-
21.发明申请MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK BLANK, TRANSMISSIVE MASK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 有权掩模基板，多层反射膜基板，传输掩模空白，反射掩模，传输掩模，反射掩模和半导体器件制造方法公开(公告)号：US20140329174A1
公开(公告)日：2014-11-06
申请号：US14348349
申请日：2013-03-28
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Toshihiko Orihara , Hirofumi Kozakai , Youichi Usui , Tsutomu Shoki , Junichi Horikawa
IPC: G03F1/50
CPC classification number: G03F1/22 , G03F1/50 , G03F1/60 , G03F7/2004 , H01L21/0332 , H01L21/0334
Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
Abstract translation: 公开了一种用于光刻的掩模空白基板，其中基板的主表面满足关系式（BA70-BA30）/（BD70-BD30）≥350（％/ nm），并具有最大高度（Rmax） ＆nlE; 1.2nm的轴承面积（％）和轴承深度（nm）之间的关系，通过使用原子力显微镜测量在基板侧的主表面中的1μm的面积， 形成转印图案，其中BA30被定义为30％的轴承面积，BA70被定义为70％的轴承面积，并且BD70和BD30被定义为分别表示30％的轴承面积的轴承深度和轴承 面积达70％。
-
公开(公告)号：US12135496B2
公开(公告)日：2024-11-05
申请号：US18526463
申请日：2023-12-01
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.
-
公开(公告)号：US11531264B2
公开(公告)日：2022-12-20
申请号：US17056713
申请日：2019-05-24
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
-
公开(公告)号：US11480867B2
公开(公告)日：2022-10-25
申请号：US17227655
申请日：2021-04-12
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
-
公开(公告)号：US20220146925A1
公开(公告)日：2022-05-12
申请号：US17581590
申请日：2022-01-21
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tsutomu Shoki
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
-
Patent Agency Ranking
公开(公告)号：US11048159B2
公开(公告)日：2021-06-29
申请号：US16084332
申请日：2017-03-21
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Takahiro Onoue
Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
-
公开(公告)号：US10481484B2
公开(公告)日：2019-11-19
申请号：US15829090
申请日：2017-12-01
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Takahiro Onoue , Tsutomu Shoki
Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.
-
公开(公告)号：US10025176B2
公开(公告)日：2018-07-17
申请号：US15417846
申请日：2017-01-27
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Toshihiko Orihara , Tsutomu Shoki , Junichi Horikawa
Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.
-
29.发明授权公开(公告)号：US09864267B2
公开(公告)日：2018-01-09
申请号：US15106919
申请日：2014-11-26
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Takahiro Onoue , Tsutomu Shoki
CPC classification number: G03F1/24 , C23C14/0641 , C23C14/185 , G03F1/26 , G03F1/38 , G03F1/48 , G03F7/2004
Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, the phase-shift film 16 has a tantalum-based material layer comprising tantalum, and an anti-diffusion layer 15 comprising ruthenium and oxygen is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern.
-
公开(公告)号：US09488904B2
公开(公告)日：2016-11-08
申请号：US14919994
申请日：2015-10-22
Applicant: HOYA CORPORATION
Inventor： Toshihiko Orihara , Akihiro Kawahara , Tsutomu Shoki
Abstract: Provided is a mask blank glass substrate that has high surface smoothness, that is formed with a fiducial mark capable of improving the detection accuracy of a defect position or the like, and that enables reuse or recycling of a glass substrate included therein. An underlayer is formed on a main surface, on the side where a transfer pattern is to be formed, of a glass substrate for a mask blank. The underlayer serves to reduce surface roughness of the main surface of the glass substrate or to reduce defects of the main surface of the glass substrate. A surface of the underlayer is a precision-polished surface. A fiducial mark which provides a reference for a defect position in defect information is formed on the underlayer.
-
-
-
-
-
-
-
-
-
Search Results
56
records
(took 0.024 seconds)
