process of manufacturing a semiconductor or the like, a light detection optical system comprising a plurality of photosensors is used for detecting scattered light reflected from a sample. The photosensors used for detecting the quantity of weak background scattered light include a photon counting type photosensor having few pixels whereas the photosensors used for detecting the quantity of strong background scattered light include a photon counting type photosensor having many pixels or an analog photosensor. In addition, nonlinearity caused by the use of the photon counting type photosensor as nonlinearity of detection strength of defect scattered light is corrected in order to correct a detection signal of the defect scattered light.
Abstract:
A defect-inspection device includes an irradiation unit having an objective-pupil-optical unit that allows illumination light linearly condensed by a first light-condensing unit to pass through, and an objective lens that allows the illumination light having passed through the objective-pupil-optical unit to pass through; an irradiation-position-control unit that controls a passing position of the illumination light in the objective-pupil-optical unit disposed at a pupil surface of the objective lens; a detection unit having a second light-condensing unit that condenses light irradiated by the irradiation unit and generated from a sample, a specular-reflection light-blocking unit that blocks specular-reflection light from the sample and light components generated near the pupil surface among the light beams condensed by the second light-condensing unit, and an image-forming unit that images the light that is condensed by the second light-condensing unit and is not blocked by the specular-reflection light-blocking unit into a detector; and a defect-determination unit that detects a defect on a surface of the sample on the basis of a signal of the image imaged by the image-forming unit.
Abstract:
The X-ray inspection device includes: an X-ray source with a focal spot size greater than the diameter of a defect for irradiating a sample with X-rays; an X-ray TDI detector arranged near the sample and having long pixels in a direction parallel to the scanning direction of the sample for detecting the X-rays emitted by the X-ray source and passing through the sample as an X-ray transmission image; and a defect-detecting unit for detecting defects based on the X-ray transmission image detected by the X-ray TDI detector.