公开(公告)号：US20170131629A1

公开(公告)日：2017-05-11

申请号：US15417846

申请日：2017-01-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Toshihiko ORIHARA ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/60 ,  G03F7/20 ,  G03F1/84 ,  G03F1/24 ,  G03F1/80

CPC classification number: G03F1/60 ,  G03F1/24 ,  G03F1/80 ,  G03F1/84 ,  G03F7/20 ,  G03F7/2004

Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.

公开(公告)号：US20160004153A1

公开(公告)日：2016-01-07

申请号：US14768787

申请日：2014-02-20

Applicant: HOYA CORPORATION

Inventor： Tsutomu SHOKI ,  Kazuhiro HAMAMOTO ,  Yohei IKEBE

IPC: G03F1/84 ,  G06T7/00 ,  G03F1/24 ,  C23C14/35 ,  C23C14/46

CPC classification number: G03F1/84 ,  C23C14/35 ,  C23C14/46 ,  G03F1/24 ,  G03F1/38 ,  G06T7/0004 ,  G06T2207/30148 ,  G06T2207/30204

Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.

Abstract translation: 一种制造反射掩模坯料的方法，包括形成在基板上以反射EUV光的多层反射膜; 以及形成在多层反射膜上的层叠膜。 该方法包括以下步骤：将多层反射膜沉积在衬底上以形成多层反射膜形成的衬底; 对多层反射膜形成基板进行缺陷检查; 将层叠膜沉积在多层反射膜形成基板的多层反射膜上; 形成层叠膜的上部的基准标记，从而形成包含基准标记的反射掩模坯料，基准标记作为缺陷信息中缺陷位置的基准; 并通过使用基准标记作为基准进行反射型掩模毛坯的缺陷检查。

公开(公告)号：US20190339608A1

公开(公告)日：2019-11-07

申请号：US16504151

申请日：2019-07-05

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Yohei IKEBE

IPC: G03F1/24 ,  G03F1/48 ,  C03C17/34 ,  C03C15/00 ,  G03F1/32 ,  C03C23/00 ,  C03C17/36 ,  C03C3/06

Abstract: A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm−1 is not more than 17 nm4.

公开(公告)号：US20190155141A1

公开(公告)日：2019-05-23

申请号：US16235334

申请日：2018-12-28

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Yoichi Usui

IPC: G03F1/24 ,  G03F1/38 ,  G03F7/20 ,  B32B7/02

CPC classification number: G03F1/24 ,  B32B7/02 ,  B32B2307/416 ,  B32B2551/00 ,  G03F1/38 ,  G03F7/20

Abstract: A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 μm×1 μm of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70−BA30)/(BD70−BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

公开(公告)号：US20180348628A1

公开(公告)日：2018-12-06

申请号：US16054295

申请日：2018-08-03

Applicant: HOYA CORPORATION

Inventor： Tsutomu SHOKI ,  Kazuhiro HAMAMOTO ,  Yohei IKEBE

IPC: G03F1/84 ,  G03F1/38 ,  C23C14/35 ,  G03F1/24 ,  C23C14/46 ,  G06T7/00

CPC classification number: G03F1/84 ,  C23C14/35 ,  C23C14/46 ,  G03F1/24 ,  G03F1/38 ,  G06T7/0004 ,  G06T2207/30148 ,  G06T2207/30204

Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.

公开(公告)号：US20160124298A1

公开(公告)日：2016-05-05

申请号：US14896411

申请日：2014-09-22

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Yoichi USUI

IPC: G03F1/24 ,  G03F7/20 ,  B32B7/02

CPC classification number: G03F1/24 ,  B32B7/02 ,  B32B2307/416 ,  B32B2551/00 ,  G03F1/38 ,  G03F7/20

Abstract: Provided is a conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 μm×1 μm of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70−BA30)/(BD70−BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

Abstract translation: 提供一种导电膜涂覆的基底，其上形成有导电膜。 在通过使用原子力显微镜测量导电膜的表面的1μm×1μm的区域获得的承载面积（％）和轴承深度（nm）之间的关系中，导电性表面 （BA70-BA30）/（BD70-BD30）为15以上且260以下（％/ nm），最大高度（Rmax）为1.3nm以上且15nm以下的关系。

公开(公告)号：US20160077423A1

公开(公告)日：2016-03-17

申请号：US14952772

申请日：2015-11-25

Applicant: HOYA CORPORATION

Inventor： Tsutomu SHOKI ,  Kazuhiro HAMAMOTO

IPC: G03F1/24 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/42 ,  G03F1/80

Abstract: Disclosed is a method for producing a substrate with a multilayer reflective film for EUV lithography including a multilayer reflective film disposed on a principal surface of a substrate, the method including a multilayer reflective film formation step of forming the multilayer reflective film on the principal surface of the substrate in such a manner that the multilayer reflective film has a slope region in which the film thickness is decreased in a direction from the inside to the outside of the substrate on a peripheral portion of the principal surface, and a fiducial mark formation step of forming fiducial marks in the slope region by removing at least a portion of the multilayer reflective film, the fiducial marks serving as references for a defective location indicated by defect information with respect to the surface of the substrate with the multilayer reflective film.

公开(公告)号：US20150331312A1

公开(公告)日：2015-11-19

申请号：US14655190

申请日：2013-12-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Toshihiko ORIHARA ,  Tsutomu SHOKI ,  Junichi HORIKAWA

IPC: G03F1/60 ,  G03F1/80 ,  G03F7/20 ,  G03F1/24

CPC classification number: G03F1/60 ,  G03F1/24 ,  G03F1/80 ,  G03F1/84 ,  G03F7/20 ,  G03F7/2004

Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.

Abstract translation: 本发明的目的是提供一种掩模板基板等，即使使用使用光的高灵敏度缺陷检查装置，由于减少包括伪缺陷在内的检测缺陷的数量，能够可靠地检测临界缺陷 的各种波长。 本发明涉及一种用于光刻的掩模坯料基板，其中通过测量0.14mm×0.1mm的区域得到的空间频率为1×10 -2μm-1 -1μm-1的功率谱密度 用白光干涉仪在640×480像素上形成转印图案的掩模坯料基板的主表面不大于4×106nm 4，空间频率处的功率谱密度不为 通过用原子力显微镜测量主表面上的1μm×1μm的区域获得的小于1μm的不超过10nm 4。

公开(公告)号：US20150301441A1

公开(公告)日：2015-10-22

申请号：US14418629

申请日：2013-07-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Tatsuo ASAKAWA ,  Osamu MARUYAMA ,  Tsutomu SHOKI

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜，保护膜，吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L（ML），则从基板的中心到保护膜的外周端的距离为L（Cap）， 从基板的中心到吸收膜的外周端的距离为L（Abs），并且从基板的中心到抗蚀剂膜的外周端的距离为L（Res），L （Ab）> L（Res）> L（Cap）≥L（ML），并且抗蚀剂膜的外周端位于衬底的外周端的内侧。