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公开(公告)号：US09708182B2
公开(公告)日：2017-07-18
申请号：US14838988
申请日：2015-08-28
Applicant: Infineon Technologies AG
Inventor： Andreas Behrendt , Kai-Alexander Schreiber , Sokratis Sgouridis , Martin Zgaga , Bernhard Winkler
IPC: H01L21/00 , B81C1/00 , B81B3/00 , H01L21/3063
CPC classification number: B81C1/00531 , B81B3/0021 , B81B3/0094 , B81B2203/033 , B81C1/00619 , B81C1/00626 , B81C2201/0139 , H01L21/3063
Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.
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公开(公告)号：US09598277B2
公开(公告)日：2017-03-21
申请号：US14832426
申请日：2015-08-21
Applicant: Infineon Technologies AG
Inventor： Bernhard Winkler , Andreas Zankl , Klemens Pruegl , Stefan Kolb
CPC classification number: B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C1/00246 , B81C2203/0707 , B81C2203/0714 , B81C2203/0735 , B81C2203/0771 , H01L27/0611
Abstract: Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.
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公开(公告)号：US09145292B2
公开(公告)日：2015-09-29
申请号：US14281251
申请日：2014-05-19
Applicant: Infineon Technologies AG
Inventor： Bernhard Winkler , Andreas Zankl , Klemens Pruegl , Stefan Kolb
CPC classification number: B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C1/00246 , B81C2203/0707 , B81C2203/0714 , B81C2203/0735 , B81C2203/0771 , H01L27/0611
Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.
Abstract translation: 实施例涉及MEMS器件，特别是与单个晶片上的相关电气器件集成的MEMS器件。 实施例利用模块化工艺流程概念作为MEMS首要方法的一部分，使得能够使用新颖的腔体密封过程。 因此，通过MEMS处理对电气装置的影响和潜在的有害影响被减少或消除。 同时，提供了一种高度灵活的解决方案，可以实现各种测量原理，包括电容式和压阻式。 因此，可以在提高性能和质量的同时解决各种传感器应用，同时保持成本效益。
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公开(公告)号：US20140319627A1
公开(公告)日：2014-10-30
申请号：US13872214
申请日：2013-04-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Bernhard Winkler , Horst Theuss , Mathias Vaupel
IPC: B81B7/00
CPC classification number: B81B7/0061 , B81B2201/0264 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00012
Abstract: In various embodiments, a chip package is provided. The chip package may include at least one chip having a plurality of pressure sensor regions and encapsulation material encapsulating the chip.
Abstract translation: 在各种实施例中，提供了芯片封装。 芯片封装可以包括具有多个压力传感器区域和封装芯片的封装材料的至少一个芯片。
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25.发明授权公开(公告)号：US11885705B2
公开(公告)日：2024-01-30
申请号：US17816817
申请日：2022-08-02
Applicant: Infineon Technologies AG
Inventor： Athanasios Kollias , Bernhard Winkler
IPC: G01L9/00
CPC classification number: G01L9/0073 , G01L9/0045
Abstract: Pressure sensors include stacking of sensor capacitors on top of reference capacitors. A pressure cavity may be extended below a bottom electrode. The pressure sensors may include a mechanical link of a top membrane with the bottom electrode in order to form a dual membrane, or a mechanical link of the top membrane, the bottom electrode and an intermediate electrode within a cavity. A pressure sensor includes a first and second pressure sensing portions, each including a first and second rigid electrodes, and a deflectable membrane structure. The second rigid electrode is between the first rigid electrode and the deflectable membrane structure arranged in a vertical configuration. The first and second rigid electrodes of the first and second pressure sensing portions form respective reference capacitors, and the second rigid electrodes and the deflectable membrane structures form respective sensing capacitors.
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Patent Agency Ranking
公开(公告)号：US20230054356A1
公开(公告)日：2023-02-23
申请号：US17816817
申请日：2022-08-02
Applicant: Infineon Technologies AG
Inventor： Athanasios Kollias , Bernhard Winkler
IPC: G01L9/00
Abstract: A pressure sensor includes a first pressure sensing portion and a second pressure sensing portion, each including a first rigid electrode, a second rigid electrode, and a deflectable membrane structure, wherein the second rigid electrode is between the first rigid electrode and the deflectable membrane structure, and wherein the first rigid electrode, the second rigid electrode and the deflectable membrane structure are in a vertical configuration, and wherein the first and second rigid electrode of the first pressure sensing portion form a reference capacitor, and wherein the second rigid electrode and the deflectable membrane structure of the first pressure sensing portion form a sensing capacitor, and wherein the first and second rigid electrode of the second pressure sensing portion form a reference capacitor, and wherein the second rigid electrode and the deflectable membrane structure of the second pressure sensing portion form a sensing capacitor.
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公开(公告)号：US11505450B2
公开(公告)日：2022-11-22
申请号：US17076250
申请日：2020-10-21
Applicant: Infineon Technologies AG
Inventor： Florian Brandl , Christian Geissler , Robert Gruenberger , Claus Waechter , Bernhard Winkler
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
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28.发明授权公开(公告)号：US11239375B2
公开(公告)日：2022-02-01
申请号：US16585367
申请日：2019-09-27
Applicant: Infineon Technologies AG
Inventor： Vladislav Komenko , Heiko Froehlich , Thoralf Kautzsch , Andrey Kravchenko , Bernhard Winkler
IPC: H01L29/84 , H01L21/02 , H01L21/265 , H01L21/285 , H01L21/3105 , H01L21/311 , H01L21/324 , H01L21/762 , H01L29/06
Abstract: A method for manufacturing a pressure sensitive transistor includes forming a channel region between first and second contact regions in a semiconductor substrate, forming a first isolation layer on a surface of the semiconductor substrate, forming a sacrificial structure on the first isolation layer and above the channel region, forming a semiconductor layer on the sacrificial structure and on the first isolation layer, wherein the semiconductor layer covers the sacrificial structure, removing the sacrificial structure for providing a cavity between the substrate and the semiconductor layer, wherein the semiconductor layer forms a membrane structure and forms a control electrode of the pressure sensitive transistor, forming a second isolation layer on the membrane structure and on the exposed portion of the surface of the semiconductor substrate, and forming contacting structures for the first contact region, the second contact region and the membrane structure of the pressure sensitive transistor.
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公开(公告)号：US20180127267A1
公开(公告)日：2018-05-10
申请号：US15864787
申请日：2018-01-08
Applicant: Infineon Technologies AG
Inventor： Bernhard Winkler , Rainer Leuschner , Horst Theuss
CPC classification number: B81B7/0058 , B81B2201/025 , B81B2201/0264 , B81B2207/012 , B81B2207/015 , B81C2203/0154 , G01L9/0054 , G01L15/00 , G01L19/141 , G01L19/148 , H01L29/84 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2924/1461 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (MEMS) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port.
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公开(公告)号：US09567211B2
公开(公告)日：2017-02-14
申请号：US14687835
申请日：2015-04-15
Applicant: Infineon Technologies AG
Inventor： Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
CPC classification number: B81B7/02 , B81B3/0021 , B81B3/0072 , B81B2201/0235 , B81B2201/0264 , B81C2203/0154 , G01L1/18 , G01L9/0072 , G01L19/0092 , G01L19/02
Abstract: Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
Abstract translation: 微机械半导体感测装置包括被配置为产生电感测信号的微机械感测结构和设置在微机械感测结构中的压阻感测装置，所述压阻感测装置被布置成感测扰动电感测信号的机械应力，并被配置为 基于感测到的电感测信号的机械应力产生电干扰信号。
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